onsemi FDMS86252

Manufacturer No:: FDMS86252
Manufacturer:: onsemi
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 150V 4.6A/16A 8PQFN
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Product Introduction

Overview

The FDMS86252 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This MOSFET is fabricated using an advanced PowerTrench® process that incorporates Shielded Gate technology, optimized for low on-state resistance while maintaining superior switching performance. It is suitable for a wide range of general usage applications due to its robust design and high efficiency.

Key Specifications

Parameter	Value	Units
Drain to Source Voltage (V_DS)	150	V
Gate to Source Voltage (V_GS)	±20	V
Continuous Drain Current (I_D) at T_C = 25°C	16	A
Maximum Power Dissipation (P_D) at T_C = 25°C	69	W
Maximum On-State Resistance (r_DS(on)) at V_GS = 10 V, I_D = 4.6 A	51	mΩ
Maximum On-State Resistance (r_DS(on)) at V_GS = 6 V, I_D = 3.9 A	70	mΩ
Gate to Source Threshold Voltage (V_GS(th))	1 to 3	V
Thermal Resistance, Junction to Case (R_θJC)	2.5	°C/W
Thermal Resistance, Junction to Ambient (R_θJA)	50	°C/W
Operating and Storage Junction Temperature Range	-55 to +150	°C

Key Features

Shielded Gate MOSFET Technology for improved performance and reliability.
Advanced package and silicon combination for low r_DS(on) and high efficiency.
Next generation enhanced body diode technology, engineered for soft recovery.
MSL1 robust package design for enhanced reliability.
100% UIL tested for quality assurance.
RoHS Compliant, ensuring environmental sustainability.

Applications

OringFET / Load Switching
Synchronous Rectification
DC-DC Conversion

Q & A

What is the maximum drain to source voltage of the FDMS86252 MOSFET?
The maximum drain to source voltage (V_DS) is 150 V.
What is the continuous drain current rating at T_C = 25°C?
The continuous drain current (I_D) is 16 A at T_C = 25°C.
What is the maximum on-state resistance at V_GS = 10 V and I_D = 4.6 A?
The maximum on-state resistance (r_DS(on)) is 51 mΩ at V_GS = 10 V and I_D = 4.6 A.
What is the thermal resistance from junction to case (R_θJC)?
The thermal resistance from junction to case (R_θJC) is 2.5 °C/W.
Is the FDMS86252 MOSFET RoHS compliant?
Yes, the FDMS86252 MOSFET is RoHS compliant.
What are some typical applications of the FDMS86252 MOSFET?
Typical applications include OringFET / Load Switching, Synchronous Rectification, and DC-DC Conversion.
What is the gate to source threshold voltage range?
The gate to source threshold voltage (V_GS(th)) range is from 1 to 3 V.
What is the operating and storage junction temperature range?
The operating and storage junction temperature range is -55 to +150 °C.
Is the FDMS86252 MOSFET 100% UIL tested?
Yes, the FDMS86252 MOSFET is 100% UIL tested.
What is the package type of the FDMS86252 MOSFET?
The package type is PQFN-8.

In Stock

UnitPrice: $2.46

Quantity: 118

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Part Number	FDMS86252	FDMS86255	FDMS86252L	FDMS86152	FDMS86202	FDMS8622	FDMS86250
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Active	Active	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V	150 V	150 V	100 V	120 V	100 V	150 V
Current - Continuous Drain (Id) @ 25°C	4.6A (Ta), 16A (Tc)	10A (Ta), 45A (Tc)	4.4A (Ta)	14A (Ta), 45A (Tc)	13.5A (Ta)	4.8A (Ta), 16.5A (Tc)	6.7A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	6V, 10V	4.5V, 10V	6V, 10V	6V, 10V	6V, 10V	6V, 10V
Rds On (Max) @ Id, Vgs	51mOhm @ 4.6A, 10V	12.4mOhm @ 10A, 10V	56mOhm @ 4.4A, 10V	6mOhm @ 14A, 10V	7.2mOhm @ 13.5A, 10V	56mOhm @ 4.8A, 10V	25mOhm @ 6.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	3V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V	63 nC @ 10 V	21 nC @ 10 V	50 nC @ 10 V	64 nC @ 10 V	7 nC @ 10 V	36 nC @ 10 V
Vgs (Max)	±20V	±20V	±20V	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	905 pF @ 75 V	4480 pF @ 75 V	1335 pF @ 75 V	3370 pF @ 50 V	4250 pF @ 60 V	400 pF @ 50 V	2330 pF @ 75 V
FET Feature	-	-	-	-	-	-	-
Power Dissipation (Max)	2.5W (Ta), 69W (Tc)	2.7W (Ta), 113W (Tc)	2.5W (Ta), 50W (Tc)	2.7W (Ta), 125W (Tc)	2.7W (Ta), 156W (Tc)	2.5W (Ta), 31W (Tc)	2.5W (Ta), 96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	8-PQFN (5x6)	8-PQFN (5x6)	8-PQFN (5x6)	8-PQFN (5x6)	8-PQFN (5x6)	8-PQFN (5x6)	8-PQFN (5x6)
Package / Case	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	150 V
Current - Continuous Drain (Id) @ 25°C:	4.6A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	51mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	905 pF @ 75 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 69W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-PQFN (5x6)
Package / Case:	8-PowerTDFN

onsemi FDMS86252

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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