Overview
The BC847BLT3G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC847 series and is known for its versatility and reliability in various electronic applications. It is packaged in a surface-mount SOT-23-3 (TO-236) format, making it suitable for modern PCB designs. The BC847BLT3G is widely used in amplification, switching, and other general-purpose applications due to its robust electrical characteristics and compact form factor.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | - | - | 80 | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | - | - | 45 | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | - | - | 6.0 | V |
| Collector Current | IC | - | - | 100 | mA |
| Power Dissipation | Pd | - | - | 300 | mW |
| Current Gain (hFE) | hFE | 110 | 200 | 420 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 0.7 | V |
| Transition Frequency | fT | - | - | 100 | MHz |
Key Features
- Compact Package: The BC847BLT3G is packaged in a SOT-23-3 (TO-236) surface-mount format, making it ideal for space-constrained designs.
- High Current Gain: The transistor offers a high current gain (hFE) ranging from 110 to 420, depending on the collector current, making it suitable for amplification applications.
- Low Saturation Voltages: It features low collector-emitter and base-emitter saturation voltages, which are beneficial for reducing power consumption in switching applications.
- High Transition Frequency: With a transition frequency of 100 MHz, this transistor is capable of handling high-frequency signals.
- Robust Electrical Characteristics: The BC847BLT3G has robust breakdown voltages and low leakage currents, ensuring reliable operation under various conditions.
Applications
- Amplification Circuits: The BC847BLT3G is commonly used in audio and signal amplification circuits due to its high current gain and low noise characteristics.
- Switching Circuits: Its low saturation voltages and high transition frequency make it suitable for high-speed switching applications.
- General-Purpose Electronics: This transistor is versatile and can be used in a variety of general-purpose electronic circuits, including voltage regulators, logic circuits, and more.
- Automotive and Industrial Electronics: The robust electrical characteristics of the BC847BLT3G make it a reliable choice for use in automotive and industrial electronic systems.
Q & A
- What is the package type of the BC847BLT3G transistor?
The BC847BLT3G is packaged in a surface-mount SOT-23-3 (TO-236) format.
- What is the maximum collector current of the BC847BLT3G?
The maximum collector current is 100 mA.
- What is the transition frequency of the BC847BLT3G?
The transition frequency is 100 MHz.
- What are the typical applications of the BC847BLT3G transistor?
The BC847BLT3G is commonly used in amplification circuits, switching circuits, general-purpose electronics, and in automotive and industrial electronic systems.
- What is the collector-emitter breakdown voltage of the BC847BLT3G?
The collector-emitter breakdown voltage (V(BR)CEO) is up to 45 V.
- What is the power dissipation of the BC847BLT3G?
The power dissipation (Pd) is up to 300 mW.
- What is the current gain (hFE) range of the BC847BLT3G?
The current gain (hFE) ranges from 110 to 420, depending on the collector current.
- What are the saturation voltages of the BC847BLT3G?
The collector-emitter saturation voltage (VCE(sat)) is up to 0.25 V, and the base-emitter saturation voltage (VBE(sat)) is up to 0.7 V.
- Is the BC847BLT3G suitable for high-frequency applications?
Yes, with a transition frequency of 100 MHz, it is suitable for high-frequency applications.
- Where can I find detailed specifications for the BC847BLT3G?
Detailed specifications can be found in the datasheet available on the onsemi website, as well as on distributor websites like Mouser and Digi-Key.
