STL45P3LLH6
  • Share:

STMicroelectronics STL45P3LLH6

Manufacturer No:
STL45P3LLH6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 45A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL45P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ H6 technology. This device features a new trench gate structure, which significantly enhances its performance. It is packaged in a PowerFLAT™ 5x6 package, designed to optimize thermal and electrical performance. The STL45P3LLH6 is characterized by its very low on-resistance, low gate charge, and high avalanche ruggedness, making it suitable for a variety of high-power switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)-30V
Gate-Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25 °C-45A
Continuous Drain Current (ID) at TC = 100 °C-34A
Pulsed Drain Current (IDM)-180A
Total Dissipation at Tc = 25 °C75W
Static Drain-Source On-Resistance (RDS(on)) at VGS = -10 V, ID = -6 A11-13mΩ
Gate Threshold Voltage (VGS(th))-1V
Input Capacitance (Ciss)2615pF
Output Capacitance (Coss)340pF
Reverse Transfer Capacitance (Crss)235pF
Total Gate Charge (Qg)24nC

Key Features

  • Very low on-resistance (RDS(on)) of 11-13 mΩ at VGS = -10 V, ID = -6 A
  • Very low gate charge and low gate drive power loss
  • High avalanche ruggedness
  • Low forward on voltage of the source-drain diode
  • High thermal performance due to the PowerFLAT™ 5x6 package

Applications

The STL45P3LLH6 is designed for high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial and automotive power systems
  • High-frequency switching circuits

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STL45P3LLH6? The maximum drain-source voltage is -30 V.
  2. What is the typical on-resistance (RDS(on)) of the STL45P3LLH6? The typical on-resistance is 13 mΩ at VGS = -10 V, ID = -6 A.
  3. What is the maximum continuous drain current (ID) at TC = 25 °C? The maximum continuous drain current is -45 A.
  4. What is the thermal resistance junction-case (Rthj-case) of the STL45P3LLH6? The thermal resistance junction-case is 2.00 °C/W.
  5. What package type is used for the STL45P3LLH6? The STL45P3LLH6 is packaged in a PowerFLAT™ 5x6 package.
  6. What are the key features of the STL45P3LLH6? Key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
  7. What are some typical applications for the STL45P3LLH6? Typical applications include power supplies, motor control systems, industrial and automotive power systems, and high-frequency switching circuits.
  8. What is the gate threshold voltage (VGS(th)) of the STL45P3LLH6? The gate threshold voltage is approximately -1 V.
  9. What is the total gate charge (Qg) of the STL45P3LLH6? The total gate charge is 24 nC.
  10. What is the storage temperature range for the STL45P3LLH6? The storage temperature range is -55 to 175 °C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2615 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4.8W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$0.74
805

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL45P3LLH6 STL4P3LLH6
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 6A, 10V 56mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V 6 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2615 pF @ 25 V 639 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 4.8W (Ta), 75W (Tc) 2.4W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (2x2)
Package / Case 8-PowerVDFN 6-PowerWDFN

Related Product By Categories

NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

SM15T75AY
SM15T75AY
STMicroelectronics
TVS DIODE 64.1VWM 134VC SMC
SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STM32L011F3P6TR
STM32L011F3P6TR
STMicroelectronics
IC MCU 32BIT 8KB FLASH 20TSSOP
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
DSM2190F4V-15T6
DSM2190F4V-15T6
STMicroelectronics
IC FLASH 2MBIT PARALLEL 52PQFP
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK