STF26NM60ND
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STMicroelectronics STF26NM60ND

Manufacturer No:
STF26NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 21A TO220FP
Delivery:
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Product Introduction

Overview

The STF26NM60ND is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is renowned for its exceptional performance, particularly in high-efficiency converters. The STF26NM60ND features a vertical structure combined with a strip layout, resulting in one of the world’s lowest on-resistance and gate charge values. This makes it highly suitable for demanding switching applications.

Key Specifications

Parameter Value Unit
Order Code STF26NM60ND
VDS (Drain-source voltage) 600 V
VGS (Gate-source voltage) ±30 V
ID (Continuous drain current at TC = 25 °C) 20 A
ID (Continuous drain current at TC = 100 °C) 12.6 A
IDM (Pulsed drain current) 80 A
RDS(on) max (Static drain-source on-resistance) 0.165 Ω
PTOT (Total dissipation at TC = 25 °C) 35 W
Tj (Operating junction temperature range) -55 to 150 °C
Rthj-case (Thermal resistance junction-case) 3.6 °C/W
Rthj-amb (Thermal resistance junction-ambient) 62.5 °C/W

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities
  • Intrinsic fast-recovery body diode
  • Utilizes MDmesh™ II technology for low on-resistance and superior switching performance

Applications

  • Switching applications
  • High-efficiency converters
  • Bridge topologies
  • ZVS phase-shift converters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF26NM60ND?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance (RDS(on)) of the STF26NM60ND?

    The typical on-resistance (RDS(on)) is 0.135 Ω.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 20 A.

  4. What is the thermal resistance junction-case (Rthj-case) of the STF26NM60ND?

    The thermal resistance junction-case (Rthj-case) is 3.6 °C/W.

  5. What are the key features of the STF26NM60ND?

    The key features include 100% avalanche testing, low input capacitance and gate charge, low gate input resistance, and high dv/dt and avalanche capabilities.

  6. What applications is the STF26NM60ND suitable for?

    The STF26NM60ND is suitable for switching applications, high-efficiency converters, bridge topologies, and ZVS phase-shift converters.

  7. What is the operating junction temperature range of the STF26NM60ND?

    The operating junction temperature range is -55 to 150 °C.

  8. What is the package type of the STF26NM60ND?

    The STF26NM60ND is available in the TO-220FP package.

  9. What is the maximum single pulse avalanche energy (EAS) of the STF26NM60ND?

    The maximum single pulse avalanche energy (EAS) is 610 mJ.

  10. What is the reverse recovery time (trr) of the STF26NM60ND?

    The reverse recovery time (trr) is approximately 370 ns at 25 °C and 450 ns at 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54.6 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1817 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF26NM60ND STF28NM60ND STF21NM60ND STF22NM60ND STF23NM60ND STF25NM60ND STF26NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Not For New Designs Obsolete Obsolete Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 23A (Tc) 17A (Tc) 17A (Tc) 19.5A (Tc) 21A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 10.5A, 10V 150mOhm @ 11.5A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8.5A, 10V 180mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54.6 nC @ 10 V 62.5 nC @ 10 V 60 nC @ 10 V 60 nC @ 10 V 70 nC @ 10 V 80 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1817 pF @ 100 V 2090 pF @ 100 V 1800 pF @ 50 V 1800 pF @ 50 V 2050 pF @ 50 V 2400 pF @ 50 V 1800 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 35W (Tc) 35W (Tc) 30W (Tc) 30W (Tc) 35W (Tc) 40W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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