STP25NM60N
  • Share:

STMicroelectronics STP25NM60N

Manufacturer No:
STP25NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 21A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP25NM60N is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the MDmesh™ II series, which utilizes the second generation of MDmesh™ technology. This technology combines a new vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge values. This makes the STP25NM60N highly suitable for demanding high-efficiency converters and switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±25V
Continuous Drain Current (ID) at TC = 25 °C21A
Continuous Drain Current (ID) at TC = 100 °C13A
Pulsed Drain Current (IDM)84A
Total Dissipation at TC = 25 °C160W
On-Resistance (RDS(on))< 0.160Ω
Gate Threshold Voltage (VGS(th))2 - 4V
Thermal Resistance Junction-Case (Rthj-case)0.78°C/W
Maximum Operating Junction Temperature (Tj)150°C
Storage Temperature (Tstg)-55 to 150°C

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency due to low on-resistance and gate charge
  • Available in various packages: TO-220, TO-220FP, I²PAK, D²PAK, TO-247
  • ECOPACK® lead-free second level interconnect for environmental compliance

Applications

The STP25NM60N is designed for high-efficiency switching applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial power systems
  • Automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP25NM60N?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the continuous drain current (ID) at 25 °C?
    The continuous drain current (ID) at 25 °C is 21 A.
  3. What is the on-resistance (RDS(on)) of the STP25NM60N?
    The on-resistance (RDS(on)) is less than 0.160 Ω.
  4. What are the available packages for the STP25NM60N?
    The STP25NM60N is available in TO-220, TO-220FP, I²PAK, D²PAK, and TO-247 packages.
  5. What is the maximum operating junction temperature (Tj) of the STP25NM60N?
    The maximum operating junction temperature (Tj) is 150 °C.
  6. Is the STP25NM60N environmentally compliant?
    Yes, the STP25NM60N is available in ECOPACK® lead-free second level interconnect packages, which are environmentally compliant.
  7. What is the gate threshold voltage (VGS(th)) range of the STP25NM60N?
    The gate threshold voltage (VGS(th)) range is 2 to 4 V.
  8. What is the thermal resistance junction-case (Rthj-case) of the STP25NM60N in the TO-220 package?
    The thermal resistance junction-case (Rthj-case) is 0.78 °C/W.
  9. What are some typical applications of the STP25NM60N?
    Typical applications include power supplies, motor control, industrial power systems, and automotive systems.
  10. Is the STP25NM60N 100% avalanche tested?
    Yes, the STP25NM60N is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
580

Please send RFQ , we will respond immediately.

Same Series
STW25NM60N
STW25NM60N
MOSFET N-CH 600V 21A TO247-3
STF25NM60N
STF25NM60N
MOSFET N-CH 600V 21A TO220FP
STB25NM60N
STB25NM60N
MOSFET N-CH 600V 21A D2PAK
STB25NM60N-1
STB25NM60N-1
MOSFET N-CH 600V 21A I2PAK

Similar Products

Part Number STP25NM60N STP26NM60N STP25NM60ND STP15NM60N STP21NM60N STP22NM60N STP23NM60N STP24NM60N STP25NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete Obsolete Obsolete Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 20A (Tc) 21A (Tc) 14A (Tc) 17A (Tc) 16A (Tc) 19A (Tc) 17A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V 165mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 299mOhm @ 7A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V 180mOhm @ 9.5A, 10V 190mOhm @ 8A, 10V 140mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V 60 nC @ 10 V 80 nC @ 10 V 37 nC @ 10 V 66 nC @ 10 V 44 nC @ 10 V 60 nC @ 10 V 46 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±25V ±30V ±25V ±25V ±25V ±30V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 50 V 1800 pF @ 50 V 2400 pF @ 50 V 1250 pF @ 50 V 1900 pF @ 50 V 1300 pF @ 50 V 2050 pF @ 50 V 1400 pF @ 50 V 2565 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 160W (Tc) 140W (Tc) 160W (Tc) 125W (Tc) 140W (Tc) 125W (Tc) 150W (Tc) 125W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3

Related Product By Brand

BTB16-800BWRG
BTB16-800BWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
STP80NF03L-04
STP80NF03L-04
STMicroelectronics
MOSFET N-CH 30V 80A TO220AB
STL6P3LLH6
STL6P3LLH6
STMicroelectronics
MOSFET P-CH 30V 6A POWERFLAT
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM32F745VGH6
STM32F745VGH6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100TFBGA
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
LD39015M33R
LD39015M33R
STMicroelectronics
IC REG LINEAR 3.3V 150MA SOT23-5
L7809ACD2T-TR
L7809ACD2T-TR
STMicroelectronics
IC REG LINEAR 9V 1.5A D2PAK