FDMS86252
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onsemi FDMS86252

Manufacturer No:
FDMS86252
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 4.6A/16A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86252 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This MOSFET is fabricated using an advanced PowerTrench® process that incorporates Shielded Gate technology, optimized for low on-state resistance while maintaining superior switching performance. It is suitable for a wide range of general usage applications due to its robust design and high efficiency.

Key Specifications

Parameter Value Units
Drain to Source Voltage (VDS) 150 V
Gate to Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 16 A
Maximum Power Dissipation (PD) at TC = 25°C 69 W
Maximum On-State Resistance (rDS(on)) at VGS = 10 V, ID = 4.6 A 51
Maximum On-State Resistance (rDS(on)) at VGS = 6 V, ID = 3.9 A 70
Gate to Source Threshold Voltage (VGS(th)) 1 to 3 V
Thermal Resistance, Junction to Case (RθJC) 2.5 °C/W
Thermal Resistance, Junction to Ambient (RθJA) 50 °C/W
Operating and Storage Junction Temperature Range -55 to +150 °C

Key Features

  • Shielded Gate MOSFET Technology for improved performance and reliability.
  • Advanced package and silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design for enhanced reliability.
  • 100% UIL tested for quality assurance.
  • RoHS Compliant, ensuring environmental sustainability.

Applications

  • OringFET / Load Switching
  • Synchronous Rectification
  • DC-DC Conversion

Q & A

  1. What is the maximum drain to source voltage of the FDMS86252 MOSFET?

    The maximum drain to source voltage (VDS) is 150 V.

  2. What is the continuous drain current rating at TC = 25°C?

    The continuous drain current (ID) is 16 A at TC = 25°C.

  3. What is the maximum on-state resistance at VGS = 10 V and ID = 4.6 A?

    The maximum on-state resistance (rDS(on)) is 51 mΩ at VGS = 10 V and ID = 4.6 A.

  4. What is the thermal resistance from junction to case (RθJC)?

    The thermal resistance from junction to case (RθJC) is 2.5 °C/W.

  5. Is the FDMS86252 MOSFET RoHS compliant?

    Yes, the FDMS86252 MOSFET is RoHS compliant.

  6. What are some typical applications of the FDMS86252 MOSFET?

    Typical applications include OringFET / Load Switching, Synchronous Rectification, and DC-DC Conversion.

  7. What is the gate to source threshold voltage range?

    The gate to source threshold voltage (VGS(th)) range is from 1 to 3 V.

  8. What is the operating and storage junction temperature range?

    The operating and storage junction temperature range is -55 to +150 °C.

  9. Is the FDMS86252 MOSFET 100% UIL tested?

    Yes, the FDMS86252 MOSFET is 100% UIL tested.

  10. What is the package type of the FDMS86252 MOSFET?

    The package type is PQFN-8.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:4.6A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:51mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:905 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number FDMS86252 FDMS86255 FDMS86252L FDMS86152 FDMS86202 FDMS8622 FDMS86250
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 150 V 100 V 120 V 100 V 150 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta), 16A (Tc) 10A (Ta), 45A (Tc) 4.4A (Ta) 14A (Ta), 45A (Tc) 13.5A (Ta) 4.8A (Ta), 16.5A (Tc) 6.7A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 4.5V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 51mOhm @ 4.6A, 10V 12.4mOhm @ 10A, 10V 56mOhm @ 4.4A, 10V 6mOhm @ 14A, 10V 7.2mOhm @ 13.5A, 10V 56mOhm @ 4.8A, 10V 25mOhm @ 6.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 3V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 63 nC @ 10 V 21 nC @ 10 V 50 nC @ 10 V 64 nC @ 10 V 7 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 905 pF @ 75 V 4480 pF @ 75 V 1335 pF @ 75 V 3370 pF @ 50 V 4250 pF @ 60 V 400 pF @ 50 V 2330 pF @ 75 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 69W (Tc) 2.7W (Ta), 113W (Tc) 2.5W (Ta), 50W (Tc) 2.7W (Ta), 125W (Tc) 2.7W (Ta), 156W (Tc) 2.5W (Ta), 31W (Tc) 2.5W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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