STF22NM60ND
  • Share:

STMicroelectronics STF22NM60ND

Manufacturer No:
STF22NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 17A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF22NM60N is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is renowned for its low on-resistance and gate charge, making it highly suitable for demanding high-efficiency converter applications. Available in TO-220FP packaging, it offers excellent thermal management and reliability.

Key Specifications

ParameterValueUnit
Drain-Source Breakdown Voltage (VBRDSS)600V
Drain Current (continuous) at TC = 25 °C16A
Drain Current (continuous) at TC = 100 °C10A
Drain Current (pulsed)64A
Gate-Source Voltage (VGS)± 30V
On-Resistance (RDS(on))0.22 Ω (max)Ω
Operating Junction Temperature Range-55 to 150°C
Thermal Resistance Junction-Case4.17°C/W
Thermal Resistance Junction-Ambient62.5°C/W

Key Features

  • Low on-resistance and gate charge
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency converter suitability
  • Available in TO-220FP package for excellent thermal management

Applications

The STF22NM60N is ideal for various high-efficiency switching applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial power systems
  • Automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source breakdown voltage of the STF22NM60N?
    The maximum drain-source breakdown voltage is 600 V.
  2. What is the continuous drain current at 25 °C?
    The continuous drain current at 25 °C is 16 A.
  3. What is the maximum on-resistance of the STF22NM60N?
    The maximum on-resistance is 0.22 Ω.
  4. What is the operating junction temperature range?
    The operating junction temperature range is -55 to 150 °C.
  5. What are the key features of the STF22NM60N?
    The key features include low on-resistance, low gate charge, 100% avalanche testing, and low input capacitance.
  6. In which package is the STF22NM60N available?
    The STF22NM60N is available in the TO-220FP package.
  7. What are the typical applications of the STF22NM60N?
    Typical applications include power supplies, motor control, industrial power systems, and automotive systems.
  8. What is the thermal resistance junction-case for the TO-220FP package?
    The thermal resistance junction-case is 4.17 °C/W.
  9. Is the STF22NM60N suitable for high-efficiency converters?
    Yes, it is highly suitable for high-efficiency converter applications due to its low on-resistance and gate charge.
  10. What is the maximum gate-source voltage?
    The maximum gate-source voltage is ± 30 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

-
78

Please send RFQ , we will respond immediately.

Similar Products

Part Number STF22NM60ND STF28NM60ND STF23NM60ND STF26NM60ND STF25NM60ND STF21NM60ND STF22NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Not For New Designs Active Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 23A (Tc) 19.5A (Tc) 21A (Tc) 21A (Tc) 17A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 8.5A, 10V 150mOhm @ 11.5A, 10V 180mOhm @ 10A, 10V 175mOhm @ 10.5A, 10V 160mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 62.5 nC @ 10 V 70 nC @ 10 V 54.6 nC @ 10 V 80 nC @ 10 V 60 nC @ 10 V 44 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V 2090 pF @ 100 V 2050 pF @ 50 V 1817 pF @ 100 V 2400 pF @ 50 V 1800 pF @ 50 V 1300 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 30W (Tc) 35W (Tc) 35W (Tc) 35W (Tc) 40W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
BYT71-800
BYT71-800
STMicroelectronics
DIODE GEN PURP 800V 6A TO220AC
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
FDA801B-VYT
FDA801B-VYT
STMicroelectronics
IC AMP CLASS D QUAD 50W 64LQFP
TSZ124IYPT
TSZ124IYPT
STMicroelectronics
IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
TS274AIPT
TS274AIPT
STMicroelectronics
IC CMOS 4 CIRCUIT 14TSSOP
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK