Overview
The STB26NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is known for its high efficiency and is suitable for the most demanding converter applications. It is available in D²PAK and TO-220 packages, offering a balance between high performance and compact design.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Continuous drain current (ID) at TC = 25 °C | 20 | A |
| Continuous drain current (ID) at TC = 100 °C | 12.6 | A |
| Pulsed drain current (IDM) | 80 | A |
| Total dissipation at TC = 25 °C (PTOT) | 140 | W |
| Thermal resistance junction-case (Rthj-case) | 0.89 | °C/W |
| Thermal resistance junction-ambient (Rthj-amb) | 62.5 | °C/W |
| Static drain-source on-resistance (RDS(on)) | 0.135 (typ.), 0.165 (max.) | Ω |
| Gate threshold voltage (VGS(th)) | 2-4 | V |
| Total gate charge (Qg) | 60 | nC |
Key Features
- Low input capacitance and gate charge, enhancing switching efficiency.
- Low gate input resistance, reducing switching losses.
- 100% avalanche tested, ensuring robustness under high stress conditions.
- High drain-source breakdown voltage (VDS) of 600 V, suitable for high-voltage applications.
- Compact D²PAK and TO-220 packages, offering flexibility in design.
- ECOPACK® compliant, meeting environmental standards.
Applications
- Switching applications, including power supplies, DC-DC converters, and motor control systems.
- High-efficiency converters requiring low on-resistance and gate charge.
- Industrial and automotive systems where high reliability and performance are critical.
Q & A
- What is the maximum drain-source voltage (VDS) of the STB26NM60N?
The maximum drain-source voltage (VDS) is 600 V.
- What are the typical and maximum values of the static drain-source on-resistance (RDS(on))?
The typical value is 0.135 Ω, and the maximum value is 0.165 Ω.
- What is the continuous drain current (ID) at TC = 25 °C and TC = 100 °C?
The continuous drain current (ID) is 20 A at TC = 25 °C and 12.6 A at TC = 100 °C.
- What is the thermal resistance junction-case (Rthj-case) for the D²PAK package?
The thermal resistance junction-case (Rthj-case) is 0.89 °C/W.
- What are the key features of the MDmesh™ II technology used in the STB26NM60N?
The key features include low input capacitance, low gate charge, and low gate input resistance, making it suitable for high-efficiency converters.
- In what packages is the STB26NM60N available?
The STB26NM60N is available in D²PAK and TO-220 packages.
- What is the gate threshold voltage (VGS(th)) range for the STB26NM60N?
The gate threshold voltage (VGS(th)) range is 2-4 V.
- What is the total gate charge (Qg) for the STB26NM60N?
The total gate charge (Qg) is 60 nC.
- Is the STB26NM60N environmentally compliant?
Yes, it is ECOPACK® compliant, meeting environmental standards.
- What are some typical applications for the STB26NM60N?
Typical applications include switching applications, high-efficiency converters, and industrial and automotive systems.
