BC858CLT3G
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onsemi BC858CLT3G

Manufacturer No:
BC858CLT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC858CLT3G is a general-purpose PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. This transistor is part of the BC856ALT1G series and is designed for a wide range of applications requiring reliable and efficient performance. The BC858CLT3G is known for its robust specifications, making it suitable for various electronic circuits, including amplifiers, switches, and other general-purpose applications.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 30 V
Collector-Base Voltage (VCBO) 30 V
Emitter-Base Voltage (VEBO) 5.0 V
Collector Current - Continuous (IC) 100 mA
Collector Current - Peak (IC) 200 mA
Total Device Dissipation (PD) 225 mW (FR5 Board), 300 mW (Alumina Substrate) mW
Thermal Resistance, Junction-to-Ambient (RθJA) 556 C/W (FR5 Board), 417 C/W (Alumina Substrate) C/W
Junction and Storage Temperature (TJ, Tstg) -55 to +150 °C
DC Current Gain (hFE) 90 to 270
Collector-Emitter Saturation Voltage (VCE(sat)) 0.3 to 0.65 V V
Base-Emitter Saturation Voltage (VBE(sat)) 0.7 to 0.9 V V
Current-Gain Bandwidth Product (fT) 100 MHz MHz

Key Features

  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • High DC Current Gain: Ranges from 90 to 270, ensuring reliable amplification and switching performance.
  • Low Saturation Voltages: Collector-Emitter and Base-Emitter saturation voltages are minimized for efficient operation.
  • High Current-Gain Bandwidth Product: Up to 100 MHz, suitable for high-frequency applications.
  • Compact SOT23 (TO236) Package: Ideal for space-constrained designs.

Applications

  • General-Purpose Amplifiers: Suitable for various amplifier circuits due to its high DC current gain and low saturation voltages.
  • Switching Circuits: Can be used in switching applications where high speed and low power consumption are required.
  • Automotive Electronics: AEC-Q101 qualified, making it suitable for automotive systems.
  • Consumer Electronics: Used in a variety of consumer electronic devices such as audio equipment, home appliances, and more.
  • Industrial Control Systems: Reliable performance in industrial control and automation systems.

Q & A

  1. What is the collector-emitter voltage rating of the BC858CLT3G transistor?

    The collector-emitter voltage rating (VCEO) is 30 V.

  2. What is the maximum continuous collector current for the BC858CLT3G?

    The maximum continuous collector current (IC) is 100 mA.

  3. Is the BC858CLT3G RoHS compliant?

    Yes, the BC858CLT3G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  4. What is the typical DC current gain (hFE) of the BC858CLT3G?

    The typical DC current gain (hFE) ranges from 90 to 270.

  5. What is the package type of the BC858CLT3G transistor?

    The BC858CLT3G comes in a SOT23 (TO236) package.

  6. What are the junction and storage temperature ranges for the BC858CLT3G?

    The junction and storage temperature ranges are -55 to +150°C.

  7. Is the BC858CLT3G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other similar applications.

  8. What is the current-gain bandwidth product (fT) of the BC858CLT3G?

    The current-gain bandwidth product (fT) is up to 100 MHz.

  9. What are the typical collector-emitter and base-emitter saturation voltages for the BC858CLT3G?

    The typical collector-emitter saturation voltage (VCE(sat)) is 0.3 to 0.65 V, and the base-emitter saturation voltage (VBE(sat)) is 0.7 to 0.9 V.

  10. Can the BC858CLT3G be used in high-frequency applications?

    Yes, it is suitable for high-frequency applications due to its high current-gain bandwidth product.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC858CLT3G BC857CLT3G BC858BLT3G BC858CLT1G BC858CLT3
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Transistor Type PNP PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 45 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 300 mW 300 mW 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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