STF22NM60ND
  • Share:

STMicroelectronics STF22NM60ND

Manufacturer No:
STF22NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 17A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF22NM60N is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is renowned for its low on-resistance and gate charge, making it highly suitable for demanding high-efficiency converter applications. Available in TO-220FP packaging, it offers excellent thermal management and reliability.

Key Specifications

ParameterValueUnit
Drain-Source Breakdown Voltage (VBRDSS)600V
Drain Current (continuous) at TC = 25 °C16A
Drain Current (continuous) at TC = 100 °C10A
Drain Current (pulsed)64A
Gate-Source Voltage (VGS)± 30V
On-Resistance (RDS(on))0.22 Ω (max)Ω
Operating Junction Temperature Range-55 to 150°C
Thermal Resistance Junction-Case4.17°C/W
Thermal Resistance Junction-Ambient62.5°C/W

Key Features

  • Low on-resistance and gate charge
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency converter suitability
  • Available in TO-220FP package for excellent thermal management

Applications

The STF22NM60N is ideal for various high-efficiency switching applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial power systems
  • Automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source breakdown voltage of the STF22NM60N?
    The maximum drain-source breakdown voltage is 600 V.
  2. What is the continuous drain current at 25 °C?
    The continuous drain current at 25 °C is 16 A.
  3. What is the maximum on-resistance of the STF22NM60N?
    The maximum on-resistance is 0.22 Ω.
  4. What is the operating junction temperature range?
    The operating junction temperature range is -55 to 150 °C.
  5. What are the key features of the STF22NM60N?
    The key features include low on-resistance, low gate charge, 100% avalanche testing, and low input capacitance.
  6. In which package is the STF22NM60N available?
    The STF22NM60N is available in the TO-220FP package.
  7. What are the typical applications of the STF22NM60N?
    Typical applications include power supplies, motor control, industrial power systems, and automotive systems.
  8. What is the thermal resistance junction-case for the TO-220FP package?
    The thermal resistance junction-case is 4.17 °C/W.
  9. Is the STF22NM60N suitable for high-efficiency converters?
    Yes, it is highly suitable for high-efficiency converter applications due to its low on-resistance and gate charge.
  10. What is the maximum gate-source voltage?
    The maximum gate-source voltage is ± 30 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

-
78

Please send RFQ , we will respond immediately.

Similar Products

Part Number STF22NM60ND STF28NM60ND STF23NM60ND STF26NM60ND STF25NM60ND STF21NM60ND STF22NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Not For New Designs Active Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 23A (Tc) 19.5A (Tc) 21A (Tc) 21A (Tc) 17A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 8.5A, 10V 150mOhm @ 11.5A, 10V 180mOhm @ 10A, 10V 175mOhm @ 10.5A, 10V 160mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 62.5 nC @ 10 V 70 nC @ 10 V 54.6 nC @ 10 V 80 nC @ 10 V 60 nC @ 10 V 44 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V 2090 pF @ 100 V 2050 pF @ 50 V 1817 pF @ 100 V 2400 pF @ 50 V 1800 pF @ 50 V 1300 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 30W (Tc) 35W (Tc) 35W (Tc) 35W (Tc) 40W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75

Related Product By Brand

STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
STM32F334K8T6TR
STM32F334K8T6TR
STMicroelectronics
IC MCU 32BIT 64KB FLASH 32LQFP
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
VIPER100(022Y)
VIPER100(022Y)
STMicroelectronics
IC OFFLIN CONV FLBACK 5PENTAWATT
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA