MGSF1N03LT3
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onsemi MGSF1N03LT3

Manufacturer No:
MGSF1N03LT3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 1.6A SOT23-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The MGSF1N03LT3 is a single N-Channel small signal power MOSFET produced by onsemi. This miniature surface mount MOSFET is designed to minimize power loss and conserve energy, making it ideal for use in space-sensitive power management circuitry. The device features a low RDS(on) which provides higher efficiency and extends battery life in various applications.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS30V
Gate-to-Source VoltageVGS±20V
Maximum Drain CurrentID2.1A
Gate Threshold VoltageVGS(th)1.0 - 2.4V
Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 1.2 A)RDS(on)0.08 - 0.125Ω
Static Drain-to-Source On-Resistance (VGS = 4.5 V, ID = 1.0 A)RDS(on)0.10 - 0.145Ω
Input Capacitance (VDS = 5.0 V)Ciss140pF
Output Capacitance (VDS = 5.0 V)Coss100pF
Transfer Capacitance (VDG = 5.0 V)Crss40pF

Key Features

  • Low RDS(on) for higher efficiency and extended battery life.
  • Miniature SOT-23 surface mount package to save board space.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free and RoHS compliant.

Applications

  • DC-DC converters.
  • Power management in portable and battery-powered products.
  • Computers.
  • Printers.
  • PCMCIA cards.
  • Cellular and cordless telephones.

Q & A

  1. What is the maximum drain-to-source voltage of the MGSF1N03LT3 MOSFET?
    The maximum drain-to-source voltage is 30 V.
  2. What is the typical static drain-to-source on-resistance of the MGSF1N03LT3?
    The typical static drain-to-source on-resistance is 0.08 - 0.125 Ω at VGS = 10 V and ID = 1.2 A.
  3. What package type does the MGSF1N03LT3 come in?
    The MGSF1N03LT3 comes in a miniature SOT-23 surface mount package.
  4. Is the MGSF1N03LT3 Pb-Free and RoHS compliant?
    Yes, the MGSF1N03LT3 is Pb-Free and RoHS compliant.
  5. What are some typical applications of the MGSF1N03LT3?
    Typical applications include DC-DC converters, power management in portable and battery-powered products, computers, printers, PCMCIA cards, and cellular and cordless telephones.
  6. What is the gate threshold voltage range of the MGSF1N03LT3?
    The gate threshold voltage range is 1.0 - 2.4 V.
  7. What is the maximum drain current of the MGSF1N03LT3?
    The maximum drain current is 2.1 A.
  8. Is the MGSF1N03LT3 AEC-Q101 qualified?
    Yes, the MGSF1N03LT3 is AEC-Q101 qualified and PPAP capable.
  9. What are the input, output, and transfer capacitances of the MGSF1N03LT3?
    The input capacitance is 140 pF, the output capacitance is 100 pF, and the transfer capacitance is 40 pF.
  10. What is the turn-on delay time of the MGSF1N03LT3?
    The turn-on delay time is approximately 2.5 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):420mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
MGSF1N03LT1G
MGSF1N03LT1G
MOSFET N-CH 30V 1.6A SOT23-3
MGSF1N03LT3
MGSF1N03LT3
MOSFET N-CH 30V 1.6A SOT23-3
MGSF1N03LT3G
MGSF1N03LT3G
MOSFET N-CH 30V 1.6A SOT23-3

Similar Products

Part Number MGSF1N03LT3 MGSF1N03LT3G MGSF1N03LT1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) 1.6A (Ta) 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 100mOhm @ 1.2A, 10V 100mOhm @ 1.2A, 10V 100mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 5 V 140 pF @ 5 V 140 pF @ 5 V
FET Feature - - -
Power Dissipation (Max) 420mW (Ta) 420mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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