FDMS86300
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onsemi FDMS86300

Manufacturer No:
FDMS86300
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 19A/80A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86300DC is a high-performance N-Channel MOSFET produced by onsemi using their advanced POWERTRENCH® process and DUAL COOL® package technology. This device is designed to offer the lowest on-resistance (rDS(on)) while maintaining excellent switching performance and thermal management. The FDMS86300DC is ideal for applications requiring high current handling and efficient thermal dissipation.

Key Specifications

ParameterValueUnits
Drain to Source Voltage (VDS)80V
Gate to Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C110A
Continuous Drain Current (ID) at TA = 25°C24A
Pulsed Drain Current (ID)260A
Single Pulse Avalanche Energy (EAS)240mJ
Power Dissipation (PD) at TC = 25°C125W
Power Dissipation (PD) at TA = 25°C3.2W
Operating and Storage Junction Temperature Range (TJ, TSTG)−55 to +150°C
Static Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 24 A3.1mΩ
Static Drain to Source On Resistance (rDS(on)) at VGS = 8 V, ID = 21 A4.0mΩ
Gate to Source Threshold Voltage (VGS(th))2.5 - 4.5V
Thermal Resistance, Junction to Case (RJC) Top Source2.3°C/W
Thermal Resistance, Junction to Case (RJC) Bottom Drain1.0°C/W

Key Features

  • DUAL COOL® Top Side Cooling PQFN package for enhanced thermal performance.
  • High-performance technology for extremely low rDS(on).
  • 100% UIL Tested for reliability.
  • RoHS Compliant, ensuring environmental sustainability.
  • Advanced Shielded Gate technology for improved switching characteristics.

Applications

  • Synchronous Rectifier for DC/DC Converters.
  • Telecom Secondary Side Rectification.
  • High End Server/Workstation Vcore Low Side.

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMS86300DC? The maximum drain to source voltage is 80 V.
  2. What is the continuous drain current (ID) at TC = 25°C? The continuous drain current at TC = 25°C is 110 A.
  3. What is the typical on-resistance (rDS(on)) at VGS = 10 V and ID = 24 A? The typical on-resistance is 3.1 mΩ.
  4. Is the FDMS86300DC RoHS compliant? Yes, the FDMS86300DC is RoHS compliant.
  5. What are the typical applications of the FDMS86300DC? Typical applications include synchronous rectifiers for DC/DC converters, telecom secondary side rectification, and high-end server/workstation Vcore low side.
  6. What is the thermal resistance, junction to case (RJC), for the top source? The thermal resistance, junction to case (RJC), for the top source is 2.3 °C/W.
  7. What is the maximum gate to source voltage (VGS)? The maximum gate to source voltage is ±20 V.
  8. What is the single pulse avalanche energy (EAS)? The single pulse avalanche energy is 240 mJ.
  9. What is the power dissipation (PD) at TA = 25°C? The power dissipation at TA = 25°C is 3.2 W.
  10. What is the operating and storage junction temperature range (TJ, TSTG)? The operating and storage junction temperature range is −55 to +150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7082 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number FDMS86300 FDMS86320 FDMS86350 FDMS86310 FDMS86200
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V 80 V 150 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 80A (Tc) 10.5A (Ta), 22A (Tc) 25A (Ta), 130A (Tc) 17A (Ta), 50A (Tc) 9.6A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 8V, 10V 8V, 10V 8V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 19A, 10V 11.7mOhm @ 10.5A, 10V 2.4mOhm @ 25A, 10V 4.8mOhm @ 17A, 10V 18mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V 41 nC @ 10 V 155 nC @ 10 V 95 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7082 pF @ 40 V 2640 pF @ 40 V 10680 pF @ 40 V 6290 pF @ 40 V 2715 pF @ 75 V
FET Feature - - - - -
Power Dissipation (Max) 2.5W (Ta), 104W (Tc) 2.5W (Ta), 69W (Tc) 2.7W (Ta), 156W (Tc) 2.5W (Ta), 96W (Tc) 2.5W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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