BC859BLT1
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onsemi BC859BLT1

Manufacturer No:
BC859BLT1
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC859BLT1 is a general-purpose PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. This transistor is part of the BC859 series and is known for its reliability and versatility in various electronic applications. It is packaged in a SOT-23-3 (TO-236) surface mount package, making it suitable for modern electronic designs that require compact and efficient components.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Collector-Emitter VoltageVCEO--30V
Collector-Base VoltageVCBO--50V
Emitter-Base VoltageVEBO--5.0V
Collector Current - ContinuousIC--100mA
Collector Current - PeakIC--200mA
Power - MaxP--300mW
Operating TemperatureTJ-55-150°C
DC Current Gain (hFE)hFE220---
Collector-Emitter Saturation VoltageVCE(sat)--0.65V
Base-Emitter Saturation VoltageVBE(sat)--0.9V
Current-Gain Bandwidth ProductfT100--MHz

Key Features

  • PNP Bipolar Junction Transistor: Suitable for a wide range of applications requiring PNP transistor functionality.
  • Compact Packaging: SOT-23-3 (TO-236) surface mount package for space-efficient designs.
  • High Current Gain: DC current gain (hFE) of up to 220 at 2 mA and 5 V, ensuring reliable amplification.
  • Low Saturation Voltages: Collector-Emitter and Base-Emitter saturation voltages are minimized to reduce power losses.
  • Wide Operating Temperature Range: Operates from -55°C to 150°C, making it suitable for various environmental conditions.
  • High Frequency Capability: Current-Gain Bandwidth Product of 100 MHz, suitable for high-frequency applications.

Applications

The BC859BLT1 transistor is versatile and can be used in a variety of electronic circuits, including:

  • Amplifier Circuits: For audio, signal, and power amplification.
  • Switching Circuits: In digital logic and power switching applications.
  • Regulator Circuits: In voltage regulators and power supply circuits.
  • Automotive Electronics: Due to its AEC-Q101 qualification, it is suitable for automotive applications.
  • General Purpose Electronics: In consumer electronics, industrial control systems, and other general-purpose electronic devices.

Q & A

  1. What is the collector-emitter voltage rating of the BC859BLT1 transistor?
    The collector-emitter voltage rating is 30 V.
  2. What is the maximum collector current for the BC859BLT1?
    The maximum continuous collector current is 100 mA, and the peak collector current is 200 mA.
  3. What is the operating temperature range of the BC859BLT1?
    The operating temperature range is from -55°C to 150°C.
  4. What is the DC current gain (hFE) of the BC859BLT1?
    The DC current gain (hFE) is typically 220 at 2 mA and 5 V.
  5. What is the package type of the BC859BLT1?
    The package type is SOT-23-3 (TO-236) surface mount.
  6. Is the BC859BLT1 RoHS compliant?
    No, the BC859BLT1 contains lead and is not RoHS compliant.
  7. What is the maximum power dissipation of the BC859BLT1?
    The maximum power dissipation is 300 mW.
  8. What is the current-gain bandwidth product of the BC859BLT1?
    The current-gain bandwidth product is 100 MHz.
  9. Can the BC859BLT1 be used in automotive applications?
  10. What is the emitter-base breakdown voltage of the BC859BLT1?
    The emitter-base breakdown voltage is 5.0 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC859BLT1 BC859BLT3 BC859BLT1G BC859CLT1 BC858BLT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete
Transistor Type PNP PNP PNP PNP -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V -
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V 420 @ 2mA, 5V -
Power - Max 300 mW 300 mW 300 mW 300 mW -
Frequency - Transition 100MHz 100MHz 100MHz 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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