Overview
The FDMS86250 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi (formerly Fairchild Semiconductor). This device is designed to offer high efficiency and superior switching performance, making it suitable for a variety of power management applications. The MOSFET features advanced PowerTrench® technology, which optimizes on-state resistance while maintaining excellent switching characteristics.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Drain to Source Voltage (VDS) | 150 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 30 | A |
| Continuous Drain Current (ID) at TA = 25 °C | 6.7 | A |
| Pulsed Drain Current (ID) | 100 | A |
| Power Dissipation (PD) at TC = 25 °C | 96 | W |
| Power Dissipation (PD) at TA = 25 °C | 2.5 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 1.3 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 50 | °C/W |
| Static Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 6.7 A | 25 | mΩ |
| Static Drain to Source On Resistance (rDS(on)) at VGS = 6 V, ID = 5.8 A | 33 | mΩ |
| Gate to Source Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V |
| Total Gate Charge (Qg) at VGS = 0 V to 10 V | 25 - 36 | nC |
| Turn-On Delay Time (td(on)) | 14 - 25 | ns |
| Turn-Off Delay Time (td(off)) | 22 - 35 | ns |
| Rise Time (tr) | 4.3 - 10 | ns |
| Fall Time (tf) | 4.2 - 10 | ns |
Key Features
- Shielded Gate MOSFET Technology: Enhances on-state resistance and switching performance.
- Low On-State Resistance: Maximum rDS(on) of 25 mΩ at VGS = 10 V, ID = 6.7 A, and 33 mΩ at VGS = 6 V, ID = 5.8 A.
- Advanced Package and Silicon Combination: Optimized for high efficiency and low rDS(on).
- MSL1 Robust Package Design: Ensures reliability and durability.
- 100% UIL Tested: Guaranteed to meet strict quality standards.
- RoHS Compliant: Environmentally friendly, lead-free design.
Applications
- DC-DC Conversion: Ideal for power conversion applications due to its high efficiency and low on-state resistance.
- Power Management: Suitable for various power management systems requiring high current handling and low losses.
- Switching Applications: Excellent for applications that require fast switching times and low thermal resistance.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS86250?
150 V.
- What is the maximum continuous drain current (ID) at TA = 25 °C?
6.7 A.
- What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 6.7 A?
25 mΩ.
- What is the thermal resistance, junction to case (RθJC), of the FDMS86250?
1.3 °C/W.
- Is the FDMS86250 RoHS compliant?
Yes, it is RoHS compliant.
- What are the typical turn-on and turn-off delay times?
Turn-on delay time: 14 - 25 ns, Turn-off delay time: 22 - 35 ns.
- What is the maximum gate to source voltage (VGS)?
±20 V.
- What is the total gate charge (Qg) at VGS = 0 V to 10 V?
25 - 36 nC.
- What are the rise and fall times of the FDMS86250?
Rise time: 4.3 - 10 ns, Fall time: 4.2 - 10 ns.
- What are some common applications for the FDMS86250?
DC-DC conversion, power management, and switching applications.
