STP23NM60ND
  • Share:

STMicroelectronics STP23NM60ND

Manufacturer No:
STP23NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 19.5A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP23NM60ND is a high-performance N-Channel Power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ II Power MOSFET family, which utilizes the second generation of MDmesh™ technology. It is designed to offer high efficiency and reliability in various power management applications. The STP23NM60ND is packaged in a TO-220 through-hole configuration, making it suitable for a wide range of industrial and consumer electronics.

Key Specifications

Parameter Value
Vds - Drain-Source Voltage 600 V
Id - Continuous Drain Current 19.5 A (Tc)
Pd - Power Dissipation 150 W (Tc)
Rds On - Drain-Source Resistance 180 mOhms
Vgs - Gate-Source Voltage -25 V to +25 V
Tj - Junction Temperature -55°C to 150°C
Package TO-220

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-resistance (Rds On) of 180 mOhms, enhancing efficiency and reducing power losses.
  • Intrinsic fast-recovery body diode, which improves switching performance.
  • MDmesh™ II technology for enhanced performance and reliability.
  • TO-220 package for easy mounting and thermal management.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Consumer electronics requiring high power handling.
  • Railway and automotive systems where high reliability is crucial.

Q & A

  1. What is the maximum drain-source voltage of the STP23NM60ND?

    The maximum drain-source voltage (Vds) is 600 V.

  2. What is the continuous drain current rating of the STP23NM60ND?

    The continuous drain current (Id) is 19.5 A (Tc).

  3. What is the power dissipation rating of the STP23NM60ND?

    The power dissipation (Pd) is 150 W (Tc).

  4. What is the on-resistance (Rds On) of the STP23NM60ND?

    The on-resistance (Rds On) is 180 mOhms.

  5. What is the gate-source voltage range for the STP23NM60ND?

    The gate-source voltage (Vgs) range is -25 V to +25 V.

  6. What is the junction temperature range for the STP23NM60ND?

    The junction temperature (Tj) range is -55°C to 150°C.

  7. What package type is the STP23NM60ND available in?

    The STP23NM60ND is available in a TO-220 package.

  8. What technology is used in the STP23NM60ND?

    The STP23NM60ND uses the second generation of MDmesh™ technology.

  9. What are some common applications for the STP23NM60ND?

    Common applications include power supplies, motor control systems, industrial automation, consumer electronics, and railway/automotive systems.

  10. Where can I find detailed specifications and datasheets for the STP23NM60ND?

    Detailed specifications and datasheets can be found on the official STMicroelectronics website, as well as through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
581

Please send RFQ , we will respond immediately.

Same Series
STF23NM60ND
STF23NM60ND
MOSFET N-CH 600V 19.5A TO220FP
STW23NM60ND
STW23NM60ND
MOSFET N-CH 600V 19.5A TO247-3
STB23NM60ND
STB23NM60ND
MOSFET N-CH 600V 19.5A D2PAK
STI23NM60ND
STI23NM60ND
MOSFET N-CH 600V 19.5A I2PAK

Similar Products

Part Number STP23NM60ND STP28NM60ND STP25NM60ND STP26NM60ND STP21NM60ND STP23NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 19.5A (Tc) 23A (Tc) 21A (Tc) 21A (Tc) 17A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V 150mOhm @ 11.5A, 10V 160mOhm @ 10.5A, 10V 175mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V 180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V 62.5 nC @ 10 V 80 nC @ 10 V 54.6 nC @ 10 V 60 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 50 V 2090 pF @ 100 V 2400 pF @ 50 V 1817 pF @ 100 V 1800 pF @ 50 V 2050 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 150W (Tc) 190W (Tc) 160W (Tc) 190W (Tc) 140W (Tc) 150W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STF14NM50N
STF14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A TO220FP
STD14NM50N
STD14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A DPAK
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
STM32L4A6QGI6P
STM32L4A6QGI6P
STMicroelectronics
IC MCU 32BIT 1MB FLASH 132UFBGA
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
VNQ830PEP-E
VNQ830PEP-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT