BC856ALT3
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onsemi BC856ALT3

Manufacturer No:
BC856ALT3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856ALT3 is a general-purpose PNP silicon transistor manufactured by onsemi. It is designed for low-power surface mount applications and is housed in the SOT-23 (TO-236) package. This transistor is part of the BC856 series, which includes various versions with different current gain and voltage ratings. The BC856ALT3 is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -65 V
Collector-Base Voltage VCBO -80 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous IC -100 mA
Collector Current - Peak (1 ms pulse) ICM -200 mA
DC Current Gain (hFE) hFE 125 - 475 -
Collector-Emitter Saturation Voltage VCE(sat) -0.3 - 0.65 V
Base-Emitter Saturation Voltage VBE(sat) -0.7 - 0.9 V
Operating Temperature TJ -55°C to 150°C -
Transition Frequency fT 100 MHz -

Key Features

  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Housed in the SOT-23 (TO-236) package, designed for low-power surface mount applications.
  • High DC current gain (hFE) ranging from 125 to 475.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
  • High transition frequency (fT) of 100 MHz.

Applications

  • General-purpose amplifier applications.
  • Automotive applications due to AEC-Q101 qualification and PPAP capability.
  • Low-power surface mount applications in various electronic devices.
  • Switching and linear circuits where high current gain and low saturation voltages are required).

Q & A

  1. What is the collector-emitter voltage rating of the BC856ALT3 transistor?

    The collector-emitter voltage rating (VCEO) of the BC856ALT3 transistor is -65 V.

  2. What is the maximum collector current for the BC856ALT3 transistor?

    The maximum continuous collector current (IC) for the BC856ALT3 transistor is -100 mA, and the peak collector current (ICM) is -200 mA).

  3. What is the DC current gain (hFE) range for the BC856ALT3 transistor?

    The DC current gain (hFE) for the BC856ALT3 transistor ranges from 125 to 475).

  4. What is the operating temperature range for the BC856ALT3 transistor?

    The operating temperature range (TJ) for the BC856ALT3 transistor is -55°C to 150°C).

  5. Is the BC856ALT3 transistor RoHS compliant?

    Yes, the BC856ALT3 transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant).

  6. What package type is the BC856ALT3 transistor available in?

    The BC856ALT3 transistor is housed in the SOT-23 (TO-236) package).

  7. What is the transition frequency (fT) of the BC856ALT3 transistor?

    The transition frequency (fT) of the BC856ALT3 transistor is 100 MHz).

  8. What are some typical applications for the BC856ALT3 transistor?

    The BC856ALT3 transistor is typically used in general-purpose amplifier applications, automotive applications, and other low-power surface mount applications).

  9. Is the BC856ALT3 transistor suitable for automotive use?

    Yes, the BC856ALT3 transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications).

  10. What are the saturation voltages for the BC856ALT3 transistor?

    The collector-emitter saturation voltage (VCE(sat)) ranges from -0.3 to -0.65 V, and the base-emitter saturation voltage (VBE(sat)) ranges from -0.7 to -0.9 V).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC856ALT3 BC856ALT3G BC856BLT3 BC856ALT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type PNP PNP PNP -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V 65 V -
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 125 @ 2mA, 5V 220 @ 2mA, 5V -
Power - Max 300 mW 300 mW 300 mW -
Frequency - Transition 100MHz 100MHz 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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