Overview
The MMBT2907AWT1G is a general-purpose PNP silicon transistor manufactured by onsemi. It is designed for low power surface mount applications and is housed in the SC−70/SOT−323 package. This transistor is suitable for various amplifier applications due to its robust electrical characteristics and compact packaging.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -60 | Vdc |
| Collector-Base Voltage | VCBO | -60 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current - Continuous | IC | -600 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 150 | mW |
| Thermal Resistance Junction-to-Ambient | RJA | 833 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = -0.1 mA, VCE = -10 V) | HFE | 75 - 340 | - |
| Collector-Emitter Saturation Voltage (IC = -150 mA, IB = -15 mA) | VCE(sat) | -0.4 | Vdc |
| Base-Emitter Saturation Voltage (IC = -150 mA, IB = -15 mA) | VBE(sat) | -1.3 | Vdc |
| Current-Gain - Bandwidth Product (IC = -50 mA, VCE = 20 V, f = 100 MHz) | fT | 200 | MHz |
Key Features
- NSV Prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- Compact SC−70/SOT−323 package designed for low power surface mount applications.
- High collector-emitter voltage (VCEO) of -60 Vdc and collector-base voltage (VCBO) of -60 Vdc.
- Low thermal resistance and high junction temperature range (-55°C to +150°C).
- High DC current gain (HFE) and low saturation voltages.
Applications
The MMBT2907AWT1G is suitable for a variety of general-purpose amplifier applications, including:
- Automotive systems requiring AEC-Q101 qualification.
- Low power surface mount designs.
- Audio amplifiers and other signal processing circuits.
- Switching and linear amplifier circuits.
- General-purpose electronic devices where compact, reliable transistors are needed.
Q & A
- What is the maximum collector-emitter voltage of the MMBT2907AWT1G?
The maximum collector-emitter voltage (VCEO) is -60 Vdc.
- What is the package type of the MMBT2907AWT1G?
The transistor is housed in the SC−70/SOT−323 package.
- Is the MMBT2907AWT1G RoHS compliant?
- What is the maximum continuous collector current of the MMBT2907AWT1G?
The maximum continuous collector current (IC) is -600 mA.
- What is the thermal resistance junction-to-ambient of the MMBT2907AWT1G?
The thermal resistance junction-to-ambient (RJA) is 833 °C/W.
- What is the typical DC current gain (HFE) of the MMBT2907AWT1G?
The typical DC current gain (HFE) ranges from 75 to 340 depending on the collector current.
- What are the junction and storage temperature ranges for the MMBT2907AWT1G?
The junction and storage temperature ranges are -55°C to +150°C.
- Is the MMBT2907AWT1G suitable for automotive applications?
- What is the current-gain - bandwidth product (fT) of the MMBT2907AWT1G?
The current-gain - bandwidth product (fT) is 200 MHz at IC = -50 mA and VCE = 20 V.
- What are the typical turn-on and turn-off times for the MMBT2907AWT1G?
The typical turn-on time (ton) is 45 ns, and the typical turn-off time (toff) is 100 ns.
