Overview
The FDMS86350 is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed using onsemi’s advanced PowerTrench® process, which minimizes on-state resistance while maintaining superior switching performance. The MOSFET is optimized for high efficiency and low resistance, making it suitable for a variety of power management applications.
Key Specifications
| Parameter | Rating | Units |
|---|---|---|
| Drain to Source Voltage (VDS) | 80 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 130 | A |
| Pulsed Drain Current (ID) | 300 | A |
| Single Pulse Avalanche Energy (EAS) | 864 | mJ |
| Power Dissipation (PD) at TC = 25°C | 156 | W |
| Thermal Resistance, Junction to Case (RθJC) | 0.8 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 45 | °C/W |
| On-State Resistance (RDS(on)) at VGS = 10 V, ID = 25 A | 2.4 | mΩ |
| On-State Resistance (RDS(on)) at VGS = 8 V, ID = 22 A | 3.2 | mΩ |
| Gate to Source Threshold Voltage (VGS(th)) | 2.5 - 4.5 | V |
Key Features
- Advanced Package and Silicon combination for low RDS(on) and high efficiency
- Max RDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A and Max RDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant and Halogen Free
Applications
- Primary MOSFET
- Synchronous Rectifier
- Load Switch
- Motor Control Switch
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS86350 MOSFET?
The maximum drain to source voltage (VDS) is 80 V.
- What is the continuous drain current (ID) rating at TC = 25°C?
The continuous drain current (ID) rating at TC = 25°C is 130 A.
- What is the on-state resistance (RDS(on)) at VGS = 10 V and ID = 25 A?
The on-state resistance (RDS(on)) at VGS = 10 V and ID = 25 A is 2.4 mΩ.
- Is the FDMS86350 MOSFET RoHS Compliant?
- What are the typical applications of the FDMS86350 MOSFET?
The typical applications include Primary MOSFET, Synchronous Rectifier, Load Switch, and Motor Control Switch.
- What is the thermal resistance, junction to case (RθJC), of the FDMS86350 MOSFET?
The thermal resistance, junction to case (RθJC), is 0.8 °C/W.
- What is the gate to source threshold voltage (VGS(th)) range?
The gate to source threshold voltage (VGS(th)) range is 2.5 to 4.5 V.
- Is the FDMS86350 MOSFET MSL1 compliant?
- What is the single pulse avalanche energy (EAS) rating?
The single pulse avalanche energy (EAS) rating is 864 mJ.
- What is the power dissipation (PD) at TC = 25°C?
The power dissipation (PD) at TC = 25°C is 156 W.
