FDA24N40F
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onsemi FDA24N40F

Manufacturer No:
FDA24N40F
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 400V 23A TO3PN
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Product Introduction

Overview

The FDA24N40F is an N-Channel MOSFET produced by onsemi, formerly Fairchild Semiconductor. This high-voltage MOSFET is designed to offer superior performance in various power management applications. It is tailored to reduce on-state resistance, enhance switching performance, and provide higher avalanche energy strength. The device is part of onsemi's portfolio of power MOSFETs, known for their reliability and efficiency in handling high voltage and current requirements.

Key Specifications

ParameterValue
Voltage Rating (Vds)400 V
Current Rating (Id)23 A
On-State Resistance (Rds(on))0.19 Ω
Gate Threshold Voltage (Vgs(th))2-4 V
Package Type3-Pin TO-3PN

Key Features

  • Low on-state resistance (Rds(on)) of 0.19 Ω, enhancing efficiency in power management.
  • High voltage rating of 400 V, suitable for applications requiring high voltage handling.
  • High current rating of 23 A, making it suitable for high-power applications.
  • Improved switching performance and higher avalanche energy strength.
  • Dual protection with temperature and current limit, ensuring robust operation.

Applications

The FDA24N40F is versatile and can be used in a variety of applications, including:

  • Motor driver applications, where its low on-state resistance and high current handling are beneficial.
  • Power supplies and DC-DC converters, where high efficiency and reliability are crucial.
  • Industrial control systems, requiring robust and efficient power management.
  • Automotive systems, where high voltage and current handling are necessary.

Q & A

  1. What is the voltage rating of the FDA24N40F MOSFET?
    The voltage rating of the FDA24N40F MOSFET is 400 V.
  2. What is the current rating of the FDA24N40F MOSFET?
    The current rating of the FDA24N40F MOSFET is 23 A.
  3. What is the on-state resistance (Rds(on)) of the FDA24N40F MOSFET?
    The on-state resistance (Rds(on)) of the FDA24N40F MOSFET is 0.19 Ω.
  4. What package type is the FDA24N40F MOSFET available in?
    The FDA24N40F MOSFET is available in a 3-Pin TO-3PN package.
  5. Is the FDA24N40F MOSFET still in production?
    No, the FDA24N40F MOSFET is obsolete and not in production.
  6. What are some key applications of the FDA24N40F MOSFET?
    The FDA24N40F MOSFET is suitable for motor driver applications, power supplies, DC-DC converters, industrial control systems, and automotive systems.
  7. Does the FDA24N40F MOSFET have any built-in protection features?
    Yes, the FDA24N40F MOSFET has dual protection with temperature and current limit.
  8. Who is the manufacturer of the FDA24N40F MOSFET?
    The FDA24N40F MOSFET is manufactured by onsemi, formerly Fairchild Semiconductor.
  9. Where can I find detailed specifications for the FDA24N40F MOSFET?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  10. What are the benefits of the low on-state resistance in the FDA24N40F MOSFET?
    The low on-state resistance enhances efficiency in power management by reducing power losses during operation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3030 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):235W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number FDA24N40F FDA24N50F
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 500 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 11.5A, 10V 200mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 85 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3030 pF @ 25 V 4310 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 235W (Tc) 270W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3PN TO-3PN
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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