Overview
The FDMS86255 is an N-Channel, Shielded Gate MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology enhances the on-state resistance while maintaining superior switching performance. The device is designed for high efficiency and features next-generation enhanced body diode technology for soft recovery. It is packaged in a robust PQFN8 5x6, 1.27P case, ensuring low thermal resistance and high reliability.
Key Specifications
| Parameter | Rating | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 150 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 62 | A |
| Pulsed Drain Current (ID) | 271 | A |
| Single Pulse Avalanche Energy (EAS) | 541 | mJ |
| Power Dissipation (PD) at TC = 25°C | 113 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | −55 to +150 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 1.1 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 45 | °C/W |
| Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 10 A | 12.4 | mΩ |
| Static Drain to Source On Resistance (RDS(on)) at VGS = 6 V, ID = 8 A | 15.5 | mΩ |
Key Features
- Shielded Gate MOSFET Technology
- Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
- Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS Compliant and Halogen Free
Applications
- OringFET / Load Switching
- Synchronous Rectification
- DC-DC Conversion
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS86255 MOSFET?
The maximum drain to source voltage (VDS) is 150 V.
- What is the continuous drain current (ID) rating at TC = 25°C?
The continuous drain current (ID) rating at TC = 25°C is 62 A.
- What is the thermal resistance, junction to case (RθJC), of the FDMS86255?
The thermal resistance, junction to case (RθJC), is 1.1 °C/W.
- Is the FDMS86255 RoHS compliant and halogen free?
- What are the typical applications of the FDMS86255 MOSFET?
The typical applications include OringFET / Load Switching, Synchronous Rectification, and DC-DC Conversion.
- What is the maximum gate to source voltage (VGS) rating?
The maximum gate to source voltage (VGS) rating is ±20 V.
- What is the static drain to source on resistance (RDS(on)) at VGS = 10 V and ID = 10 A?
The static drain to source on resistance (RDS(on)) at VGS = 10 V and ID = 10 A is 12.4 mΩ.
- What is the single pulse avalanche energy (EAS) rating of the FDMS86255?
The single pulse avalanche energy (EAS) rating is 541 mJ.
- What is the operating and storage junction temperature range (TJ, TSTG) of the FDMS86255?
The operating and storage junction temperature range (TJ, TSTG) is −55 to +150 °C.
- Is the FDMS86255 tested for UIL (Unclamped Inductive Load)?
