Overview
The FDMS86183 from onsemi is a high-performance N-Channel MOSFET designed using the advanced PowerTrench® process, which incorporates Shielded Gate technology. This technology optimizes the MOSFET to minimize on-state resistance while maintaining superior switching performance and a best-in-class soft body diode. The device is suitable for a wide range of applications due to its robust design and low switching noise/EMI characteristics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (Vdss) | 100 | V |
| Drain Current (ID) | 51 | A |
| Pulsed Drain Current (Idm) | 187 | A |
| On-State Resistance (RDS(on)) at VGS = 10 V, ID = 16 A | 12.8 | mΩ |
| On-State Resistance (RDS(on)) at VGS = 6 V, ID = 8 A | 34.6 | mΩ |
| Gate-Source Voltage (Vgs) | ±20 | V |
| Gate-Source Threshold Voltage (Vgs(th)) | 4 | V |
| Power Dissipation (PD) | 63 | W |
| Operating Temperature Range | -55 to +150 | °C |
| Package Style | POWER 56-8 (PQFN-8) | |
| Mounting Method | Surface Mount |
Key Features
- Shielded Gate MOSFET Technology: Optimized to minimize on-state resistance and maintain superior switching performance.
- Low On-State Resistance: Max RDS(on) = 12.8 mΩ at VGS = 10 V, ID = 16 A and Max RDS(on) = 34.6 mΩ at VGS = 6 V, ID = 8 A.
- Low Switching Noise/EMI: 50% lower Qrr than other MOSFET suppliers.
- Robust Package Design: MSL1 compliant and 100% UIL tested.
- RoHS Compliant: Environmentally friendly design.
- Best-in-Class Soft Body Diode: Enhances overall performance and reliability.
Applications
The FDMS86183 is versatile and suitable for various applications, including:
- Automotive systems
- Power supplies and DC-DC converters
- Motor control and drive systems
- Industrial power management
- Consumer electronics requiring high efficiency and low noise
Q & A
- What is the maximum drain-source voltage of the FDMS86183?
The maximum drain-source voltage (Vdss) is 100 V.
- What is the maximum continuous drain current of the FDMS86183?
The maximum continuous drain current (ID) is 51 A.
- What is the on-state resistance of the FDMS86183 at VGS = 10 V and ID = 16 A?
The on-state resistance (RDS(on)) is 12.8 mΩ at VGS = 10 V and ID = 16 A.
- What is the gate-source threshold voltage of the FDMS86183?
The gate-source threshold voltage (Vgs(th)) is approximately 4 V.
- What is the operating temperature range of the FDMS86183?
The operating temperature range is -55 to +150 °C.
- Is the FDMS86183 RoHS compliant?
- What package style does the FDMS86183 come in?
The FDMS86183 comes in a POWER 56-8 (PQFN-8) package.
- What is the typical gate charge of the FDMS86183?
The typical gate charge (Qg) is around 15 nC at VGS = 10 V.
- What are the benefits of the Shielded Gate technology in the FDMS86183?
The Shielded Gate technology minimizes on-state resistance and maintains superior switching performance with lower switching noise/EMI.
- Is the FDMS86183 suitable for automotive applications?
