Overview
The BC847ALT1 is a general-purpose NPN epitaxial silicon transistor manufactured by onsemi. It is part of the BC847 series, known for its versatility in both switching and amplifier applications. This transistor is available in Pb-free packages and is suitable for automatic insertion in thick and thin-film circuits. The BC847ALT1 is widely used due to its low noise characteristics and robust performance across various operating conditions.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | V |
| Collector-Emitter Voltage | VCEO | 45 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current (DC) | IC | 100 | mA |
| Junction Temperature | TJ | 150 | °C |
| Storage Temperature Range | TSTG | -65 to +150 | °C |
| Power Dissipation | PD | 310 | mW |
| Thermal Resistance, Junction-to-Ambient | RθJA | 403 | °C/W |
| DC Current Gain (hFE) | hFE | 110-800 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | 0.25-0.6 V (IC=10 mA, IB=0.5 mA) | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | VBE(sat) | 0.7-0.9 V (IC=10 mA, IB=0.5 mA) | V |
| Base-Emitter On Voltage (VBE(on)) | VBE(on) | 580-700 mV (IC=2 mA, VCE=5 V) | mV |
| Current Gain Bandwidth Product (fT) | fT | 100 MHz (IC=10 mA, VCE=5 V, f=100 MHz) | MHz |
Key Features
- Suitable for switching and amplifier applications.
- Low noise characteristics, especially in the BC850 variant.
- Pb-free packages available.
- Moisture Sensitivity Level: 1.
- ESD rating for enhanced durability.
- Complement to BC856, BC857, BC858, BC859, and BC860 transistors.
- Available in various package types, including SOT-23.
Applications
The BC847ALT1 transistor is versatile and can be used in a variety of applications, including:
- General-purpose switching circuits.
- Amplifier circuits requiring low noise and high current gain.
- Automotive and industrial control systems.
- Consumer electronics such as audio equipment and home appliances.
- Thick and thin-film circuits due to its suitability for automatic insertion.
Q & A
- What is the maximum collector-emitter voltage for the BC847ALT1 transistor?
The maximum collector-emitter voltage (VCEO) for the BC847ALT1 is 45 V. - What is the typical DC current gain (hFE) for this transistor?
The typical DC current gain (hFE) ranges from 110 to 800, depending on the classification. - What is the maximum collector current for the BC847ALT1?
The maximum collector current (IC) is 100 mA. - What is the storage temperature range for this transistor?
The storage temperature range (TSTG) is -65 to +150 °C. - Is the BC847ALT1 suitable for high-temperature applications?
Yes, it has a junction temperature (TJ) of up to 150 °C. - What are the package options available for the BC847ALT1?
The transistor is available in various packages, including SOT-23 and tape and reel type packing. - Does the BC847ALT1 have any special handling requirements?
Yes, it has a Moisture Sensitivity Level of 1, indicating it requires careful handling to avoid moisture damage. - Can the BC847ALT1 be used in life support systems or medical devices?
No, it is not recommended for use in life support systems or any FDA Class 3 medical devices due to specific usage restrictions. - What is the thermal resistance, junction-to-ambient (RθJA) for this transistor?
The thermal resistance, junction-to-ambient (RθJA), is 403 °C/W. - What is the current gain bandwidth product (fT) of the BC847ALT1?
The current gain bandwidth product (fT) is 100 MHz at IC = 10 mA, VCE = 5 V, and f = 100 MHz.
