onsemi BC858CLT1G

Manufacturer No:: BC858CLT1G
Manufacturer:: onsemi
Package:: Tape & Reel (TR)
Description:: TRANS PNP 30V 0.1A SOT23-3
Delivery:
Payment:

Product Introduction

Overview

The BC858CLT1G is a PNP bipolar transistor manufactured by onsemi. This transistor is designed for use in both linear and switching applications. It is housed in the SOT-23 (TO-236) package, which is suitable for lower power surface mount applications. The device is Pb-Free and available in packages that meet automotive and other unique site and control change requirements, making it AEC-Q101 qualified and PPAP capable.

Key Specifications

Parameter	Value	Unit
Polarity	PNP	-
Package Type	SOT-23 (TO-236)	-
V_{CE(sat) Max}	0.3	V
I_{C Cont.}	0.1	A
V_{CEO Min}	30	V
V_CBO	30	V
V_EBO	5	V
V_BE(sat)	0.7	V
V_BE(on)	0.6	V
h_{FE Min}	420	-
h_{FE Max}	800	-
f_{T Min}	100	MHz
P_{TM Max}	0.225	W
Junction and Storage Temperature	-55 to +150	°C

Key Features

Pb-Free Packages: Available for environmentally friendly applications.
AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
SOT-23 Package: Designed for lower power surface mount applications.
General Purpose and Low V_CE(sat): Ideal for both linear and switching applications.
High Current Gain (h_FE): With a minimum of 420 and a maximum of 800, ensuring reliable performance.

Applications

The BC858CLT1G transistor is versatile and can be used in a variety of applications, including:

Linear Amplifiers: Due to its general-purpose characteristics, it is suitable for linear amplifier circuits.
Switching Circuits: Its low V_CE(sat) makes it efficient for switching applications.
Automotive Electronics: AEC-Q101 qualification makes it suitable for automotive systems.
Consumer Electronics: Can be used in various consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

What is the polarity of the BC858CLT1G transistor?
The BC858CLT1G is a PNP bipolar transistor.
What is the maximum collector-emitter saturation voltage (V_CE(sat)) of the BC858CLT1G?
The maximum V_CE(sat) is 0.3 V.
What is the continuous collector current (I_{C Cont.}) of the BC858CLT1G?
The continuous collector current is 0.1 A.
What is the minimum collector-emitter voltage (V_{CEO Min}) of the BC858CLT1G?
The minimum V_{CEO Min} is 30 V.
What is the package type of the BC858CLT1G?
The BC858CLT1G is housed in the SOT-23 (TO-236) package.
Is the BC858CLT1G Pb-Free?
What are the junction and storage temperature ranges for the BC858CLT1G?
The junction and storage temperature ranges are -55 to +150 °C.
What is the maximum power dissipation (P_{TM Max}) of the BC858CLT1G?
The maximum power dissipation is 0.225 W.
Is the BC858CLT1G AEC-Q101 qualified?
What are some common applications for the BC858CLT1G transistor?

In Stock

UnitPrice: $0.15

Quantity: 2,007

Please send RFQ , we will respond immediately.

Contact Name

Phone

Company

Country

Quantity

Same Series

Similar Products

Part Number	BC858CLT1G	BC858CLT3G	BC859CLT1G	BC857CLT1G	BC858ALT1G	BC858BLT1G	BC858CLT1
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Obsolete	Active	Active	Active	Obsolete
Transistor Type	PNP	PNP	PNP	PNP	PNP	PNP	-
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA	-
Voltage - Collector Emitter Breakdown (Max)	30 V	30 V	30 V	45 V	30 V	30 V	-
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA	650mV @ 5mA, 100mA	650mV @ 5mA, 100mA	650mV @ 5mA, 100mA	650mV @ 5mA, 100mA	650mV @ 5mA, 100mA	-
Current - Collector Cutoff (Max)	15nA (ICBO)	15nA (ICBO)	15nA (ICBO)	15nA (ICBO)	15nA (ICBO)	15nA (ICBO)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	420 @ 2mA, 5V	420 @ 2mA, 5V	420 @ 2mA, 5V	420 @ 2mA, 5V	125 @ 2mA, 5V	220 @ 2mA, 5V	-
Power - Max	300 mW	300 mW	300 mW	300 mW	300 mW	300 mW	-
Frequency - Transition	100MHz	100MHz	100MHz	100MHz	100MHz	100MHz	-
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	-
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	-
Supplier Device Package	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	-

Related Product By Categories

Transistor Type:	PNP
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	30 V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	420 @ 2mA, 5V
Power - Max:	300 mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)