Overview
The STW26NM60 is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This revolutionary MOSFET combines a vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge. This makes it highly suitable for high-efficiency converters and demanding switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STW26NM60 | - |
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 20 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 12.6 | A |
| Pulsed Drain Current (IDM) | 80 | A |
| Total Dissipation at TC = 25 °C | 140 | W |
| Thermal Resistance Junction-Case | 0.89 | °C/W |
| Thermal Resistance Junction-Ambient | 50 | °C/W |
| Static Drain-Source On-Resistance (RDS(on)) | 0.135 (typ), 0.165 (max) | Ω |
| Gate Threshold Voltage (VGS(th)) | 2-4 | V |
| Input Capacitance (Ciss) | 1800 | pF |
| Output Capacitance (Coss) | 115 | pF |
| Reverse Transfer Capacitance (Crss) | 6 | pF |
| Total Gate Charge (Qg) | 60 | nC |
Key Features
- Low input capacitance and gate charge, enhancing switching efficiency.
- Low gate input resistance.
- 100% avalanche tested, ensuring robustness under high stress conditions.
- Vertical structure combined with strip layout, resulting in low on-resistance and high efficiency.
- Zener-protected for added reliability.
- Available in ECOPACK® packages, meeting various environmental compliance levels.
Applications
- High-efficiency converters.
- Switching applications, including power supplies, motor drives, and DC-DC converters.
- Industrial and automotive systems requiring high reliability and efficiency.
Q & A
- What is the maximum drain-source voltage (VDS) of the STW26NM60?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current (ID) at 25 °C?
The continuous drain current (ID) at 25 °C is 20 A.
- What is the typical on-resistance (RDS(on)) of the STW26NM60?
The typical on-resistance (RDS(on)) is 0.135 Ω.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 2-4 V.
- What is the total gate charge (Qg) of the STW26NM60?
The total gate charge (Qg) is 60 nC.
- What are the thermal resistance values for junction-case and junction-ambient?
The thermal resistance junction-case is 0.89 °C/W, and the thermal resistance junction-ambient is 50 °C/W.
- Is the STW26NM60 100% avalanche tested?
Yes, the STW26NM60 is 100% avalanche tested.
- What type of package is the STW26NM60 available in?
The STW26NM60 is available in a TO-247 package.
- What are some common applications for the STW26NM60?
Common applications include high-efficiency converters, switching applications, and industrial and automotive systems.
- Does the STW26NM60 come in environmentally compliant packages?
Yes, the STW26NM60 is available in ECOPACK® packages, which meet various environmental compliance levels.
