STP25NM60ND
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STMicroelectronics STP25NM60ND

Manufacturer No:
STP25NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 21A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP25NM60ND is a high-performance N-channel power MOSFET produced by STMicroelectronics. It is part of the FDmesh™ II technology, which offers exceptional on-resistance and superior switching performance. This device is designed for high-power applications, including bridge topologies and zero-voltage switching (ZVS) phase-shift converters. The STP25NM60ND is available in various packages such as D2PAK, TO-220, TO-220FP, and TO-247, making it versatile for different design requirements.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±25V
Continuous Drain Current (ID) at TC = 25 °C21A
Continuous Drain Current (ID) at TC = 100 °C13A
Pulsed Drain Current (IDM)84A
On-Resistance (RDS(on))0.13 Ω (typ.)Ω
Gate Threshold Voltage (VGS(th))3-5V
Maximum Junction Temperature (TJ)150°C
Storage Temperature (Tstg)-55 to 150°C
Thermal Resistance Junction-Case (Rthj-case)0.78 (TO-220, TO-247), 3.1 (TO-220FP)°C/W

Key Features

  • Extremely low on-resistance (RDS(on)) of 0.13 Ω (typ.) for reduced power losses.
  • Intrinsic fast-recovery body diode for improved switching performance.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested for reliability.
  • Available in multiple packages: D2PAK, TO-220, TO-220FP, TO-247.
  • ECOPACK® compliant for environmental sustainability.

Applications

  • Switching applications in high-power systems.
  • Bridge topologies and ZVS phase-shift converters.
  • Data centers and server power supplies.
  • Telecommunications and 5G power systems.
  • Solar inverters and EV charging systems.
  • High-power density systems such as SMPS and solar microinverters.

Q & A

  1. What is the maximum drain-source voltage of the STP25NM60ND? The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STP25NM60ND? The typical on-resistance is 0.13 Ω.
  3. What are the available packages for the STP25NM60ND? The device is available in D2PAK, TO-220, TO-220FP, and TO-247 packages.
  4. What is the maximum continuous drain current at 25 °C? The maximum continuous drain current at 25 °C is 21 A.
  5. Does the STP25NM60ND have a fast recovery body diode? Yes, it features an intrinsic fast-recovery body diode.
  6. What are the typical applications of the STP25NM60ND? Typical applications include switching in high-power systems, bridge topologies, ZVS phase-shift converters, data centers, telecommunications, solar inverters, and EV charging systems.
  7. Is the STP25NM60ND environmentally compliant? Yes, it is ECOPACK® compliant.
  8. What is the maximum junction temperature of the STP25NM60ND? The maximum junction temperature is 150 °C.
  9. What is the storage temperature range for the STP25NM60ND? The storage temperature range is -55 to 150 °C.
  10. What is the thermal resistance junction-case for the TO-220 package? The thermal resistance junction-case for the TO-220 package is 0.78 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP25NM60ND STP28NM60ND STP26NM60ND STP15NM60ND STP21NM60ND STP23NM60ND STP25NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 23A (Tc) 21A (Tc) 14A (Tc) 17A (Tc) 19.5A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V 150mOhm @ 11.5A, 10V 175mOhm @ 10.5A, 10V 299mOhm @ 7A, 10V 220mOhm @ 8.5A, 10V 180mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 62.5 nC @ 10 V 54.6 nC @ 10 V 40 nC @ 10 V 60 nC @ 10 V 69 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 50 V 2090 pF @ 100 V 1817 pF @ 100 V 1250 pF @ 50 V 1800 pF @ 50 V 2100 pF @ 50 V 2400 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 160W (Tc) 190W (Tc) 190W (Tc) 125W (Tc) 140W (Tc) 150W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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