Overview
The NTD3055L170-001 is a high-performance N-Channel MOSFET produced by onsemi. This component is designed to offer excellent electrical characteristics, making it suitable for a wide range of electronic applications. With its logic-level gate drive, it is particularly useful in systems where low gate drive voltages are required. The MOSFET features a compact I-PAK package, which helps in reducing board space requirements, making it ideal for space-constrained designs.
Key Specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 25 V |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Power Dissipation (Max) | 1.5W (Ta), 28.5W (Tj) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 4.5A, 5V |
| Supplier Device Package | I-PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±15V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
Key Features
- High Current Capability: The NTD3055L170-001 can handle a continuous drain current of 9A at 25°C, making it suitable for high-power applications.
- Logic-Level Gate Drive: This MOSFET can be driven with a low gate voltage of 5V, which is convenient for systems with limited gate drive capabilities.
- Compact Packaging: The I-PAK package reduces board space requirements, making it ideal for space-constrained designs.
- Wide Operating Temperature Range: The component can operate over a temperature range of -55°C to 175°C, ensuring reliability in various environmental conditions.
- Low On-Resistance: With a maximum on-resistance of 170mOhm at 4.5A and 5V gate voltage, this MOSFET minimizes power losses during operation.
Applications
- Power Management Systems: Suitable for use in power supplies, DC-DC converters, and other power management circuits.
- Motor Control: Can be used in motor drive circuits due to its high current handling and low on-resistance.
- Automotive Systems: Applicable in automotive electronics such as battery management, lighting, and other high-power applications.
- Industrial Control Systems: Useful in industrial control circuits, including those requiring high reliability and performance.
Q & A
- What is the maximum continuous drain current of the NTD3055L170-001?
The maximum continuous drain current is 9A at 25°C.
- What is the drain to source voltage (Vdss) of this MOSFET?
The drain to source voltage (Vdss) is 60 V.
- What is the typical gate drive voltage for this component?
The typical gate drive voltage is 5V.
- What type of package does the NTD3055L170-001 come in?
The component comes in a TO-251-3 Short Leads, IPak, or TO-251AA package.
- What is the operating temperature range of this MOSFET?
The operating temperature range is -55°C to 175°C (TJ).
- What is the maximum on-resistance (Rds On) of the NTD3055L170-001?
The maximum on-resistance is 170mOhm at 4.5A and 5V gate voltage.
- What is the gate charge (Qg) of this MOSFET?
The gate charge (Qg) is 10 nC at 5 V.
- What is the input capacitance (Ciss) of the NTD3055L170-001?
The input capacitance (Ciss) is 275 pF at 25 V.
- What are some common applications of the NTD3055L170-001?
Common applications include power management systems, motor control, automotive systems, and industrial control systems.
- Where can I find the datasheet for the NTD3055L170-001?
The datasheet can be found on the onsemi website, as well as through distributors like Digi-Key, Mouser, and Avaq Semiconductor.
