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STB24NM60N
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STMicroelectronics STB24NM60N

Manufacturer No:
STB24NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 17A D2PAK
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The STB24NM60N is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device leverages the advanced MDmesh™ II technology, combining a vertical structure with a strip layout to achieve one of the world's lowest on-resistance and gate charge. This makes it an ideal choice for applications requiring high efficiency and reliability.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (On-Resistance)0.168 Ω
ID (Drain Current)17 A
Package3-Pin D2PAK
TechnologyMDmesh™ II

Key Features

  • Low on-resistance (RDS(on)) of 0.168 Ω, enhancing efficiency and reducing power losses.
  • High drain-source voltage (VDS) of 600 V, suitable for high-voltage applications.
  • Enhanced trench gate structure using ST's STripFET F8 technology.
  • 100% avalanche tested and Zener-protected for robust reliability.
  • Ideal for flyback converters and LED lighting applications due to its high performance and efficiency.

Applications

The STB24NM60N is particularly suited for a variety of high-voltage applications, including:

  • Flyback converters: Due to its high efficiency and robustness, it is ideal for use in flyback converter designs.
  • LED lighting: The device's low on-resistance and high current capability make it suitable for LED lighting systems.
  • Power supplies: It can be used in various power supply designs where high voltage and current handling are required.

Q & A

  1. What is the maximum drain-source voltage of the STB24NM60N?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the on-resistance (RDS(on)) of the STB24NM60N?
    The on-resistance (RDS(on)) is 0.168 Ω.
  3. What is the maximum drain current (ID) of the STB24NM60N?
    The maximum drain current (ID) is 17 A.
  4. What package type is the STB24NM60N available in?
    The STB24NM60N is available in a 3-Pin D2PAK package.
  5. What technology is used in the STB24NM60N?
    The STB24NM60N uses the MDmesh™ II technology.
  6. Is the STB24NM60N suitable for flyback converters?
    Yes, it is highly suitable for flyback converters due to its high efficiency and robustness.
  7. Is the STB24NM60N Zener-protected and avalanche tested?
    Yes, it is 100% avalanche tested and Zener-protected.
  8. What are some common applications of the STB24NM60N?
  9. What is the significance of the STripFET F8 technology in the STB24NM60N?
    The STripFET F8 technology enhances the trench gate structure, contributing to the device's high performance and efficiency.
  10. Where can I find detailed specifications for the STB24NM60N?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Mouser and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Part Number STB24NM60N STB26NM60N STB34NM60N STB25NM60N STB24NM65N STB21NM60N STB22NM60N STB23NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 650 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 20A (Tc) 29A (Tc) 21A (Tc) 19A (Tc) 17A (Tc) 16A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 8A, 10V 165mOhm @ 10A, 10V 105mOhm @ 14.5A, 10V 160mOhm @ 10.5A, 10V 190mOhm @ 9.5A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V 180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 100µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 60 nC @ 10 V 84 nC @ 10 V 84 nC @ 10 V 70 nC @ 10 V 66 nC @ 10 V 44 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±30V ±30V ±25V ±25V ±25V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 50 V 1800 pF @ 50 V 2722 pF @ 100 V 2400 pF @ 50 V 2500 pF @ 50 V 1900 pF @ 50 V 1300 pF @ 50 V 2050 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 125W (Tc) 140W (Tc) 250W (Tc) 160W (Tc) 160W (Tc) 140W (Tc) 125W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK D2PAK D2PAK D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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