Overview
The STP26NM60ND is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is part of the FDmesh™ II family, known for its extremely low on-resistance and superior switching performance. The STP26NM60ND is available in the TO-220 package and is designed to meet the demands of high-efficiency converters and switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 21 | A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.145 (typ), 0.175 (max) | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Maximum Junction Temperature (TJ) | 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 0.66 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 50 | °C/W |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
- Intrinsic fast-recovery body diode
- Utilizes the second generation of MDmesh™ technology with a new strip-layout vertical structure
Applications
- Switching applications
- High-efficiency converters
- Bridge topologies
- ZVS phase-shift converters
Q & A
- What is the maximum drain-source voltage (VDS) of the STP26NM60ND?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical static drain-source on-resistance (RDS(on)) of the STP26NM60ND?
The typical static drain-source on-resistance (RDS(on)) is 0.145 Ω.
- What is the maximum continuous drain current (ID) at TC = 25 °C for the STP26NM60ND?
The maximum continuous drain current (ID) at TC = 25 °C is 21 A.
- What are the key features of the STP26NM60ND?
The key features include 100% avalanche testing, low input capacitance and gate charge, low gate input resistance, and extremely high dv/dt and avalanche capabilities.
- In which package is the STP26NM60ND available?
The STP26NM60ND is available in the TO-220 package.
- What is the maximum junction temperature (TJ) for the STP26NM60ND?
The maximum junction temperature (TJ) is 150 °C.
- What are the typical applications of the STP26NM60ND?
The typical applications include switching applications, high-efficiency converters, bridge topologies, and ZVS phase-shift converters.
- What technology is used in the STP26NM60ND?
The STP26NM60ND uses the second generation of MDmesh™ technology with a new strip-layout vertical structure.
- What is the thermal resistance junction-case (Rthj-case) for the STP26NM60ND?
The thermal resistance junction-case (Rthj-case) is 0.66 °C/W.
- Is the STP26NM60ND suitable for high dv/dt applications?
Yes, the STP26NM60ND has extremely high dv/dt and avalanche capabilities, making it suitable for such applications.
