STL62P3LLH6
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STMicroelectronics STL62P3LLH6

Manufacturer No:
STL62P3LLH6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 62A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL62P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ H6 technology. This device features a new trench gate structure, which enhances its performance and efficiency. The STL62P3LLH6 is designed to provide high current handling and low on-resistance, making it suitable for a variety of power management applications.

Key Specifications

Parameter Value
Drain-Source Voltage (VDS) -30 V
On-Resistance (RDS(on)) 10.5 mΩ (max)
Continuous Drain Current (ID) -62 A
Package Type PowerFLAT 3.3x3.3

Key Features

  • Very low on-resistance (RDS(on)) of 10.5 mΩ (max)
  • High continuous drain current (ID) of -62 A
  • Advanced STripFET™ H6 technology with a new trench gate structure
  • 100% avalanche tested for reliability
  • P-channel configuration for versatile application use

Applications

The STL62P3LLH6 is ideal for various power management applications, including:

  • Flyback converters
  • LED lighting systems
  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Other high-current, low-voltage power management scenarios

Q & A

  1. What is the drain-source voltage rating of the STL62P3LLH6?

    The drain-source voltage (VDS) rating is -30 V.

  2. What is the typical on-resistance of the STL62P3LLH6?

    The typical on-resistance (RDS(on)) is 10.5 mΩ (max).

  3. What is the continuous drain current rating of the STL62P3LLH6?

    The continuous drain current (ID) rating is -62 A.

  4. What technology is used in the STL62P3LLH6?

    The STL62P3LLH6 uses the advanced STripFET™ H6 technology with a new trench gate structure.

  5. What package type is the STL62P3LLH6 available in?

    The STL62P3LLH6 is available in the PowerFLAT 3.3x3.3 package.

  6. Is the STL62P3LLH6 100% avalanche tested?

    Yes, the STL62P3LLH6 is 100% avalanche tested for reliability.

  7. What are some common applications for the STL62P3LLH6?

    Common applications include flyback converters, LED lighting systems, power supplies, DC-DC converters, and motor control systems.

  8. Why is the STL62P3LLH6 suitable for high-current applications?

    The STL62P3LLH6 is suitable for high-current applications due to its low on-resistance and high continuous drain current rating.

  9. Where can I find detailed specifications for the STL62P3LLH6?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other authorized distributors like Mouser Electronics.

  10. What is the significance of the trench gate structure in the STL62P3LLH6?

    The trench gate structure enhances the device's performance by reducing on-resistance and improving current handling capabilities.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:62A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL62P3LLH6 STL6P3LLH6
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 7A, 10V 30mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min) 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 4.5 V 12 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3350 pF @ 25 V 1450 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 100W (Tc) 2.9W (Tc)
Operating Temperature 175°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (3.3x3.3)
Package / Case 8-PowerVDFN 8-PowerVDFN

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