BC859CLT1G
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onsemi BC859CLT1G

Manufacturer No:
BC859CLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC859CLT1G is a general-purpose PNP transistor manufactured by ON Semiconductor. It is part of the BC859 series, known for its reliability and versatility in various electronic applications. This transistor is designed to meet the requirements of automotive and other demanding applications, being AEC-Q101 qualified and PPAP capable. The BC859CLT1G is also Pb-free, halogen-free, and RoHS compliant, making it an environmentally friendly choice.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO -30 - - V
Collector-Base Voltage VCBO -30 - - V
Emitter-Base Voltage VEBO -5.0 - - V
Collector Current - Continuous IC -100 - - mA
Base-Emitter Saturation Voltage VBE(sat) -0.7 - -0.9 V
Base-Emitter On Voltage VBE(on) -0.6 - -0.82 V
Current-Gain Bandwidth Product fT 100 - - MHz
Output Capacitance Cob - - 4.5 pF

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • High collector current capability of up to -100 mA.
  • Low base-emitter saturation voltage and on voltage.
  • High current-gain bandwidth product of 100 MHz.
  • Compact SOT-23 package, ideal for space-constrained designs.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • General-purpose amplification: Can be used in a wide range of amplification circuits.
  • Switching circuits: Ideal for switching applications due to its fast switching times.
  • Consumer electronics: Used in various consumer electronic devices requiring reliable and efficient transistor performance.
  • Industrial control systems: Suitable for industrial control and automation systems.

Q & A

  1. What is the collector-emitter voltage rating of the BC859CLT1G transistor?

    The collector-emitter voltage rating of the BC859CLT1G transistor is -30 V.

  2. Is the BC859CLT1G transistor RoHS compliant?
  3. What is the maximum collector current of the BC859CLT1G transistor?

    The maximum collector current of the BC859CLT1G transistor is -100 mA.

  4. What is the typical current-gain bandwidth product of the BC859CLT1G transistor?

    The typical current-gain bandwidth product of the BC859CLT1G transistor is 100 MHz.

  5. What package type is the BC859CLT1G transistor available in?

    The BC859CLT1G transistor is available in the SOT-23 package.

  6. Is the BC859CLT1G transistor suitable for automotive applications?
  7. What is the base-emitter saturation voltage range of the BC859CLT1G transistor?

    The base-emitter saturation voltage range of the BC859CLT1G transistor is -0.7 V to -0.9 V.

  8. What is the output capacitance of the BC859CLT1G transistor?

    The output capacitance of the BC859CLT1G transistor is up to 4.5 pF.

  9. What are the typical switching times of the BC859CLT1G transistor?

    The typical switching times include a delay time of 35 ns, rise time of 25 ns, storage time of 310 ns, and fall time of 40 ns.

  10. Where can I find detailed ordering and shipping information for the BC859CLT1G transistor?

    Detailed ordering and shipping information can be found in the package dimensions section of the datasheet.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC859CLT1G BC858CLT1G BC859BLT1G BC859CLT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 300 mW 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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