BC856BLT3G
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onsemi BC856BLT3G

Manufacturer No:
BC856BLT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BLT3G is a general-purpose PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC856 series, known for its reliability and versatility in various electronic applications. The BC856BLT3G is packaged in a SOT-23 (Pb-Free) case, making it suitable for surface-mount technology (SMT) assembly. It is designed to operate within a wide range of temperatures and is known for its high current gain and low noise characteristics.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Collector-Base Breakdown VoltageV(BR)CBO-80--30V
Collector-Emitter Breakdown VoltageV(BR)CEO-65--30V
Emitter-Base Breakdown VoltageV(BR)EBO-5.0--5.0V
Collector Cutoff Current (VCB = -30 V)ICBO--15 nAnA
DC Current Gain (IC = -10 mA, VCE = -5 V)hFE----
Base-Emitter On Voltage (IC = -2.0 mA, VCE = -5 V)VBE(on)-0.6--0.75V
Current-Gain Bandwidth Product (IC = -10 mA, VCE = -5 Vdc, f = 100 MHz)fT--100 MHzMHz
Output Capacitance (VCB = -10 V, f = 1.0 MHz)Cob--4.5 pFpF

Key Features

  • General Purpose PNP BJT: Suitable for a wide range of applications requiring a PNP transistor.
  • High Current Gain: Offers high DC current gain, making it efficient for amplification and switching applications.
  • Low Noise Characteristics: Features low noise figure, which is beneficial for applications requiring minimal noise interference.
  • High Breakdown Voltages: Provides high collector-base, collector-emitter, and emitter-base breakdown voltages, ensuring robust operation under various conditions.
  • SOT-23 Package: Pb-Free SOT-23 package suitable for surface-mount technology, enhancing ease of assembly and reducing environmental impact.
  • ESD Rating: High ESD rating (>4000 V Human Body Model, >400 V Machine Model) for enhanced reliability against electrostatic discharge.

Applications

  • Amplifiers and Switches: Ideal for use in amplifier circuits and switching applications due to its high current gain and low noise characteristics.
  • Audio and Video Equipment: Suitable for use in audio and video equipment where low noise and high fidelity are required.
  • Automotive Electronics: Can be used in automotive systems due to its robust breakdown voltages and high reliability.
  • Industrial Control Systems: Applicable in industrial control systems where high current gain and low noise are essential.

Q & A

  1. What is the package type of the BC856BLT3G transistor?
    The BC856BLT3G is packaged in a Pb-Free SOT-23 case.
  2. What are the typical applications of the BC856BLT3G transistor?
    The BC856BLT3G is typically used in amplifiers, switches, audio and video equipment, automotive electronics, and industrial control systems.
  3. What is the collector-base breakdown voltage of the BC856BLT3G transistor?
    The collector-base breakdown voltage (V(BR)CBO) is -80 V to -30 V.
  4. What is the ESD rating of the BC856BLT3G transistor?
    The ESD rating is >4000 V Human Body Model and >400 V Machine Model.
  5. What is the current-gain bandwidth product of the BC856BLT3G transistor?
    The current-gain bandwidth product (fT) is 100 MHz.
  6. What is the output capacitance of the BC856BLT3G transistor?
    The output capacitance (Cob) is 4.5 pF.
  7. Is the BC856BLT3G transistor Pb-Free?
    Yes, the BC856BLT3G transistor is Pb-Free.
  8. What is the typical base-emitter on voltage of the BC856BLT3G transistor?
    The typical base-emitter on voltage (VBE(on)) is -0.6 V to -0.75 V.
  9. What is the collector cutoff current of the BC856BLT3G transistor?
    The collector cutoff current (ICBO) is up to 15 nA.
  10. Where can I find detailed ordering and shipping information for the BC856BLT3G transistor?
    Detailed ordering and shipping information can be found in the package dimensions section of the datasheet.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC856BLT3G BC856ALT3G BC856BLT1G BC856BLT3
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 125 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 300 mW 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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