FDA24N50F
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onsemi FDA24N50F

Manufacturer No:
FDA24N50F
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 500V 24A TO3PN
Delivery:
Payment:
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Product Introduction

Overview

The FDA24N50F is a high-performance N-Channel MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This UniFET™ and FRFET® technology-based MOSFET is designed to offer superior switching performance, reduced on-state resistance, and enhanced avalanche energy strength. It is packaged in a TO-3PN through-hole configuration, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)500 V
Continuous Drain Current (Id)24 A (at Tc)
Maximum Power Dissipation (Pd)270 W (at Tc)
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Channel ModeEnhancement
Package TypeTO-3PN (Through Hole)
Maximum Drain Current (Idm)96 A

Key Features

  • Low on-state resistance for efficient power handling
  • Enhanced switching performance for high-frequency applications
  • High avalanche energy strength for robust operation
  • TO-3PN package for reliable and durable through-hole mounting
  • Wide operating temperature range from -55°C to +150°C

Applications

The FDA24N50F is suitable for various high-power applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • High-frequency switching circuits
  • Aerospace and automotive systems requiring high reliability
  • Industrial control and automation systems

Q & A

  1. What is the voltage rating of the FDA24N50F MOSFET?
    The voltage rating of the FDA24N50F MOSFET is 500 V.
  2. What is the continuous drain current of the FDA24N50F?
    The continuous drain current of the FDA24N50F is 24 A at Tc.
  3. What is the maximum power dissipation of the FDA24N50F?
    The maximum power dissipation of the FDA24N50F is 270 W at Tc.
  4. What is the operating temperature range of the FDA24N50F?
    The operating temperature range of the FDA24N50F is from -55°C to +150°C.
  5. What type of package does the FDA24N50F use?
    The FDA24N50F uses a TO-3PN through-hole package.
  6. What are some typical applications of the FDA24N50F?
    The FDA24N50F is typically used in power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, and industrial control systems.
  7. What technology is used in the FDA24N50F MOSFET?
    The FDA24N50F MOSFET uses UniFET™ and FRFET® technology.
  8. What is the maximum drain current (Idm) of the FDA24N50F?
    The maximum drain current (Idm) of the FDA24N50F is 96 A.
  9. Is the FDA24N50F suitable for high-frequency applications?
    Yes, the FDA24N50F is designed for enhanced switching performance, making it suitable for high-frequency applications.
  10. What is the channel mode of the FDA24N50F MOSFET?
    The channel mode of the FDA24N50F MOSFET is enhancement.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4310 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):270W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number FDA24N50F FDA28N50F FDA20N50F FDA24N40F FDA24N50
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Last Time Buy Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 400 V 500 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 28A (Tc) 22A (Tc) 23A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 12A, 10V 175mOhm @ 14A, 10V 260mOhm @ 11A, 10V 190mOhm @ 11.5A, 10V 190mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 105 nC @ 10 V 65 nC @ 10 V 60 nC @ 10 V 85 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4310 pF @ 25 V 5387 pF @ 25 V 3390 pF @ 25 V 3030 pF @ 25 V 4150 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 270W (Tc) 310W (Tc) 388W (Tc) 235W (Tc) 270W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-3PN TO-3PN TO-3PN TO-3PN TO-3PN
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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