Overview
The STF26NM60ND is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is renowned for its exceptional performance, particularly in high-efficiency converters. The STF26NM60ND features a vertical structure combined with a strip layout, resulting in one of the world’s lowest on-resistance and gate charge values. This makes it highly suitable for demanding switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STF26NM60ND | |
| VDS (Drain-source voltage) | 600 | V |
| VGS (Gate-source voltage) | ±30 | V |
| ID (Continuous drain current at TC = 25 °C) | 20 | A |
| ID (Continuous drain current at TC = 100 °C) | 12.6 | A |
| IDM (Pulsed drain current) | 80 | A |
| RDS(on) max (Static drain-source on-resistance) | 0.165 | Ω |
| PTOT (Total dissipation at TC = 25 °C) | 35 | W |
| Tj (Operating junction temperature range) | -55 to 150 | °C |
| Rthj-case (Thermal resistance junction-case) | 3.6 | °C/W |
| Rthj-amb (Thermal resistance junction-ambient) | 62.5 | °C/W |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
- Intrinsic fast-recovery body diode
- Utilizes MDmesh™ II technology for low on-resistance and superior switching performance
Applications
- Switching applications
- High-efficiency converters
- Bridge topologies
- ZVS phase-shift converters
Q & A
- What is the maximum drain-source voltage (VDS) of the STF26NM60ND?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STF26NM60ND?
The typical on-resistance (RDS(on)) is 0.135 Ω.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 20 A.
- What is the thermal resistance junction-case (Rthj-case) of the STF26NM60ND?
The thermal resistance junction-case (Rthj-case) is 3.6 °C/W.
- What are the key features of the STF26NM60ND?
The key features include 100% avalanche testing, low input capacitance and gate charge, low gate input resistance, and high dv/dt and avalanche capabilities.
- What applications is the STF26NM60ND suitable for?
The STF26NM60ND is suitable for switching applications, high-efficiency converters, bridge topologies, and ZVS phase-shift converters.
- What is the operating junction temperature range of the STF26NM60ND?
The operating junction temperature range is -55 to 150 °C.
- What is the package type of the STF26NM60ND?
The STF26NM60ND is available in the TO-220FP package.
- What is the maximum single pulse avalanche energy (EAS) of the STF26NM60ND?
The maximum single pulse avalanche energy (EAS) is 610 mJ.
- What is the reverse recovery time (trr) of the STF26NM60ND?
The reverse recovery time (trr) is approximately 370 ns at 25 °C and 450 ns at 150 °C.
