STP25NM60ND
  • Share:

STMicroelectronics STP25NM60ND

Manufacturer No:
STP25NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 21A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP25NM60ND is a high-performance N-channel power MOSFET produced by STMicroelectronics. It is part of the FDmesh™ II technology, which offers exceptional on-resistance and superior switching performance. This device is designed for high-power applications, including bridge topologies and zero-voltage switching (ZVS) phase-shift converters. The STP25NM60ND is available in various packages such as D2PAK, TO-220, TO-220FP, and TO-247, making it versatile for different design requirements.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±25V
Continuous Drain Current (ID) at TC = 25 °C21A
Continuous Drain Current (ID) at TC = 100 °C13A
Pulsed Drain Current (IDM)84A
On-Resistance (RDS(on))0.13 Ω (typ.)Ω
Gate Threshold Voltage (VGS(th))3-5V
Maximum Junction Temperature (TJ)150°C
Storage Temperature (Tstg)-55 to 150°C
Thermal Resistance Junction-Case (Rthj-case)0.78 (TO-220, TO-247), 3.1 (TO-220FP)°C/W

Key Features

  • Extremely low on-resistance (RDS(on)) of 0.13 Ω (typ.) for reduced power losses.
  • Intrinsic fast-recovery body diode for improved switching performance.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested for reliability.
  • Available in multiple packages: D2PAK, TO-220, TO-220FP, TO-247.
  • ECOPACK® compliant for environmental sustainability.

Applications

  • Switching applications in high-power systems.
  • Bridge topologies and ZVS phase-shift converters.
  • Data centers and server power supplies.
  • Telecommunications and 5G power systems.
  • Solar inverters and EV charging systems.
  • High-power density systems such as SMPS and solar microinverters.

Q & A

  1. What is the maximum drain-source voltage of the STP25NM60ND? The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STP25NM60ND? The typical on-resistance is 0.13 Ω.
  3. What are the available packages for the STP25NM60ND? The device is available in D2PAK, TO-220, TO-220FP, and TO-247 packages.
  4. What is the maximum continuous drain current at 25 °C? The maximum continuous drain current at 25 °C is 21 A.
  5. Does the STP25NM60ND have a fast recovery body diode? Yes, it features an intrinsic fast-recovery body diode.
  6. What are the typical applications of the STP25NM60ND? Typical applications include switching in high-power systems, bridge topologies, ZVS phase-shift converters, data centers, telecommunications, solar inverters, and EV charging systems.
  7. Is the STP25NM60ND environmentally compliant? Yes, it is ECOPACK® compliant.
  8. What is the maximum junction temperature of the STP25NM60ND? The maximum junction temperature is 150 °C.
  9. What is the storage temperature range for the STP25NM60ND? The storage temperature range is -55 to 150 °C.
  10. What is the thermal resistance junction-case for the TO-220 package? The thermal resistance junction-case for the TO-220 package is 0.78 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
481

Please send RFQ , we will respond immediately.

Same Series
STW25NM60ND
STW25NM60ND
MOSFET N-CH 600V 21A TO247-3
STB25NM60ND
STB25NM60ND
MOSFET N-CH 600V 21A D2PAK
STF25NM60ND
STF25NM60ND
MOSFET N-CH 600V 21A TO220FP
STI25NM60ND
STI25NM60ND
MOSFET N-CH 600V 21A I2PAK

Similar Products

Part Number STP25NM60ND STP28NM60ND STP26NM60ND STP15NM60ND STP21NM60ND STP23NM60ND STP25NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 23A (Tc) 21A (Tc) 14A (Tc) 17A (Tc) 19.5A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V 150mOhm @ 11.5A, 10V 175mOhm @ 10.5A, 10V 299mOhm @ 7A, 10V 220mOhm @ 8.5A, 10V 180mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 62.5 nC @ 10 V 54.6 nC @ 10 V 40 nC @ 10 V 60 nC @ 10 V 69 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 50 V 2090 pF @ 100 V 1817 pF @ 100 V 1250 pF @ 50 V 1800 pF @ 50 V 2100 pF @ 50 V 2400 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 160W (Tc) 190W (Tc) 190W (Tc) 125W (Tc) 140W (Tc) 150W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

STPS160H100TV
STPS160H100TV
STMicroelectronics
DIODE MODULE 100V 80A ISOTOP
STD10NF10T4
STD10NF10T4
STMicroelectronics
MOSFET N-CH 100V 13A DPAK
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STM32L071RZT6
STM32L071RZT6
STMicroelectronics
IC MCU 32BIT 192KB FLASH 64LQFP
STM32F205RBT6TR
STM32F205RBT6TR
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64LQFP
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT