STB25NM60ND
  • Share:

STMicroelectronics STB25NM60ND

Manufacturer No:
STB25NM60ND
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 21A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB25NM60ND is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ II technology family, known for its high efficiency and reliability. The STB25NM60ND is designed to operate at high voltages and currents, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
On-Resistance (Rds(on))0.13 Ω (typical)
Continuous Drain Current (Id)21 A
Package TypesD2PAK, I2PAK, TO-220FP, TO-220, TO-247
Gate-Source Threshold Voltage (Vgs(th))2-4 V

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of 0.13 Ω, which minimizes power losses and enhances efficiency.
  • High continuous drain current of 21 A, supporting demanding power requirements.
  • FDmesh™ II technology for improved thermal performance and reliability.
  • Fast diode integrated for better switching characteristics.
  • Available in multiple package types (D2PAK, I2PAK, TO-220FP, TO-220, TO-247) to fit various design needs.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power systems and automation.
  • Renewable energy systems, such as solar and wind power.
  • High-power audio amplifiers and other high-current applications.

Q & A

  1. What is the voltage rating of the STB25NM60ND MOSFET?
    The STB25NM60ND has a voltage rating of 600 V.
  2. What is the typical on-resistance of the STB25NM60ND?
    The typical on-resistance (Rds(on)) is 0.13 Ω.
  3. What is the maximum continuous drain current of the STB25NM60ND?
    The maximum continuous drain current is 21 A.
  4. What technology is used in the STB25NM60ND?
    The STB25NM60ND uses FDmesh™ II technology.
  5. In what packages is the STB25NM60ND available?
    The STB25NM60ND is available in D2PAK, I2PAK, TO-220FP, TO-220, and TO-247 packages.
  6. What are some common applications for the STB25NM60ND?
    Common applications include power supplies, motor control systems, industrial power systems, renewable energy systems, and high-power audio amplifiers.
  7. Does the STB25NM60ND have an integrated diode?
    Yes, the STB25NM60ND has a fast diode integrated.
  8. What is the gate-source threshold voltage range of the STB25NM60ND?
    The gate-source threshold voltage (Vgs(th)) range is 2-4 V.
  9. Who is the manufacturer of the STB25NM60ND?
    The STB25NM60ND is manufactured by STMicroelectronics.
  10. Where can I find detailed specifications for the STB25NM60ND?
    Detailed specifications can be found in the datasheet available on the STMicroelectronics website or through distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
320

Please send RFQ , we will respond immediately.

Same Series
STW25NM60ND
STW25NM60ND
MOSFET N-CH 600V 21A TO247-3
STB25NM60ND
STB25NM60ND
MOSFET N-CH 600V 21A D2PAK
STF25NM60ND
STF25NM60ND
MOSFET N-CH 600V 21A TO220FP
STI25NM60ND
STI25NM60ND
MOSFET N-CH 600V 21A I2PAK

Similar Products

Part Number STB25NM60ND STB28NM60ND STB27NM60ND STB26NM60ND STB15NM60ND STB21NM60ND STB23NM60ND STB25NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Not For New Designs Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 23A (Tc) 21A (Tc) 21A (Tc) 14A (Tc) 17A (Tc) 19.5A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V 150mOhm @ 11.5A, 10V 160mOhm @ 10.5A, 10V 175mOhm @ 10.5A, 10V 299mOhm @ 7A, 10V 220mOhm @ 8.5A, 10V 180mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 62.5 nC @ 10 V 80 nC @ 10 V 54.6 nC @ 10 V 40 nC @ 10 V 60 nC @ 10 V 70 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 50 V 2090 pF @ 100 V 2400 pF @ 50 V 1817 pF @ 100 V 1250 pF @ 50 V 1800 pF @ 50 V 2050 pF @ 50 V 2400 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 160W (Tc) 190W (Tc) 160W (Tc) 190W (Tc) 125W (Tc) 140W (Tc) 150W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
BYT71-800
BYT71-800
STMicroelectronics
DIODE GEN PURP 800V 6A TO220AC
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STM32L412CBU6
STM32L412CBU6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 48UFQFPN
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32F745VGH6
STM32F745VGH6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100TFBGA
STG3157CTR
STG3157CTR
STMicroelectronics
IC SWITCH SPDT SINGLE SOT323-6L
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB