STB25NM60ND
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STMicroelectronics STB25NM60ND

Manufacturer No:
STB25NM60ND
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 21A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB25NM60ND is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ II technology family, known for its high efficiency and reliability. The STB25NM60ND is designed to operate at high voltages and currents, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
On-Resistance (Rds(on))0.13 Ω (typical)
Continuous Drain Current (Id)21 A
Package TypesD2PAK, I2PAK, TO-220FP, TO-220, TO-247
Gate-Source Threshold Voltage (Vgs(th))2-4 V

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of 0.13 Ω, which minimizes power losses and enhances efficiency.
  • High continuous drain current of 21 A, supporting demanding power requirements.
  • FDmesh™ II technology for improved thermal performance and reliability.
  • Fast diode integrated for better switching characteristics.
  • Available in multiple package types (D2PAK, I2PAK, TO-220FP, TO-220, TO-247) to fit various design needs.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power systems and automation.
  • Renewable energy systems, such as solar and wind power.
  • High-power audio amplifiers and other high-current applications.

Q & A

  1. What is the voltage rating of the STB25NM60ND MOSFET?
    The STB25NM60ND has a voltage rating of 600 V.
  2. What is the typical on-resistance of the STB25NM60ND?
    The typical on-resistance (Rds(on)) is 0.13 Ω.
  3. What is the maximum continuous drain current of the STB25NM60ND?
    The maximum continuous drain current is 21 A.
  4. What technology is used in the STB25NM60ND?
    The STB25NM60ND uses FDmesh™ II technology.
  5. In what packages is the STB25NM60ND available?
    The STB25NM60ND is available in D2PAK, I2PAK, TO-220FP, TO-220, and TO-247 packages.
  6. What are some common applications for the STB25NM60ND?
    Common applications include power supplies, motor control systems, industrial power systems, renewable energy systems, and high-power audio amplifiers.
  7. Does the STB25NM60ND have an integrated diode?
    Yes, the STB25NM60ND has a fast diode integrated.
  8. What is the gate-source threshold voltage range of the STB25NM60ND?
    The gate-source threshold voltage (Vgs(th)) range is 2-4 V.
  9. Who is the manufacturer of the STB25NM60ND?
    The STB25NM60ND is manufactured by STMicroelectronics.
  10. Where can I find detailed specifications for the STB25NM60ND?
    Detailed specifications can be found in the datasheet available on the STMicroelectronics website or through distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB25NM60ND STB28NM60ND STB27NM60ND STB26NM60ND STB15NM60ND STB21NM60ND STB23NM60ND STB25NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Not For New Designs Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 23A (Tc) 21A (Tc) 21A (Tc) 14A (Tc) 17A (Tc) 19.5A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V 150mOhm @ 11.5A, 10V 160mOhm @ 10.5A, 10V 175mOhm @ 10.5A, 10V 299mOhm @ 7A, 10V 220mOhm @ 8.5A, 10V 180mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 62.5 nC @ 10 V 80 nC @ 10 V 54.6 nC @ 10 V 40 nC @ 10 V 60 nC @ 10 V 70 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 50 V 2090 pF @ 100 V 2400 pF @ 50 V 1817 pF @ 100 V 1250 pF @ 50 V 1800 pF @ 50 V 2050 pF @ 50 V 2400 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 160W (Tc) 190W (Tc) 160W (Tc) 190W (Tc) 125W (Tc) 140W (Tc) 150W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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