STL4P3LLH6
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STMicroelectronics STL4P3LLH6

Manufacturer No:
STL4P3LLH6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 4A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL4P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET H6 technology. This device features a new trench gate structure, which significantly enhances its performance. It is designed for high-efficiency applications, offering low on-resistance and high current handling capabilities.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Drain Current)4 A
RDS(on) (On-Resistance)0.048 Ω (typ.)
PD (Power Dissipation)2.4 W (at Ta)
PackagePowerFlat™ (2x2), Surface Mount
Operating Temperature-55°C to 150°C

Key Features

  • Advanced STripFET H6 technology with a new trench gate structure for low on-resistance.
  • High current handling capability of up to 4 A.
  • Low RDS(on) of 0.048 Ω (typ.) for high efficiency.
  • Surface mount PowerFlat™ (2x2) package for compact design.
  • Wide operating temperature range from -55°C to 150°C.

Applications

The STL4P3LLH6 is suitable for various high-efficiency applications, including but not limited to:

  • Power management systems.
  • DC-DC converters.
  • Motor control circuits.
  • Audio amplifiers.
  • General-purpose switching applications.

Q & A

  1. What is the drain-source voltage rating of the STL4P3LLH6?
    The drain-source voltage rating is 30 V.
  2. What is the typical on-resistance of the STL4P3LLH6?
    The typical on-resistance is 0.048 Ω.
  3. What is the maximum drain current of the STL4P3LLH6?
    The maximum drain current is 4 A.
  4. What is the package type of the STL4P3LLH6?
    The package type is PowerFlat™ (2x2), surface mount.
  5. What is the operating temperature range of the STL4P3LLH6?
    The operating temperature range is from -55°C to 150°C.
  6. What technology is used in the STL4P3LLH6?
    The STL4P3LLH6 uses the STripFET H6 technology.
  7. What are some common applications for the STL4P3LLH6?
    Common applications include power management systems, DC-DC converters, motor control circuits, audio amplifiers, and general-purpose switching applications.
  8. What is the power dissipation rating of the STL4P3LLH6 at ambient temperature?
    The power dissipation rating at ambient temperature is 2.4 W.
  9. Is the STL4P3LLH6 suitable for high-efficiency applications?
    Yes, the STL4P3LLH6 is designed for high-efficiency applications due to its low on-resistance and high current handling capabilities.
  10. Where can I find more detailed specifications for the STL4P3LLH6?
    You can find detailed specifications on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Element14.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:56mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:639 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (2x2)
Package / Case:6-PowerWDFN
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Similar Products

Part Number STL4P3LLH6 STL9P3LLH6 STL6P3LLH6 STL45P3LLH6
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 9A (Tc) 6A (Tc) 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 56mOhm @ 2A, 10V 15mOhm @ 4.5A, 10V 30mOhm @ 3A, 10V 13mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 1V @ 250µA 1V @ 250µA (Min) 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 24 nC @ 4.5 V 12 nC @ 4.5 V 24 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 639 pF @ 25 V 2615 pF @ 25 V 1450 pF @ 25 V 2615 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2.4W (Ta) 3W (Ta) 2.9W (Tc) 4.8W (Ta), 75W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (2x2) PowerFlat™ (3.3x3.3) PowerFlat™ (3.3x3.3) PowerFlat™ (5x6)
Package / Case 6-PowerWDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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