STF26NM60N
  • Share:

STMicroelectronics STF26NM60N

Manufacturer No:
STF26NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 20A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF26NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is renowned for its low on-resistance and gate charge, making it highly suitable for high-efficiency converters. The STF26NM60N is packaged in a TO-220FP package and is designed for demanding switching applications.

Key Specifications

Parameter Value Unit
Order Code STF26NM60N
VDS (Drain-Source Voltage) 600 V
VGS (Gate-Source Voltage) ±30 V
ID (Drain Current, continuous at TC = 25 °C) 20 A
ID (Drain Current, continuous at TC = 100 °C) 12.6 A
IDM (Drain Current, pulsed) 80 A
PTOT (Total Dissipation at TC = 25 °C) 35 W
RDS(on) (Static Drain-Source On-Resistance) 0.135 (typ.), 0.165 (max.) Ω
Tj (Operating Junction Temperature Range) -55 to 150 °C
Rthj-case (Thermal Resistance Junction-Case) 3.6 °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 62.5 °C/W

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Vertical structure combined with strip layout for low on-resistance and gate charge
  • Suitable for high-efficiency converters
  • Fast-recovery body diode
  • Extremely high dv/dt ruggedness

Applications

The STF26NM60N is primarily used in switching applications, including but not limited to:

  • High-efficiency power converters
  • Power supplies
  • Motor control systems
  • Industrial power systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF26NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 20 A.

  3. What is the typical static drain-source on-resistance (RDS(on))?

    The typical static drain-source on-resistance (RDS(on)) is 0.135 Ω.

  4. What is the maximum gate-source voltage (VGS)?

    The maximum gate-source voltage (VGS) is ±30 V.

  5. What is the operating junction temperature range (Tj)?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  6. What are the key features of the STF26NM60N?

    The key features include 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance.

  7. In what package is the STF26NM60N available?

    The STF26NM60N is available in a TO-220FP package.

  8. What are the typical applications of the STF26NM60N?

    The typical applications include high-efficiency power converters, power supplies, motor control systems, and industrial power systems.

  9. What is the thermal resistance junction-case (Rthj-case) of the STF26NM60N?

    The thermal resistance junction-case (Rthj-case) is 3.6 °C/W.

  10. What is the maximum total dissipation (PTOT) at 25 °C?

    The maximum total dissipation (PTOT) at 25 °C is 35 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$7.58
38

Please send RFQ , we will respond immediately.

Same Series
STP26NM60N
STP26NM60N
MOSFET N-CH 600V 20A TO220AB
STB26NM60N
STB26NM60N
MOSFET N-CH 600V 20A D2PAK

Similar Products

Part Number STF26NM60N STF26NM60ND STF6NM60N STF21NM60N STF22NM60N STF23NM60N STF24NM60N STF25NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 21A (Tc) 4.6A (Tc) 17A (Tc) 16A (Tc) 19A (Tc) 17A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 10A, 10V 175mOhm @ 10.5A, 10V 920mOhm @ 2.3A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V 180mOhm @ 9.5A, 10V 190mOhm @ 8A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 54.6 nC @ 10 V 13 nC @ 10 V 66 nC @ 10 V 44 nC @ 10 V 60 nC @ 10 V 46 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±30V ±25V ±25V ±25V ±30V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V 1817 pF @ 100 V 420 pF @ 50 V 1900 pF @ 50 V 1300 pF @ 50 V 2050 pF @ 50 V 1400 pF @ 50 V 2400 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 35W (Tc) 35W (Tc) 20W (Tc) 30W (Tc) 30W (Tc) 35W (Tc) 30W (Tc) 40W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
BD140-16
BD140-16
STMicroelectronics
TRANS PNP 80V 1.5A SOT32
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
STM32L071RZT6
STM32L071RZT6
STMicroelectronics
IC MCU 32BIT 192KB FLASH 64LQFP
STM32F205RBT6TR
STM32F205RBT6TR
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64LQFP
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN