STF21NM60N
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STMicroelectronics STF21NM60N

Manufacturer No:
STF21NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 17A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF21NM60N is a high-performance N-Channel MOSFET produced by STMicroelectronics. This device is part of the MDmesh™ II series, known for its high efficiency and reliability. Although the STF21NM60N is currently obsolete and no longer manufactured, it remains a significant component in various legacy systems and designs.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)600V
Continuous Drain Current (Id) @ 25°C17A
On-Resistance (Rds On) @ Id, Vgs190 mOhm @ 7.5A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id4V @ 250µA
Maximum Gate Voltage (Vgs)±25V
Package / CaseTO-220FP
Operating Temperature (TJ)150°C
Power Dissipation (Max) @ Tc30W
Input Capacitance (Ciss) @ Vds1280pF @ 50V
Gate Charge (Qg) @ Vgs44nC @ 10V

Key Features

  • Zener-protected for enhanced reliability and protection against voltage spikes.
  • 100% avalanche tested to ensure robustness under extreme conditions.
  • Low on-resistance (Rds On) of 190 mOhm, contributing to high efficiency in power management.
  • High drain to source voltage (Vdss) of 600V, making it suitable for high-voltage applications.
  • MDmesh™ II technology for improved performance and thermal management.

Applications

The STF21NM60N is ideal for various high-power applications, including:

  • Flyback converters due to its high voltage and current handling capabilities.
  • LED lighting systems where high efficiency and reliability are crucial.
  • Power supplies and switching circuits that require robust and efficient MOSFETs.

Q & A

  1. What is the maximum drain to source voltage of the STF21NM60N?
    The maximum drain to source voltage (Vdss) is 600V.
  2. What is the continuous drain current rating of the STF21NM60N at 25°C?
    The continuous drain current (Id) at 25°C is 17A.
  3. What is the on-resistance (Rds On) of the STF21NM60N?
    The on-resistance (Rds On) is 190 mOhm at 7.5A and 10V Vgs.
  4. What is the gate threshold voltage (Vgs(th)) of the STF21NM60N?
    The gate threshold voltage (Vgs(th)) is 4V at 250µA.
  5. What is the maximum gate voltage (Vgs) for the STF21NM60N?
    The maximum gate voltage (Vgs) is ±25V.
  6. In what package is the STF21NM60N available?
    The STF21NM60N is available in the TO-220FP package.
  7. What is the operating temperature range for the STF21NM60N?
    The operating temperature (TJ) is up to 150°C.
  8. What is the maximum power dissipation for the STF21NM60N?
    The maximum power dissipation at Tc is 30W.
  9. Is the STF21NM60N still in production?
    No, the STF21NM60N is currently obsolete and no longer manufactured.
  10. What are some common applications for the STF21NM60N?
    Common applications include flyback converters, LED lighting systems, and power supplies.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF21NM60N STF21NM60ND STF24NM60N STF22NM60N STF26NM60N STF25NM60N STF23NM60N STF11NM60N STF21NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Active Active Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 17A (Tc) 17A (Tc) 16A (Tc) 20A (Tc) 21A (Tc) 19A (Tc) 10A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 8.5A, 10V 220mOhm @ 8.5A, 10V 190mOhm @ 8A, 10V 220mOhm @ 8A, 10V 165mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 180mOhm @ 9.5A, 10V 450mOhm @ 5A, 10V 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 60 nC @ 10 V 46 nC @ 10 V 44 nC @ 10 V 60 nC @ 10 V 84 nC @ 10 V 60 nC @ 10 V 31 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±25V ±25V ±30V ±30V ±30V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 50 V 1800 pF @ 50 V 1400 pF @ 50 V 1300 pF @ 50 V 1800 pF @ 50 V 2400 pF @ 50 V 2050 pF @ 50 V 850 pF @ 50 V 1950 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 30W (Tc) 30W (Tc) 35W (Tc) 40W (Tc) 35W (Tc) 25W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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