Overview
The FDMS86180 is an N-Channel MV MOSFET produced by onsemi, utilizing their advanced PowerTrench® process that incorporates Shielded Gate technology. This technology is optimized to minimize on-state resistance while maintaining superior switching performance and a best-in-class soft body diode. The device is suitable for a wide range of applications due to its robust design and compliance with various standards.
Key Specifications
| Parameter | Min. | Typ. | Max. | Units |
|---|---|---|---|---|
| Drain to Source Breakdown Voltage (BVDSS) | 100 | V | ||
| Gate to Source Threshold Voltage (VGS(th)) | 2.0 | 3.2 | 4.0 | V |
| Static Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 67 A | 2.4 | 3.2 | mΩ | |
| Static Drain to Source On Resistance (rDS(on)) at VGS = 6 V, ID = 33 A | 3.8 | 7.9 | mΩ | |
| Forward Transconductance (gFS) | 144 | S | ||
| Input Capacitance (Ciss) | 4439 | 6215 | pF | |
| Output Capacitance (Coss) | 2663 | 3730 | pF | |
| Reverse Transfer Capacitance (Crss) | 24 | 55 | pF | |
| Maximum Continuous Drain Current (ID) | 151 | A | ||
| Maximum Pulsed Drain Current | 775 | A |
Key Features
- Shielded Gate MOSFET Technology: Optimized to minimize on-state resistance and maintain superior switching performance.
- Low On-State Resistance: rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 67 A and rDS(on) = 7.9 mΩ at VGS = 6 V, ID = 33 A.
- Reduced Switching Noise/EMI: 50% lower Qrr compared to other MOSFET suppliers.
- Robust Package Design: MSL1 compliant and 100% UIL tested.
- RoHS Compliant: Meets the Restriction of Hazardous Substances directive.
- High Forward Transconductance: gFS = 144 S at VDS = 5 V, ID = 67 A.
Applications
The FDMS86180 is suitable for a variety of high-power applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching applications.
- Automotive and industrial power management systems.
Q & A
- What is the maximum drain to source breakdown voltage of the FDMS86180?
The maximum drain to source breakdown voltage (BVDSS) is 100 V.
- What is the typical gate to source threshold voltage?
The typical gate to source threshold voltage (VGS(th)) is 3.2 V.
- What is the on-state resistance at VGS = 10 V and ID = 67 A?
The on-state resistance (rDS(on)) is 3.2 mΩ at VGS = 10 V and ID = 67 A.
- Is the FDMS86180 RoHS compliant?
- What is the maximum continuous drain current?
The maximum continuous drain current (ID) is 151 A.
- What is the maximum pulsed drain current?
The maximum pulsed drain current is 775 A.
- What is the forward transconductance at VDS = 5 V and ID = 67 A?
The forward transconductance (gFS) is 144 S at VDS = 5 V and ID = 67 A.
- What are the key benefits of the Shielded Gate technology?
The Shielded Gate technology minimizes on-state resistance and reduces switching noise/EMI.
- What is the thermal resistance junction to ambient (RθJA) of the FDMS86180?
The thermal resistance junction to ambient (RθJA) is 45 °C/W when mounted on a 1 in^2 pad of 2 oz copper.
- What package type does the FDMS86180 come in?
The FDMS86180 comes in the Power 56 (SO-8FL) package.
