Overview
The FDA24N50 is a high-voltage N-Channel MOSFET from onsemi, part of their UniFET™ and FRFET® family. This device is designed using planar stripe and DMOS technology to reduce on-state resistance and enhance switching performance. It also features improved avalanche energy strength and better reverse recovery performance of the body diode. The FDA24N50 is suitable for various high-power applications, including switching power converters, power factor correction (PFC), and more.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 500 | V |
| Gate to Source Voltage (VGSS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 24 | A |
| Continuous Drain Current (ID) at TC = 100°C | 14 | A |
| Pulsed Drain Current (IDM) | 96 | A |
| Single Pulsed Avalanche Energy (EAS) | 1872 | mJ |
| Power Dissipation (PD) at TC = 25°C | 270 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Maximum Lead Temperature for Soldering | 300 | °C |
| Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 12 A | 0.166 - 0.200 | mΩ |
| Total Gate Charge at 10 V (Qg(tot)) | 65 - 85 | nC |
| Reverse Recovery Time (trr) | 264 | ns |
Key Features
- Low on-state resistance (RDS(on) = 166 mΩ @ VGS = 10 V, ID = 12 A)
- Low gate charge (Typ. 65 nC)
- Low Crss (Typ. 32 pF)
- 100% Avalanche tested
- Improved dv/dt capability
- Enhanced reverse recovery performance of the body diode (trr < 100 ns)
- RoHS compliant
Applications
- Power Factor Correction (PFC)
- Flat Panel Display (FPD) TV power
- ATX power supplies
- Electronic lamp ballasts
- PDP TV
- Uninterruptible Power Supply (UPS)
- AC-DC Power Supply
Q & A
- What is the maximum drain to source voltage of the FDA24N50 MOSFET?
The maximum drain to source voltage (VDS) is 500 V.
- What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current (ID) is 24 A at 25°C and 14 A at 100°C.
- What is the typical on-state resistance of the FDA24N50?
The typical on-state resistance (RDS(on)) is 166 mΩ at VGS = 10 V and ID = 12 A.
- What are the key features of the body diode in the FDA24N50?
The body diode has enhanced reverse recovery performance with a trr of less than 100 ns and a reverse dv/dt immunity of 15 V/ns.
- Is the FDA24N50 RoHS compliant?
- What are some typical applications of the FDA24N50 MOSFET?
Typical applications include power factor correction (PFC), flat panel display (FPD) TV power, ATX power supplies, electronic lamp ballasts, PDP TV, and uninterruptible power supplies (UPS).
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300°C.
- What is the operating and storage temperature range of the FDA24N50?
The operating and storage temperature range is -55 to +150°C.
- What is the typical total gate charge at 10 V?
The typical total gate charge (Qg(tot)) is 65 nC.
- Is the FDA24N50 suitable for high-power switching applications?
