STP25NM60N
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STMicroelectronics STP25NM60N

Manufacturer No:
STP25NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 21A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP25NM60N is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the MDmesh™ II series, which utilizes the second generation of MDmesh™ technology. This technology combines a new vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge values. This makes the STP25NM60N highly suitable for demanding high-efficiency converters and switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±25V
Continuous Drain Current (ID) at TC = 25 °C21A
Continuous Drain Current (ID) at TC = 100 °C13A
Pulsed Drain Current (IDM)84A
Total Dissipation at TC = 25 °C160W
On-Resistance (RDS(on))< 0.160Ω
Gate Threshold Voltage (VGS(th))2 - 4V
Thermal Resistance Junction-Case (Rthj-case)0.78°C/W
Maximum Operating Junction Temperature (Tj)150°C
Storage Temperature (Tstg)-55 to 150°C

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency due to low on-resistance and gate charge
  • Available in various packages: TO-220, TO-220FP, I²PAK, D²PAK, TO-247
  • ECOPACK® lead-free second level interconnect for environmental compliance

Applications

The STP25NM60N is designed for high-efficiency switching applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial power systems
  • Automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP25NM60N?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the continuous drain current (ID) at 25 °C?
    The continuous drain current (ID) at 25 °C is 21 A.
  3. What is the on-resistance (RDS(on)) of the STP25NM60N?
    The on-resistance (RDS(on)) is less than 0.160 Ω.
  4. What are the available packages for the STP25NM60N?
    The STP25NM60N is available in TO-220, TO-220FP, I²PAK, D²PAK, and TO-247 packages.
  5. What is the maximum operating junction temperature (Tj) of the STP25NM60N?
    The maximum operating junction temperature (Tj) is 150 °C.
  6. Is the STP25NM60N environmentally compliant?
    Yes, the STP25NM60N is available in ECOPACK® lead-free second level interconnect packages, which are environmentally compliant.
  7. What is the gate threshold voltage (VGS(th)) range of the STP25NM60N?
    The gate threshold voltage (VGS(th)) range is 2 to 4 V.
  8. What is the thermal resistance junction-case (Rthj-case) of the STP25NM60N in the TO-220 package?
    The thermal resistance junction-case (Rthj-case) is 0.78 °C/W.
  9. What are some typical applications of the STP25NM60N?
    Typical applications include power supplies, motor control, industrial power systems, and automotive systems.
  10. Is the STP25NM60N 100% avalanche tested?
    Yes, the STP25NM60N is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP25NM60N STP26NM60N STP25NM60ND STP15NM60N STP21NM60N STP22NM60N STP23NM60N STP24NM60N STP25NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete Obsolete Obsolete Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 20A (Tc) 21A (Tc) 14A (Tc) 17A (Tc) 16A (Tc) 19A (Tc) 17A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V 165mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 299mOhm @ 7A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V 180mOhm @ 9.5A, 10V 190mOhm @ 8A, 10V 140mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V 60 nC @ 10 V 80 nC @ 10 V 37 nC @ 10 V 66 nC @ 10 V 44 nC @ 10 V 60 nC @ 10 V 46 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±25V ±30V ±25V ±25V ±25V ±30V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 50 V 1800 pF @ 50 V 2400 pF @ 50 V 1250 pF @ 50 V 1900 pF @ 50 V 1300 pF @ 50 V 2050 pF @ 50 V 1400 pF @ 50 V 2565 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 160W (Tc) 140W (Tc) 160W (Tc) 125W (Tc) 140W (Tc) 125W (Tc) 150W (Tc) 125W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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