onsemi BC857CLT1G

Manufacturer No:: BC857CLT1G
Manufacturer:: onsemi
Package:: Tape & Reel (TR)
Description:: TRANS PNP 45V 0.1A SOT23-3
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Product Introduction

Overview

The BC857CLT1G is a PNP Bipolar Transistor designed by onsemi for use in both linear and switching applications. This transistor is housed in the SOT-23 package, which is ideal for lower power surface mount applications. The device is Pb-Free, Halogen Free/BFR Free, and is RoHS compliant, making it suitable for a wide range of electronic designs. It also features AEC-Q101 qualification and PPAP capability, which are essential for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Parameter	Value	Unit
Collector-Emitter Voltage (V_CEO)	45	V
Collector-Base Voltage (V_CB0)	50	V
Emitter-Base Voltage (V_EB0)	5.0	V
Collector Current - Continuous (I_C)	100	mA
Collector-Emitter Saturation Voltage (V_CE(sat))	0.3	V
Base-Emitter Saturation Voltage (V_BE(sat))	0.7 - 0.9	V
Base-Emitter On Voltage (V_BE(on))	0.6 - 0.75	V
Current Gain (h_FE)	420 - 800
Power Dissipation (P_T)	0.225	W
Operating Temperature Range	-55°C to 125°C
Package Type	SOT-23 (TO-236)

Key Features

Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
General purpose transistor suitable for both linear and switching applications.
Low V_CE(sat) for efficient operation.
High current gain (h_FE) range of 420 to 800.

Applications

The BC857CLT1G is versatile and can be used in a variety of applications, including:

Linear amplifiers and switching circuits.
Automotive electronics due to its AEC-Q101 qualification and PPAP capability.
General purpose electronic designs where a reliable PNP transistor is required.
Surface mount applications where space is limited and lower power is necessary.

Q & A

What is the collector-emitter voltage (V_CEO) of the BC857CLT1G? The collector-emitter voltage (V_CEO) is 45 V.
What is the package type of the BC857CLT1G? The package type is SOT-23 (TO-236).
Is the BC857CLT1G Pb-Free and RoHS compliant? Yes, the BC857CLT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
What is the operating temperature range of the BC857CLT1G? The operating temperature range is -55°C to 125°C.
What are the typical applications of the BC857CLT1G? It is used in linear amplifiers, switching circuits, automotive electronics, and general purpose electronic designs.
What is the current gain (h_FE) range of the BC857CLT1G? The current gain (h_FE) range is 420 to 800.
What is the collector current - continuous (I_C) of the BC857CLT1G? The collector current - continuous (I_C) is 100 mA.
What is the power dissipation (P_T) of the BC857CLT1G? The power dissipation (P_T) is 0.225 W.
Is the BC857CLT1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
What is the base-emitter saturation voltage (V_BE(sat)) of the BC857CLT1G? The base-emitter saturation voltage (V_BE(sat)) is 0.7 - 0.9 V.

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UnitPrice: $0.13

Quantity: 4,036

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Part Number	BC857CLT1G	BC857CLT3G	BC858CLT1G	BC857CWT1G	BC857BLT1G	BC857CLT1
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Active	Active	Active	Obsolete
Transistor Type	PNP	PNP	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	45 V	45 V	30 V	45 V	45 V	45 V
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA	650mV @ 5mA, 100mA	650mV @ 5mA, 100mA	650mV @ 5mA, 100mA	650mV @ 5mA, 100mA	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)	15nA (ICBO)	15nA (ICBO)	15nA (ICBO)	15nA (ICBO)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	420 @ 2mA, 5V	420 @ 2mA, 5V	420 @ 2mA, 5V	420 @ 2mA, 5V	220 @ 2mA, 5V	420 @ 2mA, 5V
Power - Max	300 mW	300 mW	300 mW	150 mW	300 mW	300 mW
Frequency - Transition	100MHz	100MHz	100MHz	100MHz	100MHz	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	SC-70, SOT-323	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SC-70-3 (SOT323)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)

Related Product By Categories

Related Product By Brand

Transistor Type:	PNP
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	420 @ 2mA, 5V
Power - Max:	300 mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)