Overview
The STL9P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ H6 technology. This device is housed in a PowerFLAT™ 3.3x3.3 package, which is designed to optimize thermal performance and reduce the overall footprint. The STL9P3LLH6 is characterized by its very low on-resistance, low gate charge, and high avalanche ruggedness, making it suitable for a variety of high-performance applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| FET Type | P-Ch | |
| No of Channels | 1 | |
| Drain-to-Source Voltage (Vdss) | -30 | V |
| Drain-Source On Resistance-Max (RDS(on)) | 15 | mΩ |
| Rated Power Dissipation | 3 | W |
| Gate Charge (Qg) | 24 | nC |
| Gate-Source Voltage-Max (Vgss) | ±20 | V |
| Drain Current (ID) | -9 | A |
| Turn-on Delay Time | 13.2 | ns |
| Turn-off Delay Time | 50 | ns |
| Rise Time | 93 | ns |
| Fall Time | 18 | ns |
| Operating Temperature Range | -55°C to +150°C | |
| Gate Source Threshold | 1 | V |
| Input Capacitance | 2615 | pF |
| Package Style | POWER FLAT | |
| Mounting Method | Surface Mount |
Key Features
- Very Low On-Resistance: The STL9P3LLH6 features a maximum drain-source on-resistance (RDS(on)) of 15 mΩ, which minimizes energy losses and enhances overall efficiency.
- Low Gate Charge: With a total gate charge (Qg) of 24 nC, this MOSFET requires less gate drive power, making it suitable for high-frequency applications.
- High Avalanche Ruggedness: The device is designed to withstand high avalanche currents, ensuring reliability in demanding environments.
- Advanced STripFET™ H6 Technology: This technology incorporates a new trench gate structure, which improves the MOSFET's performance and reduces thermal resistance.
- Compact PowerFLAT™ 3.3x3.3 Package: The package is optimized for thermal performance and space efficiency, making it ideal for compact designs.
Applications
- Switching Applications: The STL9P3LLH6 is well-suited for various switching applications due to its low on-resistance, fast switching times, and high avalanche ruggedness.
- Power Management Systems: It can be used in power management systems where high efficiency and reliability are critical.
- Automotive and Industrial Systems: The device's robustness and wide operating temperature range make it suitable for use in automotive and industrial environments.
- High-Performance Electronic Devices: It is also applicable in high-performance electronic devices requiring low power loss and high switching speeds.
Q & A
- What is the maximum drain-to-source voltage (Vdss) of the STL9P3LLH6?
The maximum drain-to-source voltage (Vdss) is -30 V.
- What is the typical on-resistance (RDS(on)) of the STL9P3LLH6?
The maximum on-resistance (RDS(on)) is 15 mΩ.
- What is the maximum continuous drain current (ID) at 25°C?
The maximum continuous drain current (ID) at 25°C is -9 A.
- What is the gate-source voltage range (Vgss) for the STL9P3LLH6?
The gate-source voltage range (Vgss) is ±20 V.
- What is the operating temperature range of the STL9P3LLH6?
The operating temperature range is -55°C to +150°C.
- What package style is the STL9P3LLH6 available in?
The STL9P3LLH6 is available in a PowerFLAT™ 3.3x3.3 package.
- What is the mounting method for the STL9P3LLH6?
The mounting method is Surface Mount.
- What are the key features of the STripFET™ H6 technology used in the STL9P3LLH6?
The STripFET™ H6 technology features very low on-resistance, low gate charge, and high avalanche ruggedness.
- In what types of applications is the STL9P3LLH6 commonly used?
The STL9P3LLH6 is commonly used in switching applications, power management systems, automotive and industrial systems, and high-performance electronic devices.
- What is the total gate charge (Qg) of the STL9P3LLH6?
The total gate charge (Qg) is 24 nC.
