BC847CLT1
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onsemi BC847CLT1

Manufacturer No:
BC847CLT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS NPN 45V 100MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CLT1 is a small-signal NPN epitaxial silicon transistor manufactured by onsemi. This transistor is part of the BC846/BC847/BC848/BC850 series, known for their high current gain and low noise figure, making them suitable for a wide range of applications in electronic circuits.

These transistors are designed to operate within a broad temperature range and are characterized by their high reliability and stability. They are often used in general-purpose amplifier and switching applications.

Key Specifications

Parameter Symbol Min Typ Max Unit
Collector-Base Voltage VCBO - - 50 V
Collector-Emitter Voltage VCEO - - 45 V
Emitter-Base Voltage VEBO - - 6 V
Collector Current (DC) IC - - 100 mA
Junction Temperature TJ - - 150 °C
Storage Temperature Range TSTG -65 - 150 °C
Power Dissipation PD - - 310 mW
Thermal Resistance, Junction-to-Ambient RθJA - - 403 °C/W
DC Current Gain hFE 110 420 800 -
Collector-Emitter Saturation Voltage VCE(sat) 90 250 600 mV
Base-Emitter Saturation Voltage VBE(sat) 700 900 - mV
Base-Emitter On Voltage VBE(on) 580 660 700 mV
Current Gain Bandwidth Product fT - - 300 MHz

Key Features

  • High Current Gain: The BC847CLT1 offers a high DC current gain (hFE) ranging from 110 to 800, making it suitable for amplifier applications.
  • Low Noise Figure: It has a low noise figure, which is essential for applications requiring minimal noise interference.
  • Broad Temperature Range: The transistor can operate over a wide temperature range from -65°C to 150°C, enhancing its reliability in various environmental conditions.
  • High Collector-Emitter Voltage: With a collector-emitter voltage (VCEO) of up to 45V, it can handle moderate voltage levels in circuit designs.
  • Low Power Dissipation: The transistor has a power dissipation of 310 mW, which is suitable for low to moderate power applications.

Applications

  • General-Purpose Amplifiers: The BC847CLT1 is widely used in general-purpose amplifier circuits due to its high current gain and low noise characteristics.
  • Switching Circuits: It is also used in switching applications where high reliability and stability are required.
  • Audio Circuits: The transistor's low noise figure makes it suitable for use in audio circuits where signal integrity is crucial.
  • Automotive and Industrial Electronics: Its ability to operate over a broad temperature range makes it a good choice for automotive and industrial electronic applications.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC847CLT1?

    The maximum collector-emitter voltage (VCEO) of the BC847CLT1 is 45V.

  2. What is the typical DC current gain (hFE) of the BC847CLT1?

    The typical DC current gain (hFE) of the BC847CLT1 ranges from 110 to 800.

  3. What is the maximum collector current (IC) of the BC847CLT1?

    The maximum collector current (IC) of the BC847CLT1 is 100 mA.

  4. What is the operating temperature range of the BC847CLT1?

    The BC847CLT1 can operate over a temperature range from -65°C to 150°C.

  5. What is the power dissipation of the BC847CLT1?

    The power dissipation of the BC847CLT1 is 310 mW.

  6. What is the thermal resistance, junction-to-ambient (RθJA) of the BC847CLT1?

    The thermal resistance, junction-to-ambient (RθJA) of the BC847CLT1 is 403 °C/W).

  7. What are some common applications of the BC847CLT1?

    The BC847CLT1 is commonly used in general-purpose amplifier circuits, switching circuits, audio circuits, and in automotive and industrial electronics).

  8. What is the base-emitter on voltage (VBE(on)) of the BC847CLT1?

    The base-emitter on voltage (VBE(on)) of the BC847CLT1 ranges from 580 to 700 mV).

  9. What is the current gain bandwidth product (fT) of the BC847CLT1?

    The current gain bandwidth product (fT) of the BC847CLT1 is up to 300 MHz).

  10. What is the noise figure of the BC847CLT1?

    The noise figure of the BC847CLT1 is typically between 2.0 and 10.0 dB).

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC847CLT1 BC847CLT1G BC847CTT1 BC847CWT1 BC847BLT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete
Transistor Type - NPN NPN NPN NPN
Current - Collector (Ic) (Max) - 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) - 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic - 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) - 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max - 300 mW 225 mW 150 mW 300 mW
Frequency - Transition - 100MHz 100MHz 100MHz 100MHz
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package - SOT-23-3 (TO-236) SC-75, SOT-416 SC-70-3 (SOT323) SOT-23-3 (TO-236)

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