BC847CLT1
  • Share:

onsemi BC847CLT1

Manufacturer No:
BC847CLT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS NPN 45V 100MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CLT1 is a small-signal NPN epitaxial silicon transistor manufactured by onsemi. This transistor is part of the BC846/BC847/BC848/BC850 series, known for their high current gain and low noise figure, making them suitable for a wide range of applications in electronic circuits.

These transistors are designed to operate within a broad temperature range and are characterized by their high reliability and stability. They are often used in general-purpose amplifier and switching applications.

Key Specifications

Parameter Symbol Min Typ Max Unit
Collector-Base Voltage VCBO - - 50 V
Collector-Emitter Voltage VCEO - - 45 V
Emitter-Base Voltage VEBO - - 6 V
Collector Current (DC) IC - - 100 mA
Junction Temperature TJ - - 150 °C
Storage Temperature Range TSTG -65 - 150 °C
Power Dissipation PD - - 310 mW
Thermal Resistance, Junction-to-Ambient RθJA - - 403 °C/W
DC Current Gain hFE 110 420 800 -
Collector-Emitter Saturation Voltage VCE(sat) 90 250 600 mV
Base-Emitter Saturation Voltage VBE(sat) 700 900 - mV
Base-Emitter On Voltage VBE(on) 580 660 700 mV
Current Gain Bandwidth Product fT - - 300 MHz

Key Features

  • High Current Gain: The BC847CLT1 offers a high DC current gain (hFE) ranging from 110 to 800, making it suitable for amplifier applications.
  • Low Noise Figure: It has a low noise figure, which is essential for applications requiring minimal noise interference.
  • Broad Temperature Range: The transistor can operate over a wide temperature range from -65°C to 150°C, enhancing its reliability in various environmental conditions.
  • High Collector-Emitter Voltage: With a collector-emitter voltage (VCEO) of up to 45V, it can handle moderate voltage levels in circuit designs.
  • Low Power Dissipation: The transistor has a power dissipation of 310 mW, which is suitable for low to moderate power applications.

Applications

  • General-Purpose Amplifiers: The BC847CLT1 is widely used in general-purpose amplifier circuits due to its high current gain and low noise characteristics.
  • Switching Circuits: It is also used in switching applications where high reliability and stability are required.
  • Audio Circuits: The transistor's low noise figure makes it suitable for use in audio circuits where signal integrity is crucial.
  • Automotive and Industrial Electronics: Its ability to operate over a broad temperature range makes it a good choice for automotive and industrial electronic applications.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC847CLT1?

    The maximum collector-emitter voltage (VCEO) of the BC847CLT1 is 45V.

  2. What is the typical DC current gain (hFE) of the BC847CLT1?

    The typical DC current gain (hFE) of the BC847CLT1 ranges from 110 to 800.

  3. What is the maximum collector current (IC) of the BC847CLT1?

    The maximum collector current (IC) of the BC847CLT1 is 100 mA.

  4. What is the operating temperature range of the BC847CLT1?

    The BC847CLT1 can operate over a temperature range from -65°C to 150°C.

  5. What is the power dissipation of the BC847CLT1?

    The power dissipation of the BC847CLT1 is 310 mW.

  6. What is the thermal resistance, junction-to-ambient (RθJA) of the BC847CLT1?

    The thermal resistance, junction-to-ambient (RθJA) of the BC847CLT1 is 403 °C/W).

  7. What are some common applications of the BC847CLT1?

    The BC847CLT1 is commonly used in general-purpose amplifier circuits, switching circuits, audio circuits, and in automotive and industrial electronics).

  8. What is the base-emitter on voltage (VBE(on)) of the BC847CLT1?

    The base-emitter on voltage (VBE(on)) of the BC847CLT1 ranges from 580 to 700 mV).

  9. What is the current gain bandwidth product (fT) of the BC847CLT1?

    The current gain bandwidth product (fT) of the BC847CLT1 is up to 300 MHz).

  10. What is the noise figure of the BC847CLT1?

    The noise figure of the BC847CLT1 is typically between 2.0 and 10.0 dB).

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

$0.04
4,156

Please send RFQ , we will respond immediately.

Same Series
BC847BLT3G
BC847BLT3G
TRANS NPN 45V 0.1A SOT23-3
BC850CLT1G
BC850CLT1G
TRANS NPN 45V 0.1A SOT23-3
BC846BLT1G
BC846BLT1G
TRANS NPN 65V 0.1A SOT23-3
SBC847CLT1G
SBC847CLT1G
TRANS NPN 45V 0.1A SOT23-3
NSVBC850BLT1G
NSVBC850BLT1G
TRANS NPN 45V 0.1A SOT23-3
BC848BLT3G
BC848BLT3G
TRANS NPN 30V 0.1A SOT23-3
BC849CLT1G
BC849CLT1G
TRANS NPN 30V 0.1A SOT23-3
BC846ALT1G
BC846ALT1G
TRANS NPN 65V 0.1A SOT23-3
NSVBC850CLT1G
NSVBC850CLT1G
TRANS NPN 45V 0.1A SOT23-3
BC847ALT1
BC847ALT1
TRANS NPN 45V 100MA SOT23
BC847CLT1
BC847CLT1
TRANS NPN 45V 100MA SOT23
BC848BLT1
BC848BLT1
TRANS NPN 30V 100MA SOT23

Similar Products

Part Number BC847CLT1 BC847CLT1G BC847CTT1 BC847CWT1 BC847BLT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete
Transistor Type - NPN NPN NPN NPN
Current - Collector (Ic) (Max) - 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) - 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic - 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) - 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max - 300 mW 225 mW 150 mW 300 mW
Frequency - Transition - 100MHz 100MHz 100MHz 100MHz
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package - SOT-23-3 (TO-236) SC-75, SOT-416 SC-70-3 (SOT323) SOT-23-3 (TO-236)

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
BC817-16LT1G
BC817-16LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BD13610S
BD13610S
Fairchild Semiconductor
TRANS PNP 45V 1.5A TO126-3
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BC848BWT1G
BC848BWT1G
onsemi
TRANS NPN 30V 0.1A SC70-3
BC846BLT3G
BC846BLT3G
onsemi
TRANS NPN 65V 0.1A SOT23-3
MMBT5087LT1G
MMBT5087LT1G
onsemi
TRANS PNP 50V 0.05A SOT23-3
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC327-40ZL1G
BC327-40ZL1G
onsemi
TRANS PNP 45V 0.8A TO92
BC857B/DG/B3,215
BC857B/DG/B3,215
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP