BC859BLT1G
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onsemi BC859BLT1G

Manufacturer No:
BC859BLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC859BLT1G is a general-purpose PNP silicon transistor manufactured by ON Semiconductor. This transistor is part of the BC859 series, which is known for its reliability and versatility in various electronic applications. The BC859BLT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -30 V
Collector-Base Voltage VCBO -30 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous IC 0.1 A
Maximum Collector Power Dissipation Pc 0.225 W
Transition Frequency fT 100 MHz
Collector Capacitance Cob 4.5 pF
Forward Current Transfer Ratio (hFE), MIN hFE 220
Maximum Operating Junction Temperature Tj 150 °C
Package SOT23

Key Features

  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • General-purpose PNP silicon transistor with a wide range of applications.
  • High current gain and low noise figure.
  • Compact SOT23 package for space-efficient designs.

Applications

  • Automotive electronics: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • General-purpose amplification: Can be used in a variety of amplifier circuits.
  • Switching circuits: Applicable in switching applications due to its good switching characteristics.
  • Consumer electronics: Used in audio equipment, home appliances, and other consumer electronic devices.
  • Industrial control systems: Suitable for use in industrial control and automation systems.

Q & A

  1. What is the maximum collector-emitter voltage of the BC859BLT1G transistor?

    The maximum collector-emitter voltage (VCEO) is -30 V.

  2. What is the maximum collector current of the BC859BLT1G transistor?

    The maximum collector current (IC) is 0.1 A.

  3. What is the transition frequency (fT) of the BC859BLT1G transistor?

    The transition frequency (fT) is 100 MHz.

  4. Is the BC859BLT1G transistor RoHS compliant?
  5. What is the package type of the BC859BLT1G transistor?

    The package type is SOT23.

  6. What is the maximum operating junction temperature of the BC859BLT1G transistor?

    The maximum operating junction temperature (Tj) is 150 °C.

  7. What are some common applications of the BC859BLT1G transistor?

    Common applications include automotive electronics, general-purpose amplification, switching circuits, consumer electronics, and industrial control systems.

  8. Is the BC859BLT1G transistor suitable for automotive applications?
  9. What is the collector capacitance (Cob) of the BC859BLT1G transistor?

    The collector capacitance (Cob) is 4.5 pF.

  10. What is the minimum forward current transfer ratio (hFE) of the BC859BLT1G transistor?

    The minimum forward current transfer ratio (hFE) is 220.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC859BLT1G BC859BLT3G BC859CLT1G BC858BLT1G BC859BLT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Active Obsolete
Transistor Type PNP PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 300 mW 300 mW 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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