STP26NM60N
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STMicroelectronics STP26NM60N

Manufacturer No:
STP26NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 20A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP26NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is designed to offer high efficiency and low on-resistance, making it suitable for demanding applications such as high-efficiency converters. Available in various packages including D²PAK, I²PAK, TO-220, TO-220FP, and TO-247, it caters to a wide range of design requirements.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25 °C20A
Single Pulse Avalanche Current (IAS)6A
Single Pulse Avalanche Energy (EAS)610mJ
Drain-Source Breakdown Voltage (V(BR)DSS)600V
Gate Threshold Voltage (VGS(th))2 - 4V
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 10 A0.135 - 0.165Ω
Gate-Body Leakage Current (IGSS)±0.1µA

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency due to low on-resistance and gate charge
  • Suitable for high-efficiency converters
  • Available in multiple packages: D²PAK, I²PAK, TO-220, TO-220FP, and TO-247

Applications

The STP26NM60N is particularly suited for switching applications, including high-efficiency converters, power supplies, and other high-power electronic systems where low on-resistance and high efficiency are critical.

Q & A

  1. What is the drain-source voltage rating of the STP26NM60N?
    The drain-source voltage rating is 600 V.
  2. What is the continuous drain current rating at 25 °C?
    The continuous drain current rating is 20 A.
  3. What is the typical on-resistance of the STP26NM60N?
    The typical on-resistance is 0.135 Ω.
  4. What technology is used in the STP26NM60N?
    The STP26NM60N uses the second generation of MDmesh™ technology.
  5. In what packages is the STP26NM60N available?
    The STP26NM60N is available in D²PAK, I²PAK, TO-220, TO-220FP, and TO-247 packages.
  6. What are the key features of the STP26NM60N?
    The key features include 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance.
  7. What are the typical applications of the STP26NM60N?
    The typical applications include switching applications and high-efficiency converters.
  8. What is the gate-source voltage rating?
    The gate-source voltage rating is ±30 V.
  9. What is the single pulse avalanche energy rating?
    The single pulse avalanche energy rating is 610 mJ.
  10. Where can I find more detailed specifications for the STP26NM60N?
    You can find more detailed specifications in the datasheet available on the STMicroelectronics website or through distributors like TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP26NM60N
STP26NM60N
MOSFET N-CH 600V 20A TO220AB
STB26NM60N
STB26NM60N
MOSFET N-CH 600V 20A D2PAK

Similar Products

Part Number STP26NM60N STP26NM60ND STP21NM60N STP22NM60N STP23NM60N STP24NM60N STP25NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 21A (Tc) 17A (Tc) 16A (Tc) 19A (Tc) 17A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 10A, 10V 175mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V 180mOhm @ 9.5A, 10V 190mOhm @ 8A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 54.6 nC @ 10 V 66 nC @ 10 V 44 nC @ 10 V 60 nC @ 10 V 46 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±30V ±25V ±25V ±30V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V 1817 pF @ 100 V 1900 pF @ 50 V 1300 pF @ 50 V 2050 pF @ 50 V 1400 pF @ 50 V 2400 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 140W (Tc) 190W (Tc) 140W (Tc) 125W (Tc) 150W (Tc) 125W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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