BC850CLT1
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onsemi BC850CLT1

Manufacturer No:
BC850CLT1
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC850CLT1 is a bipolar junction transistor (BJT) produced by onsemi, designed for a variety of electronic applications. This NPN transistor is known for its reliability and performance in low to medium power amplification and switching circuits. It is packaged in a surface-mount SOT-23-3 (TO-236) format, making it suitable for modern PCB designs where space efficiency is crucial.

Key Specifications

ParameterValueUnit
Transistor PolarityNPN-
ConfigurationSingle-
Maximum DC Collector Current100mA
Collector-Emitter Voltage (VCEO Max)45V
Collector-Base Breakdown Voltage (V(BR)CBO)50V
Collector-Emitter Saturation Voltage (VCE(sat))0.25 - 0.6V
Base-Emitter Saturation Voltage (VBE(sat))0.7 - 0.9V
Current Gain (hFE)110 - 420-
Bandwidth Product (fT)100MHz
Power Dissipation (Pd)225mW
Package TypeSOT-23-3 (TO-236)-

Key Features

  • High Current Gain: The BC850CLT1 offers a high current gain (hFE) ranging from 110 to 420, making it suitable for amplification applications.
  • Low Saturation Voltage: It features low collector-emitter and base-emitter saturation voltages, which are beneficial for reducing power consumption in switching circuits.
  • High Frequency Capability: With a bandwidth product (fT) of 100 MHz, this transistor is capable of handling high-frequency signals.
  • Compact Packaging: The SOT-23-3 package is compact and ideal for surface-mount technology, allowing for efficient use of board space.

Applications

The BC850CLT1 is versatile and can be used in a variety of applications, including:

  • Low to Medium Power Amplification: Suitable for audio amplifiers, signal amplifiers, and other low to medium power amplification needs.
  • Switching Circuits: Its low saturation voltages make it ideal for use in switching circuits, such as in power supplies, motor control, and relay drivers.
  • General Purpose Electronics: It can be used in various general-purpose electronic circuits where a reliable NPN transistor is required.

Q & A

  1. What is the transistor polarity of the BC850CLT1?
    The BC850CLT1 is an NPN transistor.
  2. What is the maximum DC collector current of the BC850CLT1?
    The maximum DC collector current is 100 mA.
  3. What is the collector-emitter breakdown voltage (VCEO) of the BC850CLT1?
    The collector-emitter breakdown voltage (VCEO) is 45 V.
  4. What is the package type of the BC850CLT1?
    The package type is SOT-23-3 (TO-236).
  5. What is the bandwidth product (fT) of the BC850CLT1?
    The bandwidth product (fT) is 100 MHz.
  6. What are the typical applications of the BC850CLT1?
    The BC850CLT1 is used in low to medium power amplification, switching circuits, and general-purpose electronics.
  7. What is the power dissipation (Pd) of the BC850CLT1?
    The power dissipation (Pd) is 225 mW.
  8. What is the range of current gain (hFE) for the BC850CLT1?
    The current gain (hFE) ranges from 110 to 420.
  9. Is the BC850CLT1 suitable for high-frequency applications?
    Yes, it is suitable for high-frequency applications due to its 100 MHz bandwidth product.
  10. What are the benefits of the low saturation voltages of the BC850CLT1?
    The low saturation voltages reduce power consumption in switching circuits.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:225 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
BC850CLT1
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TRANS NPN 45V 0.1A SOT23-3
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BC849CLT1
BC849CLT1
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BC850BLT1
BC850BLT1
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Similar Products

Part Number BC850CLT1 BC850CLT1G BC850BLT1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 225 mW 225 mW 225 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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