STF26NM60N
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STMicroelectronics STF26NM60N

Manufacturer No:
STF26NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 20A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF26NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is renowned for its low on-resistance and gate charge, making it highly suitable for high-efficiency converters. The STF26NM60N is packaged in a TO-220FP package and is designed for demanding switching applications.

Key Specifications

Parameter Value Unit
Order Code STF26NM60N
VDS (Drain-Source Voltage) 600 V
VGS (Gate-Source Voltage) ±30 V
ID (Drain Current, continuous at TC = 25 °C) 20 A
ID (Drain Current, continuous at TC = 100 °C) 12.6 A
IDM (Drain Current, pulsed) 80 A
PTOT (Total Dissipation at TC = 25 °C) 35 W
RDS(on) (Static Drain-Source On-Resistance) 0.135 (typ.), 0.165 (max.) Ω
Tj (Operating Junction Temperature Range) -55 to 150 °C
Rthj-case (Thermal Resistance Junction-Case) 3.6 °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 62.5 °C/W

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Vertical structure combined with strip layout for low on-resistance and gate charge
  • Suitable for high-efficiency converters
  • Fast-recovery body diode
  • Extremely high dv/dt ruggedness

Applications

The STF26NM60N is primarily used in switching applications, including but not limited to:

  • High-efficiency power converters
  • Power supplies
  • Motor control systems
  • Industrial power systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF26NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 20 A.

  3. What is the typical static drain-source on-resistance (RDS(on))?

    The typical static drain-source on-resistance (RDS(on)) is 0.135 Ω.

  4. What is the maximum gate-source voltage (VGS)?

    The maximum gate-source voltage (VGS) is ±30 V.

  5. What is the operating junction temperature range (Tj)?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  6. What are the key features of the STF26NM60N?

    The key features include 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance.

  7. In what package is the STF26NM60N available?

    The STF26NM60N is available in a TO-220FP package.

  8. What are the typical applications of the STF26NM60N?

    The typical applications include high-efficiency power converters, power supplies, motor control systems, and industrial power systems.

  9. What is the thermal resistance junction-case (Rthj-case) of the STF26NM60N?

    The thermal resistance junction-case (Rthj-case) is 3.6 °C/W.

  10. What is the maximum total dissipation (PTOT) at 25 °C?

    The maximum total dissipation (PTOT) at 25 °C is 35 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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STF26NM60N
STF26NM60N
MOSFET N-CH 600V 20A TO220FP

Similar Products

Part Number STF26NM60N STF26NM60ND STF6NM60N STF21NM60N STF22NM60N STF23NM60N STF24NM60N STF25NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 21A (Tc) 4.6A (Tc) 17A (Tc) 16A (Tc) 19A (Tc) 17A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 10A, 10V 175mOhm @ 10.5A, 10V 920mOhm @ 2.3A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V 180mOhm @ 9.5A, 10V 190mOhm @ 8A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 54.6 nC @ 10 V 13 nC @ 10 V 66 nC @ 10 V 44 nC @ 10 V 60 nC @ 10 V 46 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±30V ±25V ±25V ±25V ±30V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V 1817 pF @ 100 V 420 pF @ 50 V 1900 pF @ 50 V 1300 pF @ 50 V 2050 pF @ 50 V 1400 pF @ 50 V 2400 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 35W (Tc) 35W (Tc) 20W (Tc) 30W (Tc) 30W (Tc) 35W (Tc) 30W (Tc) 40W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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