FDMS86300
  • Share:

onsemi FDMS86300

Manufacturer No:
FDMS86300
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 19A/80A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86300DC is a high-performance N-Channel MOSFET produced by onsemi using their advanced POWERTRENCH® process and DUAL COOL® package technology. This device is designed to offer the lowest on-resistance (rDS(on)) while maintaining excellent switching performance and thermal management. The FDMS86300DC is ideal for applications requiring high current handling and efficient thermal dissipation.

Key Specifications

ParameterValueUnits
Drain to Source Voltage (VDS)80V
Gate to Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C110A
Continuous Drain Current (ID) at TA = 25°C24A
Pulsed Drain Current (ID)260A
Single Pulse Avalanche Energy (EAS)240mJ
Power Dissipation (PD) at TC = 25°C125W
Power Dissipation (PD) at TA = 25°C3.2W
Operating and Storage Junction Temperature Range (TJ, TSTG)−55 to +150°C
Static Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 24 A3.1
Static Drain to Source On Resistance (rDS(on)) at VGS = 8 V, ID = 21 A4.0
Gate to Source Threshold Voltage (VGS(th))2.5 - 4.5V
Thermal Resistance, Junction to Case (RJC) Top Source2.3°C/W
Thermal Resistance, Junction to Case (RJC) Bottom Drain1.0°C/W

Key Features

  • DUAL COOL® Top Side Cooling PQFN package for enhanced thermal performance.
  • High-performance technology for extremely low rDS(on).
  • 100% UIL Tested for reliability.
  • RoHS Compliant, ensuring environmental sustainability.
  • Advanced Shielded Gate technology for improved switching characteristics.

Applications

  • Synchronous Rectifier for DC/DC Converters.
  • Telecom Secondary Side Rectification.
  • High End Server/Workstation Vcore Low Side.

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMS86300DC? The maximum drain to source voltage is 80 V.
  2. What is the continuous drain current (ID) at TC = 25°C? The continuous drain current at TC = 25°C is 110 A.
  3. What is the typical on-resistance (rDS(on)) at VGS = 10 V and ID = 24 A? The typical on-resistance is 3.1 mΩ.
  4. Is the FDMS86300DC RoHS compliant? Yes, the FDMS86300DC is RoHS compliant.
  5. What are the typical applications of the FDMS86300DC? Typical applications include synchronous rectifiers for DC/DC converters, telecom secondary side rectification, and high-end server/workstation Vcore low side.
  6. What is the thermal resistance, junction to case (RJC), for the top source? The thermal resistance, junction to case (RJC), for the top source is 2.3 °C/W.
  7. What is the maximum gate to source voltage (VGS)? The maximum gate to source voltage is ±20 V.
  8. What is the single pulse avalanche energy (EAS)? The single pulse avalanche energy is 240 mJ.
  9. What is the power dissipation (PD) at TA = 25°C? The power dissipation at TA = 25°C is 3.2 W.
  10. What is the operating and storage junction temperature range (TJ, TSTG)? The operating and storage junction temperature range is −55 to +150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7082 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$2.56
174

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMS86300 FDMS86320 FDMS86350 FDMS86310 FDMS86200
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V 80 V 150 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 80A (Tc) 10.5A (Ta), 22A (Tc) 25A (Ta), 130A (Tc) 17A (Ta), 50A (Tc) 9.6A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 8V, 10V 8V, 10V 8V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 19A, 10V 11.7mOhm @ 10.5A, 10V 2.4mOhm @ 25A, 10V 4.8mOhm @ 17A, 10V 18mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V 41 nC @ 10 V 155 nC @ 10 V 95 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7082 pF @ 40 V 2640 pF @ 40 V 10680 pF @ 40 V 6290 pF @ 40 V 2715 pF @ 75 V
FET Feature - - - - -
Power Dissipation (Max) 2.5W (Ta), 104W (Tc) 2.5W (Ta), 69W (Tc) 2.7W (Ta), 156W (Tc) 2.5W (Ta), 96W (Tc) 2.5W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP