Overview
The MMBT2907ALT1 is a PNP general-purpose transistor manufactured by onsemi. This transistor is part of the MMBT2907AL series, which includes the SMMBT2907AL and MMBT2907AL models. It is designed for a wide range of applications, including automotive and other sectors requiring unique site and control change requirements. The device is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards.
The transistor is packaged in a SOT-23 (TO-236AB) case, which is Pb-free, halogen-free, and RoHS compliant. This makes it suitable for use in environmentally friendly and regulated environments.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -60 | -60 | Vdc |
| Collector-Base Voltage | VCBO | -60 | -60 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | -5.0 | Vdc |
| Collector Current - Continuous | IC | -600 | -600 | mAdc |
| Collector Current - Peak | ICM | -1200 | -1200 | mAdc |
| Total Device Dissipation - FR-5 Board | PD | 225 | 1.8 | mW/°C |
| Thermal Resistance, Junction-to-Ambient | RJA | 556 | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | -55 to +150 | °C |
| DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) | hFE | 75 | 300 | - |
| Collector-Emitter Saturation Voltage (IC = -150 mAdc, IB = -15 mAdc) | VCE(sat) | -0.4 | -1.6 | Vdc |
| Base-Emitter Saturation Voltage (IC = -150 mAdc, IB = -15 mAdc) | VBE(sat) | -1.3 | -2.6 | Vdc |
| Current-Gain - Bandwidth Product (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) | fT | 200 | - | MHz |
Key Features
- AEC-Q101 Qualified and PPAP Capable: Ensures high reliability and compliance with automotive standards.
- Pb-free, Halogen-free, and RoHS Compliant: Environmentally friendly packaging.
- High DC Current Gain: hFE ranges from 75 to 300, depending on the collector current.
- Low Saturation Voltages: VCE(sat) and VBE(sat) are minimized for efficient operation.
- High Current-Gain - Bandwidth Product: fT of 200 MHz at IC = -50 mAdc and VCE = -20 Vdc.
- Fast Switching Times: Turn-on time (ton) of 45 ns and turn-off time (toff) of 100 ns.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- General Purpose Amplification: Can be used in a wide range of amplification circuits.
- Switching Circuits: Fast switching times make it ideal for switching applications.
- Consumer Electronics: Applicable in consumer electronics where reliability and environmental compliance are crucial.
Q & A
- What is the maximum collector-emitter voltage for the MMBT2907ALT1?
The maximum collector-emitter voltage (VCEO) is -60 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) is -600 mAdc.
- Is the MMBT2907ALT1 RoHS compliant?
Yes, the MMBT2907ALT1 is Pb-free, halogen-free, and RoHS compliant.
- What is the typical DC current gain (hFE) for this transistor?
The DC current gain (hFE) ranges from 75 to 300, depending on the collector current.
- What are the typical turn-on and turn-off times for the MMBT2907ALT1?
The turn-on time (ton) is typically 45 ns, and the turn-off time (toff) is typically 100 ns.
- What is the current-gain - bandwidth product (fT) for this transistor?
The current-gain - bandwidth product (fT) is 200 MHz at IC = -50 mAdc and VCE = -20 Vdc.
- What are the thermal resistance and total device dissipation for the FR-5 board?
The thermal resistance (RJA) is 556 °C/W, and the total device dissipation (PD) is 225 mW with a derate of 1.8 mW/°C above 25°C.
- What is the junction and storage temperature range for the MMBT2907ALT1?
The junction and storage temperature range is -55°C to +150°C.
- Is the MMBT2907ALT1 suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What is the package type for the MMBT2907ALT1?
The transistor is packaged in a SOT-23 (TO-236AB) case.
