Overview
The BC850CLT1 is a bipolar junction transistor (BJT) produced by onsemi, designed for a variety of electronic applications. This NPN transistor is known for its reliability and performance in low to medium power amplification and switching circuits. It is packaged in a surface-mount SOT-23-3 (TO-236) format, making it suitable for modern PCB designs where space efficiency is crucial.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Transistor Polarity | NPN | - |
Configuration | Single | - |
Maximum DC Collector Current | 100 | mA |
Collector-Emitter Voltage (VCEO Max) | 45 | V |
Collector-Base Breakdown Voltage (V(BR)CBO) | 50 | V |
Collector-Emitter Saturation Voltage (VCE(sat)) | 0.25 - 0.6 | V |
Base-Emitter Saturation Voltage (VBE(sat)) | 0.7 - 0.9 | V |
Current Gain (hFE) | 110 - 420 | - |
Bandwidth Product (fT) | 100 | MHz |
Power Dissipation (Pd) | 225 | mW |
Package Type | SOT-23-3 (TO-236) | - |
Key Features
- High Current Gain: The BC850CLT1 offers a high current gain (hFE) ranging from 110 to 420, making it suitable for amplification applications.
- Low Saturation Voltage: It features low collector-emitter and base-emitter saturation voltages, which are beneficial for reducing power consumption in switching circuits.
- High Frequency Capability: With a bandwidth product (fT) of 100 MHz, this transistor is capable of handling high-frequency signals.
- Compact Packaging: The SOT-23-3 package is compact and ideal for surface-mount technology, allowing for efficient use of board space.
Applications
The BC850CLT1 is versatile and can be used in a variety of applications, including:
- Low to Medium Power Amplification: Suitable for audio amplifiers, signal amplifiers, and other low to medium power amplification needs.
- Switching Circuits: Its low saturation voltages make it ideal for use in switching circuits, such as in power supplies, motor control, and relay drivers.
- General Purpose Electronics: It can be used in various general-purpose electronic circuits where a reliable NPN transistor is required.
Q & A
- What is the transistor polarity of the BC850CLT1?
The BC850CLT1 is an NPN transistor. - What is the maximum DC collector current of the BC850CLT1?
The maximum DC collector current is 100 mA. - What is the collector-emitter breakdown voltage (VCEO) of the BC850CLT1?
The collector-emitter breakdown voltage (VCEO) is 45 V. - What is the package type of the BC850CLT1?
The package type is SOT-23-3 (TO-236). - What is the bandwidth product (fT) of the BC850CLT1?
The bandwidth product (fT) is 100 MHz. - What are the typical applications of the BC850CLT1?
The BC850CLT1 is used in low to medium power amplification, switching circuits, and general-purpose electronics. - What is the power dissipation (Pd) of the BC850CLT1?
The power dissipation (Pd) is 225 mW. - What is the range of current gain (hFE) for the BC850CLT1?
The current gain (hFE) ranges from 110 to 420. - Is the BC850CLT1 suitable for high-frequency applications?
Yes, it is suitable for high-frequency applications due to its 100 MHz bandwidth product. - What are the benefits of the low saturation voltages of the BC850CLT1?
The low saturation voltages reduce power consumption in switching circuits.