Overview
The BC858ALT1G is a general-purpose PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC858 series and is known for its reliability and versatility in various electronic applications. It is packaged in a SOT-23-3 (TO-236) surface mount format, making it suitable for compact and high-density circuit designs. The BC858ALT1G is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive and industrial standards.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | -30 | V |
| Collector-Base Voltage (VCBO) | -30 | V |
| Emitter-Base Voltage (VEBO) | -5.0 | V |
| Collector Current (IC) - Continuous | -100 | mA |
| Collector Current (IC) - Peak | -200 | mA |
| Total Device Dissipation (PD) - FR-5 Board | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (RJA) - FR-5 Board | 556 | °C/W |
| Junction and Storage Temperature (TJ, Tstg) | -55 to +150 | °C |
| Current Gain (hFE) | 125 to 520 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | -0.3 to -0.65 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | -0.7 to -0.9 | V |
| Current-Gain Bandwidth Product (fT) | 100 | MHz |
Key Features
- Pb-free, halogen-free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- High current gain (hFE) ranging from 125 to 520.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- High frequency operation with a current-gain bandwidth product (fT) of 100 MHz.
- Compact SOT-23-3 (TO-236) surface mount package.
Applications
The BC858ALT1G transistor is versatile and can be used in a variety of applications, including:
- General-purpose switching and amplification.
- Automotive systems due to its AEC-Q101 qualification.
- Industrial control circuits.
- Consumer electronics requiring reliable and compact transistor solutions.
- Audio and signal processing circuits.
Q & A
- What is the collector-emitter voltage (VCEO) of the BC858ALT1G transistor?
The collector-emitter voltage (VCEO) of the BC858ALT1G transistor is -30 V. - What is the package type of the BC858ALT1G transistor?
The BC858ALT1G transistor is packaged in a SOT-23-3 (TO-236) surface mount format. - Is the BC858ALT1G transistor RoHS compliant?
Yes, the BC858ALT1G transistor is Pb-free, halogen-free, and RoHS compliant. - What is the current gain (hFE) range of the BC858ALT1G transistor?
The current gain (hFE) of the BC858ALT1G transistor ranges from 125 to 520. - What is the maximum collector current (IC) of the BC858ALT1G transistor?
The maximum continuous collector current (IC) of the BC858ALT1G transistor is -100 mA, and the peak collector current is -200 mA. - What is the thermal resistance, junction-to-ambient (RJA), of the BC858ALT1G transistor on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA), of the BC858ALT1G transistor on an FR-5 board is 556 °C/W. - What are the junction and storage temperature ranges for the BC858ALT1G transistor?
The junction and storage temperature ranges for the BC858ALT1G transistor are -55 to +150 °C. - Is the BC858ALT1G transistor suitable for automotive applications?
Yes, the BC858ALT1G transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. - What is the current-gain bandwidth product (fT) of the BC858ALT1G transistor?
The current-gain bandwidth product (fT) of the BC858ALT1G transistor is 100 MHz. - What are some common applications of the BC858ALT1G transistor?
The BC858ALT1G transistor is commonly used in general-purpose switching and amplification, automotive systems, industrial control circuits, consumer electronics, and audio and signal processing circuits.
