STP23NM60ND
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STMicroelectronics STP23NM60ND

Manufacturer No:
STP23NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 19.5A TO220AB
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STP23NM60ND is a high-performance N-Channel Power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ II Power MOSFET family, which utilizes the second generation of MDmesh™ technology. It is designed to offer high efficiency and reliability in various power management applications. The STP23NM60ND is packaged in a TO-220 through-hole configuration, making it suitable for a wide range of industrial and consumer electronics.

Key Specifications

Parameter Value
Vds - Drain-Source Voltage 600 V
Id - Continuous Drain Current 19.5 A (Tc)
Pd - Power Dissipation 150 W (Tc)
Rds On - Drain-Source Resistance 180 mOhms
Vgs - Gate-Source Voltage -25 V to +25 V
Tj - Junction Temperature -55°C to 150°C
Package TO-220

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-resistance (Rds On) of 180 mOhms, enhancing efficiency and reducing power losses.
  • Intrinsic fast-recovery body diode, which improves switching performance.
  • MDmesh™ II technology for enhanced performance and reliability.
  • TO-220 package for easy mounting and thermal management.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Consumer electronics requiring high power handling.
  • Railway and automotive systems where high reliability is crucial.

Q & A

  1. What is the maximum drain-source voltage of the STP23NM60ND?

    The maximum drain-source voltage (Vds) is 600 V.

  2. What is the continuous drain current rating of the STP23NM60ND?

    The continuous drain current (Id) is 19.5 A (Tc).

  3. What is the power dissipation rating of the STP23NM60ND?

    The power dissipation (Pd) is 150 W (Tc).

  4. What is the on-resistance (Rds On) of the STP23NM60ND?

    The on-resistance (Rds On) is 180 mOhms.

  5. What is the gate-source voltage range for the STP23NM60ND?

    The gate-source voltage (Vgs) range is -25 V to +25 V.

  6. What is the junction temperature range for the STP23NM60ND?

    The junction temperature (Tj) range is -55°C to 150°C.

  7. What package type is the STP23NM60ND available in?

    The STP23NM60ND is available in a TO-220 package.

  8. What technology is used in the STP23NM60ND?

    The STP23NM60ND uses the second generation of MDmesh™ technology.

  9. What are some common applications for the STP23NM60ND?

    Common applications include power supplies, motor control systems, industrial automation, consumer electronics, and railway/automotive systems.

  10. Where can I find detailed specifications and datasheets for the STP23NM60ND?

    Detailed specifications and datasheets can be found on the official STMicroelectronics website, as well as through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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STB23NM60ND
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Similar Products

Part Number STP23NM60ND STP28NM60ND STP25NM60ND STP26NM60ND STP21NM60ND STP23NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 19.5A (Tc) 23A (Tc) 21A (Tc) 21A (Tc) 17A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V 150mOhm @ 11.5A, 10V 160mOhm @ 10.5A, 10V 175mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V 180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V 62.5 nC @ 10 V 80 nC @ 10 V 54.6 nC @ 10 V 60 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 50 V 2090 pF @ 100 V 2400 pF @ 50 V 1817 pF @ 100 V 1800 pF @ 50 V 2050 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 150W (Tc) 190W (Tc) 160W (Tc) 190W (Tc) 140W (Tc) 150W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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