Overview
The MGSF1N03LT1 is a single N-Channel MOSFET produced by onsemi, designed for use in space-sensitive power management circuitry. This miniature surface mount MOSFET, packaged in a SOT-23 case, is optimized for minimal power loss and energy conservation. It is particularly suited for applications in dc-dc converters and power management systems of portable and battery-powered devices such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 2.1 | A |
| Continuous Drain Current (TA = 85°C) | ID | 1.5 | A |
| Power Dissipation (TA = 25°C) | PD | 0.69 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 6.0 | A |
| ESD Capability (HBM Class 0) | ESD | 125 | V |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to 150 | °C |
| Gate Threshold Voltage | VGS(th) | 1.0 to 2.4 | Vdc |
| Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 1.2 A) | rDS(on) | 0.08 to 0.145 | Ω |
Key Features
- Low RDS(on): Provides higher efficiency and extends battery life.
- Miniature SOT-23 Surface Mount Package: Saves board space.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
The MGSF1N03LT1 is ideal for use in dc-dc converters and power management systems of portable and battery-powered products. Typical applications include:
- Computers
- Printers
- PCMCIA cards
- Cellular and cordless telephones
Q & A
- What is the maximum drain-to-source voltage of the MGSF1N03LT1?
The maximum drain-to-source voltage (VDSS) is 30 V. - What is the continuous drain current at 25°C?
The continuous drain current at 25°C is 2.1 A. - What is the power dissipation at 25°C?
The power dissipation at 25°C is 0.69 W. - What is the ESD capability of the MGSF1N03LT1?
The ESD capability is 125 V (HBM Class 0). - What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to 150°C. - What is the gate threshold voltage range?
The gate threshold voltage range is 1.0 to 2.4 Vdc. - What is the typical on-resistance at VGS = 10 Vdc and ID = 1.2 A?
The typical on-resistance is 0.08 to 0.145 Ω. - Is the MGSF1N03LT1 Pb-Free and RoHS compliant?
Yes, the device is Pb-Free and RoHS compliant. - What are the typical applications of the MGSF1N03LT1?
Typical applications include dc-dc converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, and cellular and cordless telephones. - Is the MGSF1N03LT1 AEC-Q101 qualified?
Yes, the MVGSF1N03LT1 is AEC-Q101 qualified and PPAP capable.
