Overview
The BC858CLT3G is a general-purpose PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. This transistor is part of the BC856ALT1G series and is designed for a wide range of applications requiring reliable and efficient performance. The BC858CLT3G is known for its robust specifications, making it suitable for various electronic circuits, including amplifiers, switches, and other general-purpose applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 30 | V |
| Collector-Base Voltage (VCBO) | 30 | V |
| Emitter-Base Voltage (VEBO) | 5.0 | V |
| Collector Current - Continuous (IC) | 100 | mA |
| Collector Current - Peak (IC) | 200 | mA |
| Total Device Dissipation (PD) | 225 mW (FR5 Board), 300 mW (Alumina Substrate) | mW |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 556 C/W (FR5 Board), 417 C/W (Alumina Substrate) | C/W |
| Junction and Storage Temperature (TJ, Tstg) | -55 to +150 | °C |
| DC Current Gain (hFE) | 90 to 270 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.3 to 0.65 V | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.7 to 0.9 V | V |
| Current-Gain Bandwidth Product (fT) | 100 MHz | MHz |
Key Features
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- High DC Current Gain: Ranges from 90 to 270, ensuring reliable amplification and switching performance.
- Low Saturation Voltages: Collector-Emitter and Base-Emitter saturation voltages are minimized for efficient operation.
- High Current-Gain Bandwidth Product: Up to 100 MHz, suitable for high-frequency applications.
- Compact SOT23 (TO236) Package: Ideal for space-constrained designs.
Applications
- General-Purpose Amplifiers: Suitable for various amplifier circuits due to its high DC current gain and low saturation voltages.
- Switching Circuits: Can be used in switching applications where high speed and low power consumption are required.
- Automotive Electronics: AEC-Q101 qualified, making it suitable for automotive systems.
- Consumer Electronics: Used in a variety of consumer electronic devices such as audio equipment, home appliances, and more.
- Industrial Control Systems: Reliable performance in industrial control and automation systems.
Q & A
- What is the collector-emitter voltage rating of the BC858CLT3G transistor?
The collector-emitter voltage rating (VCEO) is 30 V.
- What is the maximum continuous collector current for the BC858CLT3G?
The maximum continuous collector current (IC) is 100 mA.
- Is the BC858CLT3G RoHS compliant?
Yes, the BC858CLT3G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What is the typical DC current gain (hFE) of the BC858CLT3G?
The typical DC current gain (hFE) ranges from 90 to 270.
- What is the package type of the BC858CLT3G transistor?
The BC858CLT3G comes in a SOT23 (TO236) package.
- What are the junction and storage temperature ranges for the BC858CLT3G?
The junction and storage temperature ranges are -55 to +150°C.
- Is the BC858CLT3G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other similar applications.
- What is the current-gain bandwidth product (fT) of the BC858CLT3G?
The current-gain bandwidth product (fT) is up to 100 MHz.
- What are the typical collector-emitter and base-emitter saturation voltages for the BC858CLT3G?
The typical collector-emitter saturation voltage (VCE(sat)) is 0.3 to 0.65 V, and the base-emitter saturation voltage (VBE(sat)) is 0.7 to 0.9 V.
- Can the BC858CLT3G be used in high-frequency applications?
Yes, it is suitable for high-frequency applications due to its high current-gain bandwidth product.
