Overview
The FDMS86150 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by ON Semiconductor. This device is designed using ON Semiconductor’s advanced PowerTrench process, which incorporates Shielded Gate technology. This technology optimizes the on-state resistance while maintaining superior switching performance. The MOSFET is packaged in a Power 56 package, which is robust and designed for high efficiency and low on-state resistance.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | 100 | V | |
| VGS (Gate to Source Voltage) | - | - | ±20 | V | |
| ID (Drain Current - Continuous, TC = 25°C) | - | - | 80 | A | |
| ID (Drain Current - Continuous, TA = 25°C) | - | - | 16 | A | |
| ID (Drain Current - Pulsed) | - | - | 300 | A | |
| EAS (Single Pulse Avalanche Energy) | - | - | 726 | mJ | |
| PD (Power Dissipation, TC = 25°C) | - | - | 113 | W | |
| PD (Power Dissipation, TA = 25°C) | - | - | 2.7 | W | |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | - | -55 to +150 | °C | |
| rDS(on) (Static Drain to Source On Resistance at VGS = 10 V, ID = 16 A) | - | 3.9 | 4.85 | mΩ | |
| rDS(on) (Static Drain to Source On Resistance at VGS = 6 V, ID = 13 A) | - | 6 | 7.8 | mΩ | |
| BVDSS (Drain to Source Breakdown Voltage) | ID = 250 μA, VGS = 0 V | - | - | 100 | V |
| VGS(th) (Gate to Source Threshold Voltage) | VGS = VDS, ID = 250 μA | 2 | 3 | 4 | V |
Key Features
- Shielded Gate MOSFET Technology
- Low on-state resistance (rDS(on)) of 4.85 mΩ at VGS = 10 V, ID = 16 A and 7.8 mΩ at VGS = 6 V, ID = 13 A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- Pb-free and RoHS Compliant
Applications
- Primary DC-DC MOSFET
- Secondary Synchronous Rectifier
- Load Switch
Q & A
- What is the maximum drain to source voltage (VDS) for the FDMS86150 MOSFET?
The maximum drain to source voltage (VDS) is 100 V.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 80 A.
- What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 16 A?
The typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 16 A is 4.85 mΩ.
- Is the FDMS86150 MOSFET RoHS compliant?
Yes, the FDMS86150 MOSFET is Pb-free and RoHS compliant.
- What are the typical applications for the FDMS86150 MOSFET?
The typical applications include primary DC-DC MOSFET, secondary synchronous rectifier, and load switch.
- What is the operating and storage junction temperature range for the FDMS86150 MOSFET?
The operating and storage junction temperature range is -55 to +150 °C.
- What is the maximum gate to source voltage (VGS) for the FDMS86150 MOSFET?
The maximum gate to source voltage (VGS) is ±20 V.
- What is the thermal resistance, junction to case (RθJC), for the FDMS86150 MOSFET?
The thermal resistance, junction to case (RθJC), is 1.1 °C/W.
- Is the FDMS86150 MOSFET 100% UIL tested?
Yes, the FDMS86150 MOSFET is 100% UIL tested.
- What package type is used for the FDMS86150 MOSFET?
The FDMS86150 MOSFET is packaged in a Power 56 package.
