Overview
The FDMS86181 is an N-Channel MV MOSFET produced by onsemi, utilizing their advanced PowerTrench® process with Shielded Gate technology. This technology is optimized to minimize on-state resistance while maintaining superior switching performance and a best-in-class soft body diode. The device is designed for general usage and is suitable for a wide range of applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 100 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 124 | A |
| Continuous Drain Current (ID) at TC = 100°C | 78 | A |
| Pulsed Drain Current (ID) | 510 | A |
| Power Dissipation (PD) at TC = 25°C | 125 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Static Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 44 A | 4.2 | mΩ |
| Static Drain to Source On Resistance (rDS(on)) at VGS = 6 V, ID = 22 A | 12 | mΩ |
| Thermal Resistance, Junction to Case (RθJC) | 1.0 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 50 | °C/W |
Key Features
- Shielded Gate MOSFET Technology: Enhances performance by minimizing on-state resistance and improving switching characteristics.
- Low On-State Resistance: Maximum rDS(on) of 4.2 mΩ at VGS = 10 V, ID = 44 A and 12 mΩ at VGS = 6 V, ID = 22 A.
- Reduced Qrr: 50% lower Qrr compared to other MOSFET suppliers, which lowers switching noise and EMI.
- MSL1 Robust Package Design: Ensures reliability and durability.
- 100% UIL Tested: Ensures the device meets stringent quality standards.
- RoHS Compliant: Meets environmental regulations.
- Best-in-Class Soft Body Diode: Improves overall device performance and reliability.
Applications
- Primary DC-DC MOSFET: Suitable for primary switching in DC-DC converters.
- Synchronous Rectifier in DC-DC and AC-DC: Ideal for synchronous rectification in various power conversion applications.
- Motor Drive: Used in motor drive applications due to its high current and low on-state resistance.
- Solar Applications: Suitable for solar power systems requiring high efficiency and reliability.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS86181?
The maximum drain to source voltage (VDS) is 100 V.
- What is the continuous drain current (ID) at a case temperature of 25°C?
The continuous drain current (ID) at TC = 25°C is 124 A.
- What is the thermal resistance from junction to case (RθJC) of the FDMS86181?
The thermal resistance from junction to case (RθJC) is 1.0 °C/W.
- Is the FDMS86181 RoHS compliant?
- What are the key benefits of the Shielded Gate MOSFET Technology in the FDMS86181?
The Shielded Gate MOSFET Technology minimizes on-state resistance and maintains superior switching performance with a best-in-class soft body diode.
- What is the maximum power dissipation (PD) at a case temperature of 25°C?
The maximum power dissipation (PD) at TC = 25°C is 125 W.
- What are the typical applications of the FDMS86181?
The FDMS86181 is typically used in primary DC-DC MOSFET, synchronous rectifier in DC-DC and AC-DC, motor drive, and solar applications.
- How does the FDMS86181 reduce switching noise and EMI?
The FDMS86181 reduces switching noise and EMI due to its 50% lower Qrr compared to other MOSFET suppliers.
- What is the package type of the FDMS86181?
The package type of the FDMS86181 is PQFN8 (5x6).
- Is the FDMS86181 100% UIL tested?
