FDMS86300
  • Share:

onsemi FDMS86300

Manufacturer No:
FDMS86300
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 19A/80A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86300DC is a high-performance N-Channel MOSFET produced by onsemi using their advanced POWERTRENCH® process and DUAL COOL® package technology. This device is designed to offer the lowest on-resistance (rDS(on)) while maintaining excellent switching performance and thermal management. The FDMS86300DC is ideal for applications requiring high current handling and efficient thermal dissipation.

Key Specifications

ParameterValueUnits
Drain to Source Voltage (VDS)80V
Gate to Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C110A
Continuous Drain Current (ID) at TA = 25°C24A
Pulsed Drain Current (ID)260A
Single Pulse Avalanche Energy (EAS)240mJ
Power Dissipation (PD) at TC = 25°C125W
Power Dissipation (PD) at TA = 25°C3.2W
Operating and Storage Junction Temperature Range (TJ, TSTG)−55 to +150°C
Static Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 24 A3.1
Static Drain to Source On Resistance (rDS(on)) at VGS = 8 V, ID = 21 A4.0
Gate to Source Threshold Voltage (VGS(th))2.5 - 4.5V
Thermal Resistance, Junction to Case (RJC) Top Source2.3°C/W
Thermal Resistance, Junction to Case (RJC) Bottom Drain1.0°C/W

Key Features

  • DUAL COOL® Top Side Cooling PQFN package for enhanced thermal performance.
  • High-performance technology for extremely low rDS(on).
  • 100% UIL Tested for reliability.
  • RoHS Compliant, ensuring environmental sustainability.
  • Advanced Shielded Gate technology for improved switching characteristics.

Applications

  • Synchronous Rectifier for DC/DC Converters.
  • Telecom Secondary Side Rectification.
  • High End Server/Workstation Vcore Low Side.

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMS86300DC? The maximum drain to source voltage is 80 V.
  2. What is the continuous drain current (ID) at TC = 25°C? The continuous drain current at TC = 25°C is 110 A.
  3. What is the typical on-resistance (rDS(on)) at VGS = 10 V and ID = 24 A? The typical on-resistance is 3.1 mΩ.
  4. Is the FDMS86300DC RoHS compliant? Yes, the FDMS86300DC is RoHS compliant.
  5. What are the typical applications of the FDMS86300DC? Typical applications include synchronous rectifiers for DC/DC converters, telecom secondary side rectification, and high-end server/workstation Vcore low side.
  6. What is the thermal resistance, junction to case (RJC), for the top source? The thermal resistance, junction to case (RJC), for the top source is 2.3 °C/W.
  7. What is the maximum gate to source voltage (VGS)? The maximum gate to source voltage is ±20 V.
  8. What is the single pulse avalanche energy (EAS)? The single pulse avalanche energy is 240 mJ.
  9. What is the power dissipation (PD) at TA = 25°C? The power dissipation at TA = 25°C is 3.2 W.
  10. What is the operating and storage junction temperature range (TJ, TSTG)? The operating and storage junction temperature range is −55 to +150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7082 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$2.56
174

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMS86300 FDMS86320 FDMS86350 FDMS86310 FDMS86200
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V 80 V 150 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 80A (Tc) 10.5A (Ta), 22A (Tc) 25A (Ta), 130A (Tc) 17A (Ta), 50A (Tc) 9.6A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 8V, 10V 8V, 10V 8V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 19A, 10V 11.7mOhm @ 10.5A, 10V 2.4mOhm @ 25A, 10V 4.8mOhm @ 17A, 10V 18mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V 41 nC @ 10 V 155 nC @ 10 V 95 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7082 pF @ 40 V 2640 pF @ 40 V 10680 pF @ 40 V 6290 pF @ 40 V 2715 pF @ 75 V
FET Feature - - - - -
Power Dissipation (Max) 2.5W (Ta), 104W (Tc) 2.5W (Ta), 69W (Tc) 2.7W (Ta), 156W (Tc) 2.5W (Ta), 96W (Tc) 2.5W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD