STMicroelectronics STB24NM60N

Manufacturer No:: STB24NM60N
Manufacturer:: STMicroelectronics
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 600V 17A D2PAK
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Product Introduction

Overview

The STB24NM60N is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device leverages the advanced MDmesh™ II technology, combining a vertical structure with a strip layout to achieve one of the world's lowest on-resistance and gate charge. This makes it an ideal choice for applications requiring high efficiency and reliability.

Key Specifications

Parameter	Value
V_DS (Drain-Source Voltage)	600 V
R_DS(on) (On-Resistance)	0.168 Ω
I_D (Drain Current)	17 A
Package	3-Pin D2PAK
Technology	MDmesh™ II

Key Features

Low on-resistance (R_DS(on)) of 0.168 Ω, enhancing efficiency and reducing power losses.
High drain-source voltage (V_DS) of 600 V, suitable for high-voltage applications.
Enhanced trench gate structure using ST's STripFET F8 technology.
100% avalanche tested and Zener-protected for robust reliability.
Ideal for flyback converters and LED lighting applications due to its high performance and efficiency.

Applications

The STB24NM60N is particularly suited for a variety of high-voltage applications, including:

Flyback converters: Due to its high efficiency and robustness, it is ideal for use in flyback converter designs.
LED lighting: The device's low on-resistance and high current capability make it suitable for LED lighting systems.
Power supplies: It can be used in various power supply designs where high voltage and current handling are required.

Q & A

What is the maximum drain-source voltage of the STB24NM60N?
The maximum drain-source voltage (V_DS) is 600 V.
What is the on-resistance (R_DS(on)) of the STB24NM60N?
The on-resistance (R_DS(on)) is 0.168 Ω.
What is the maximum drain current (I_D) of the STB24NM60N?
The maximum drain current (I_D) is 17 A.
What package type is the STB24NM60N available in?
The STB24NM60N is available in a 3-Pin D2PAK package.
What technology is used in the STB24NM60N?
The STB24NM60N uses the MDmesh™ II technology.
Is the STB24NM60N suitable for flyback converters?
Yes, it is highly suitable for flyback converters due to its high efficiency and robustness.
Is the STB24NM60N Zener-protected and avalanche tested?
Yes, it is 100% avalanche tested and Zener-protected.
What are some common applications of the STB24NM60N?
What is the significance of the STripFET F8 technology in the STB24NM60N?
The STripFET F8 technology enhances the trench gate structure, contributing to the device's high performance and efficiency.
Where can I find detailed specifications for the STB24NM60N?
Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Mouser and RS Components.

In Stock

UnitPrice: $6.85

Quantity: 40

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Part Number	STB24NM60N	STB26NM60N	STB34NM60N	STB25NM60N	STB24NM65N	STB21NM60N	STB22NM60N	STB23NM60N
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Status	Active	Active	Active	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	600 V	600 V	600 V	650 V	600 V	600 V	600 V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)	20A (Tc)	29A (Tc)	21A (Tc)	19A (Tc)	17A (Tc)	16A (Tc)	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 8A, 10V	165mOhm @ 10A, 10V	105mOhm @ 14.5A, 10V	160mOhm @ 10.5A, 10V	190mOhm @ 9.5A, 10V	220mOhm @ 8.5A, 10V	220mOhm @ 8A, 10V	180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 100µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V	60 nC @ 10 V	84 nC @ 10 V	84 nC @ 10 V	70 nC @ 10 V	66 nC @ 10 V	44 nC @ 10 V	60 nC @ 10 V
Vgs (Max)	±30V	±30V	±25V	±25V	±25V	±25V	±30V	±25V
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 50 V	1800 pF @ 50 V	2722 pF @ 100 V	2400 pF @ 50 V	2500 pF @ 50 V	1900 pF @ 50 V	1300 pF @ 50 V	2050 pF @ 50 V
FET Feature	-	-	-	-	-	-	-	-
Power Dissipation (Max)	125W (Tc)	140W (Tc)	250W (Tc)	160W (Tc)	160W (Tc)	140W (Tc)	125W (Tc)	150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	D²PAK (TO-263)	D²PAK (TO-263)	D²PAK (TO-263)	D2PAK	D2PAK	D2PAK	D²PAK (TO-263)	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	190mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	46 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1400 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	125W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STMicroelectronics STB24NM60N

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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