BC858CLT1G
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onsemi BC858CLT1G

Manufacturer No:
BC858CLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC858CLT1G is a PNP bipolar transistor manufactured by onsemi. This transistor is designed for use in both linear and switching applications. It is housed in the SOT-23 (TO-236) package, which is suitable for lower power surface mount applications. The device is Pb-Free and available in packages that meet automotive and other unique site and control change requirements, making it AEC-Q101 qualified and PPAP capable.

Key Specifications

Parameter Value Unit
Polarity PNP -
Package Type SOT-23 (TO-236) -
VCE(sat) Max 0.3 V
IC Cont. 0.1 A
VCEO Min 30 V
VCBO 30 V
VEBO 5 V
VBE(sat) 0.7 V
VBE(on) 0.6 V
hFE Min 420 -
hFE Max 800 -
fT Min 100 MHz
PTM Max 0.225 W
Junction and Storage Temperature -55 to +150 °C

Key Features

  • Pb-Free Packages: Available for environmentally friendly applications.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • SOT-23 Package: Designed for lower power surface mount applications.
  • General Purpose and Low VCE(sat): Ideal for both linear and switching applications.
  • High Current Gain (hFE): With a minimum of 420 and a maximum of 800, ensuring reliable performance.

Applications

The BC858CLT1G transistor is versatile and can be used in a variety of applications, including:

  • Linear Amplifiers: Due to its general-purpose characteristics, it is suitable for linear amplifier circuits.
  • Switching Circuits: Its low VCE(sat) makes it efficient for switching applications.
  • Automotive Electronics: AEC-Q101 qualification makes it suitable for automotive systems.
  • Consumer Electronics: Can be used in various consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the polarity of the BC858CLT1G transistor?

    The BC858CLT1G is a PNP bipolar transistor.

  2. What is the maximum collector-emitter saturation voltage (VCE(sat)) of the BC858CLT1G?

    The maximum VCE(sat) is 0.3 V.

  3. What is the continuous collector current (IC Cont.) of the BC858CLT1G?

    The continuous collector current is 0.1 A.

  4. What is the minimum collector-emitter voltage (VCEO Min) of the BC858CLT1G?

    The minimum VCEO Min is 30 V.

  5. What is the package type of the BC858CLT1G?

    The BC858CLT1G is housed in the SOT-23 (TO-236) package.

  6. Is the BC858CLT1G Pb-Free?
  7. What are the junction and storage temperature ranges for the BC858CLT1G?

    The junction and storage temperature ranges are -55 to +150 °C.

  8. What is the maximum power dissipation (PTM Max) of the BC858CLT1G?

    The maximum power dissipation is 0.225 W.

  9. Is the BC858CLT1G AEC-Q101 qualified?
  10. What are some common applications for the BC858CLT1G transistor?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

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Similar Products

Part Number BC858CLT1G BC858CLT3G BC859CLT1G BC857CLT1G BC858ALT1G BC858BLT1G BC858CLT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Active Active Obsolete
Transistor Type PNP PNP PNP PNP PNP PNP -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 45 V 30 V 30 V -
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 125 @ 2mA, 5V 220 @ 2mA, 5V -
Power - Max 300 mW 300 mW 300 mW 300 mW 300 mW 300 mW -
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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