BC850CLT1G
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onsemi BC850CLT1G

Manufacturer No:
BC850CLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC850CLT1G is a general-purpose NPN bipolar transistor manufactured by onsemi. It is designed for use in both linear and switching applications. This transistor is housed in a SOT-23 package, making it suitable for lower power surface-mount applications. The device is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding environments. It also features high ESD ratings and is RoHS compliant, making it a versatile choice for various industrial and power management applications.

Key Specifications

Specification Value
Transistor Type NPN
Maximum DC Collector Current 100 mA
Maximum Collector Emitter Voltage 45 V
Package Type SOT-23
Mounting Type Surface Mount
Maximum Power Dissipation 225 mW
Minimum DC Current Gain (hFE) 420 (min) / 800 (typical)
Maximum Collector Base Voltage 50 V
Maximum Emitter Base Voltage 6 V
Maximum Operating Frequency 100 MHz
Pin Count 3
Number of Elements per Chip 1
Dimensions 0.94 x 2.9 x 1.3 mm
Maximum Operating Temperature +150 °C

Key Features

  • AEC-Q101 qualified for automotive applications, ensuring high reliability and performance in demanding environments.
  • High ESD ratings: 4000V Human Body Model and 400V Machine Model, enhancing device robustness against electrostatic discharge.
  • RoHS compliant, making it suitable for use in applications where environmental regulations are stringent.
  • Surface mount SOT-23 package, ideal for lower power surface-mount applications.
  • High transition frequency of 100 MHz, suitable for high-frequency applications.
  • Minimum DC current gain (hFE) of 420, ensuring consistent performance in various circuits.

Applications

  • Industrial applications: The BC850CLT1G is used in various industrial control and automation systems due to its reliability and performance.
  • Power Management: It is utilized in power management circuits where its high current gain and low power dissipation are beneficial.
  • Automotive: AEC-Q101 qualification makes it suitable for use in automotive systems, including sensors, actuators, and other control circuits.
  • General-purpose linear and switching applications: Its versatility makes it a popular choice for a wide range of electronic circuits.

Q & A

  1. What is the transistor type of the BC850CLT1G? The BC850CLT1G is an NPN bipolar transistor.
  2. What is the maximum DC collector current of the BC850CLT1G? The maximum DC collector current is 100 mA.
  3. What is the maximum collector emitter voltage of the BC850CLT1G? The maximum collector emitter voltage is 45 V.
  4. What package type does the BC850CLT1G use? The BC850CLT1G is housed in a SOT-23 package.
  5. Is the BC850CLT1G AEC-Q101 qualified? Yes, the BC850CLT1G is AEC-Q101 qualified, making it suitable for automotive applications.
  6. What is the maximum power dissipation of the BC850CLT1G? The maximum power dissipation is 225 mW.
  7. What is the minimum DC current gain (hFE) of the BC850CLT1G? The minimum DC current gain (hFE) is 420.
  8. What is the maximum operating frequency of the BC850CLT1G? The maximum operating frequency is 100 MHz.
  9. Is the BC850CLT1G RoHS compliant? Yes, the BC850CLT1G is RoHS compliant.
  10. What are the typical applications of the BC850CLT1G? The BC850CLT1G is used in industrial, power management, and automotive applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:225 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC850CLT1G BC850BLT1G BC850CLT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 225 mW 225 mW 225 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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