FDMS86252L
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onsemi FDMS86252L

Manufacturer No:
FDMS86252L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 4.4A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86252L is an N-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench process with Shielded Gate technology. Although this product is currently obsolete and not in production, it remains a reference point for its specifications and capabilities. The MOSFET was designed to offer high performance and reliability in various power management applications.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)150 V
Continuous Drain Current (Id)4.4 A
Drain-Source Resistance (Rds On)46 mOhms
Gate-Source Voltage (Vgs)±20 V
Power Dissipation (Pd)50 W
Package TypePQFN8

Key Features

  • Advanced PowerTrench process with Shielded Gate technology for improved performance and reliability.
  • High drain-source breakdown voltage of 150 V.
  • Low drain-source resistance of 46 mOhms.
  • Continuous drain current of 4.4 A.
  • Compact PQFN8 package.

Applications

The FDMS86252L MOSFET is suitable for a variety of power management applications, including but not limited to:

  • DC-DC converters.
  • Power supplies.
  • Motor control systems.
  • Switching circuits.

Q & A

  1. What is the drain-source breakdown voltage of the FDMS86252L MOSFET?
    The drain-source breakdown voltage is 150 V.
  2. What is the continuous drain current of the FDMS86252L?
    The continuous drain current is 4.4 A.
  3. What is the drain-source resistance of the FDMS86252L?
    The drain-source resistance is 46 mOhms.
  4. What package type does the FDMS86252L use?
    The FDMS86252L uses a PQFN8 package.
  5. Is the FDMS86252L still in production?
    No, the FDMS86252L is obsolete and not in production.
  6. What technology is used in the FDMS86252L MOSFET?
    The FDMS86252L uses the advanced PowerTrench process with Shielded Gate technology.
  7. What are some typical applications for the FDMS86252L?
    Typical applications include DC-DC converters, power supplies, motor control systems, and switching circuits.
  8. What is the maximum power dissipation of the FDMS86252L?
    The maximum power dissipation is 50 W.
  9. What is the gate-source voltage range for the FDMS86252L?
    The gate-source voltage range is ±20 V.
  10. Where can I find detailed specifications for the FDMS86252L?
    Detailed specifications can be found in the datasheets available on websites such as Mouser Electronics and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:56mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1335 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number FDMS86252L FDMS86252
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Ta) 4.6A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 56mOhm @ 4.4A, 10V 51mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1335 pF @ 75 V 905 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

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