BC848BLT1G
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onsemi BC848BLT1G

Manufacturer No:
BC848BLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC848BLT1G is a general-purpose NPN bipolar transistor manufactured by onsemi. It is designed for use in both linear and switching applications. The transistor is housed in the SOT-23 package, which is suitable for lower power surface mount applications. This transistor is known for its high current gain, low collector-emitter saturation voltage, and robust ESD protection, making it versatile for various electronic circuits.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Collector-Base Breakdown VoltageV(BR)CBO30-80V
Collector-Emitter Breakdown VoltageV(BR)CEO30-65V
Emitter-Base Breakdown VoltageV(BR)EBO5.06.06.0V
Collector Cutoff CurrentICBO--15 nAA
DC Current GainhFE200-450-
Collector-Emitter Saturation VoltageVCE(sat)--0.25V
Base-Emitter Saturation VoltageVBE(sat)--0.7V
Current-Gain Bandwidth ProductfT100--MHz
Output CapacitanceCobo--4.5 pF-
Maximum Continuous Collector CurrentIC--100 mAA
Maximum Power DissipationP_TM--300 mWW

Key Features

  • High current gain (hFE) ranging from 200 to 450.
  • Low collector-emitter saturation voltage (VCE(sat)) of 0.25 V.
  • Robust ESD protection with Human Body Model (HBM) rating >4000 V and Machine Model (MM) rating >400 V.
  • Pb-free packages available, making it environmentally friendly.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
  • Moisture Sensitivity Level (MSL) of 1, indicating high reliability in various environmental conditions.

Applications

The BC848BLT1G transistor is versatile and can be used in a variety of applications, including:

  • Linear amplifiers and switching circuits.
  • Data line protection and inductive load protection.
  • Steering logic and polarity reversal protection.
  • Automotive and industrial control systems due to its AEC-Q101 qualification and PPAP capability.

Q & A

  1. What is the package type of the BC848BLT1G transistor?
    The BC848BLT1G transistor is housed in the SOT-23 (TO-236) package.
  2. What is the maximum continuous collector current of the BC848BLT1G?
    The maximum continuous collector current is 100 mA.
  3. What is the collector-emitter saturation voltage (VCE(sat)) of the BC848BLT1G?
    The collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
  4. Does the BC848BLT1G have ESD protection?
    Yes, it has robust ESD protection with HBM rating >4000 V and MM rating >400 V.
  5. Is the BC848BLT1G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  6. What is the moisture sensitivity level (MSL) of the BC848BLT1G?
    The moisture sensitivity level (MSL) is 1.
  7. What is the maximum power dissipation of the BC848BLT1G?
    The maximum power dissipation is 300 mW.
  8. What is the current-gain bandwidth product (fT) of the BC848BLT1G?
    The current-gain bandwidth product (fT) is 100 MHz.
  9. Is the BC848BLT1G Pb-free?
    Yes, Pb-free packages are available.
  10. What are some common applications of the BC848BLT1G transistor?
    It is used in linear amplifiers, switching circuits, data line protection, inductive load protection, and steering logic among others).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC848BLT1G BC849BLT1G BC848BWT1G BC848BLT3G BC848CLT1G BC848ALT1G BC848BLT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Obsolete
Transistor Type NPN NPN NPN NPN NPN NPN -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V 30 V 30 V -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V 110 @ 2mA, 5V -
Power - Max 300 mW 300 mW 150 mW 300 mW 300 mW 300 mW -
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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