Overview
The STB24NM60N is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device leverages the advanced MDmesh™ II technology, combining a vertical structure with a strip layout to achieve one of the world's lowest on-resistance and gate charge. This makes it an ideal choice for applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 600 V |
| RDS(on) (On-Resistance) | 0.168 Ω |
| ID (Drain Current) | 17 A |
| Package | 3-Pin D2PAK |
| Technology | MDmesh™ II |
Key Features
- Low on-resistance (RDS(on)) of 0.168 Ω, enhancing efficiency and reducing power losses.
- High drain-source voltage (VDS) of 600 V, suitable for high-voltage applications.
- Enhanced trench gate structure using ST's STripFET F8 technology.
- 100% avalanche tested and Zener-protected for robust reliability.
- Ideal for flyback converters and LED lighting applications due to its high performance and efficiency.
Applications
The STB24NM60N is particularly suited for a variety of high-voltage applications, including:
- Flyback converters: Due to its high efficiency and robustness, it is ideal for use in flyback converter designs.
- LED lighting: The device's low on-resistance and high current capability make it suitable for LED lighting systems.
- Power supplies: It can be used in various power supply designs where high voltage and current handling are required.
Q & A
- What is the maximum drain-source voltage of the STB24NM60N?
The maximum drain-source voltage (VDS) is 600 V. - What is the on-resistance (RDS(on)) of the STB24NM60N?
The on-resistance (RDS(on)) is 0.168 Ω. - What is the maximum drain current (ID) of the STB24NM60N?
The maximum drain current (ID) is 17 A. - What package type is the STB24NM60N available in?
The STB24NM60N is available in a 3-Pin D2PAK package. - What technology is used in the STB24NM60N?
The STB24NM60N uses the MDmesh™ II technology. - Is the STB24NM60N suitable for flyback converters?
Yes, it is highly suitable for flyback converters due to its high efficiency and robustness. - Is the STB24NM60N Zener-protected and avalanche tested?
Yes, it is 100% avalanche tested and Zener-protected. - What are some common applications of the STB24NM60N?
- What is the significance of the STripFET F8 technology in the STB24NM60N?
The STripFET F8 technology enhances the trench gate structure, contributing to the device's high performance and efficiency. - Where can I find detailed specifications for the STB24NM60N?
Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Mouser and RS Components.
