Overview
The FDMS86252 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This MOSFET is fabricated using an advanced PowerTrench® process that incorporates Shielded Gate technology, optimized for low on-state resistance while maintaining superior switching performance. It is suitable for a wide range of general usage applications due to its robust design and high efficiency.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Drain to Source Voltage (VDS) | 150 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 16 | A |
| Maximum Power Dissipation (PD) at TC = 25°C | 69 | W |
| Maximum On-State Resistance (rDS(on)) at VGS = 10 V, ID = 4.6 A | 51 | mΩ |
| Maximum On-State Resistance (rDS(on)) at VGS = 6 V, ID = 3.9 A | 70 | mΩ |
| Gate to Source Threshold Voltage (VGS(th)) | 1 to 3 | V |
| Thermal Resistance, Junction to Case (RθJC) | 2.5 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 50 | °C/W |
| Operating and Storage Junction Temperature Range | -55 to +150 | °C |
Key Features
- Shielded Gate MOSFET Technology for improved performance and reliability.
- Advanced package and silicon combination for low rDS(on) and high efficiency.
- Next generation enhanced body diode technology, engineered for soft recovery.
- MSL1 robust package design for enhanced reliability.
- 100% UIL tested for quality assurance.
- RoHS Compliant, ensuring environmental sustainability.
Applications
- OringFET / Load Switching
- Synchronous Rectification
- DC-DC Conversion
Q & A
- What is the maximum drain to source voltage of the FDMS86252 MOSFET?
The maximum drain to source voltage (VDS) is 150 V.
- What is the continuous drain current rating at TC = 25°C?
The continuous drain current (ID) is 16 A at TC = 25°C.
- What is the maximum on-state resistance at VGS = 10 V and ID = 4.6 A?
The maximum on-state resistance (rDS(on)) is 51 mΩ at VGS = 10 V and ID = 4.6 A.
- What is the thermal resistance from junction to case (RθJC)?
The thermal resistance from junction to case (RθJC) is 2.5 °C/W.
- Is the FDMS86252 MOSFET RoHS compliant?
Yes, the FDMS86252 MOSFET is RoHS compliant.
- What are some typical applications of the FDMS86252 MOSFET?
Typical applications include OringFET / Load Switching, Synchronous Rectification, and DC-DC Conversion.
- What is the gate to source threshold voltage range?
The gate to source threshold voltage (VGS(th)) range is from 1 to 3 V.
- What is the operating and storage junction temperature range?
The operating and storage junction temperature range is -55 to +150 °C.
- Is the FDMS86252 MOSFET 100% UIL tested?
Yes, the FDMS86252 MOSFET is 100% UIL tested.
- What is the package type of the FDMS86252 MOSFET?
The package type is PQFN-8.
