STP25NM60ND
  • Share:

STMicroelectronics STP25NM60ND

Manufacturer No:
STP25NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 21A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP25NM60ND is a high-performance N-channel power MOSFET produced by STMicroelectronics. It is part of the FDmesh™ II technology, which offers exceptional on-resistance and superior switching performance. This device is designed for high-power applications, including bridge topologies and zero-voltage switching (ZVS) phase-shift converters. The STP25NM60ND is available in various packages such as D2PAK, TO-220, TO-220FP, and TO-247, making it versatile for different design requirements.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±25V
Continuous Drain Current (ID) at TC = 25 °C21A
Continuous Drain Current (ID) at TC = 100 °C13A
Pulsed Drain Current (IDM)84A
On-Resistance (RDS(on))0.13 Ω (typ.)Ω
Gate Threshold Voltage (VGS(th))3-5V
Maximum Junction Temperature (TJ)150°C
Storage Temperature (Tstg)-55 to 150°C
Thermal Resistance Junction-Case (Rthj-case)0.78 (TO-220, TO-247), 3.1 (TO-220FP)°C/W

Key Features

  • Extremely low on-resistance (RDS(on)) of 0.13 Ω (typ.) for reduced power losses.
  • Intrinsic fast-recovery body diode for improved switching performance.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested for reliability.
  • Available in multiple packages: D2PAK, TO-220, TO-220FP, TO-247.
  • ECOPACK® compliant for environmental sustainability.

Applications

  • Switching applications in high-power systems.
  • Bridge topologies and ZVS phase-shift converters.
  • Data centers and server power supplies.
  • Telecommunications and 5G power systems.
  • Solar inverters and EV charging systems.
  • High-power density systems such as SMPS and solar microinverters.

Q & A

  1. What is the maximum drain-source voltage of the STP25NM60ND? The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STP25NM60ND? The typical on-resistance is 0.13 Ω.
  3. What are the available packages for the STP25NM60ND? The device is available in D2PAK, TO-220, TO-220FP, and TO-247 packages.
  4. What is the maximum continuous drain current at 25 °C? The maximum continuous drain current at 25 °C is 21 A.
  5. Does the STP25NM60ND have a fast recovery body diode? Yes, it features an intrinsic fast-recovery body diode.
  6. What are the typical applications of the STP25NM60ND? Typical applications include switching in high-power systems, bridge topologies, ZVS phase-shift converters, data centers, telecommunications, solar inverters, and EV charging systems.
  7. Is the STP25NM60ND environmentally compliant? Yes, it is ECOPACK® compliant.
  8. What is the maximum junction temperature of the STP25NM60ND? The maximum junction temperature is 150 °C.
  9. What is the storage temperature range for the STP25NM60ND? The storage temperature range is -55 to 150 °C.
  10. What is the thermal resistance junction-case for the TO-220 package? The thermal resistance junction-case for the TO-220 package is 0.78 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
481

Please send RFQ , we will respond immediately.

Same Series
STW25NM60ND
STW25NM60ND
MOSFET N-CH 600V 21A TO247-3
STB25NM60ND
STB25NM60ND
MOSFET N-CH 600V 21A D2PAK
STF25NM60ND
STF25NM60ND
MOSFET N-CH 600V 21A TO220FP
STI25NM60ND
STI25NM60ND
MOSFET N-CH 600V 21A I2PAK

Similar Products

Part Number STP25NM60ND STP28NM60ND STP26NM60ND STP15NM60ND STP21NM60ND STP23NM60ND STP25NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 23A (Tc) 21A (Tc) 14A (Tc) 17A (Tc) 19.5A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V 150mOhm @ 11.5A, 10V 175mOhm @ 10.5A, 10V 299mOhm @ 7A, 10V 220mOhm @ 8.5A, 10V 180mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 62.5 nC @ 10 V 54.6 nC @ 10 V 40 nC @ 10 V 60 nC @ 10 V 69 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 50 V 2090 pF @ 100 V 1817 pF @ 100 V 1250 pF @ 50 V 1800 pF @ 50 V 2100 pF @ 50 V 2400 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 160W (Tc) 190W (Tc) 190W (Tc) 125W (Tc) 140W (Tc) 150W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
STM32F745VGH6
STM32F745VGH6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100TFBGA
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
L9301-TR
L9301-TR
STMicroelectronics
IC PWR DRIVER N-CHANNEL PWRSSO36
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12